公开(公告)号：EP2290135A1

公开(公告)日：2011-03-02

申请号：EP10011036.0

申请日：2001-06-27

申请人： Cree, Inc.

发明人： Flynn, Jeffrey, S. ,  Brandes, George, R. ,  Vaudo, Robert, P. ,  Keogh, David, M. ,  Xu, Xueping ,  Landini, Barbara, E.

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

摘要： A method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, comprising depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under deposition conditions including V/III ratio in a range of from about 1 to about 10 5 , nitrogen source material partial pressure in a range of from about 1 to about 10 3 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 micron per hour to about 500 microns per hour.

摘要翻译： 形成在相应的III-V族氮化物材料基板由III-V族氮化物同质外延层，包括通过使用III族源材料和氮源材料沉积条件，包括V / III下一个VPE工艺沉积在III-V族氮化物同质外延层的方法 比的范围为约1至约10 5，氮原料分压的范围为约1至约10 3托，在范围为约500至约1250摄氏度的生长温度和生长速率在 的范围内每小时约0.1微米至每小时约500微米。

公开(公告)号：EP2284297B1

公开(公告)日：2012-08-22

申请号：EP10011760.5

申请日：2001-06-27

申请人： Cree, Inc.

发明人： Flynn, Jeffrey, S. ,  Brandes, Georges, R. ,  Vaudo, Robert, P. ,  Keogh, David, M. ,  Xu, Hueping ,  Landini, Barbara E.

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

公开(公告)号：EP1299900B1

公开(公告)日：2012-12-12

申请号：EP01946718.2

申请日：2001-06-27

申请人： CREE, INC.

发明人： FLYNN, Jeffrey, S. ,  BRANDES, George, R. ,  VAUDO, Robert, P. ,  KEOGH, David, M. ,  XU, Xueping ,  LANDINI, Barbara, E.

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

公开(公告)号：EP0175436A3

公开(公告)日：1988-09-28

申请号：EP85303006

申请日：1985-04-29

申请人： STC PLC

发明人： Greene, Peter David ,  Renner, Daniel S.O. c/o Marijo Jones

IPC分类号： H01L21/205 ,  H01L33/00 ,  C30B25/22

CPC分类号： C23C16/4488 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02546 ,  H01S5/2095 ,  H01S5/227 ,  H01S5/2275 ,  Y10S148/065 ,  Y10S148/119

摘要： A mass transport process for use in the manufacture of semiconductor devices, particularly but not exclusively low threshold semiconductor lasers in the InP/InGaAsP system, involves the arrangement of a cover wafer (18) of the material to be grown adjacent to a semiconductor wafer (15) on which the material is to be grown, their disposition together with a crystalline alkali halide (20) in a crucible (16), and heating the crucible, which is almost but not completely sealed, in a hydrogen stream. For the manufacture of InP/InGaAsP lasers and the growth of InP, the alkali halide may comprise KI, Rbl or Csl and a controlled amount of In metal (21) may be optionally contained in the crucible (16) to control the balance between growth of InP for defining the laser active region and erosion of InP from other areas of the wafer. Growth is achieved at temperatures comparable with liquid phase epitaxy processing temperatures.

公开(公告)号：EP2290136A1

公开(公告)日：2011-03-02

申请号：EP10011037.8

申请日：2001-06-27

申请人： Cree, Inc.

发明人： Flynn, Jeffrey, S. ,  Brandes, George, R. ,  Vaudo, Robert, P. ,  Keogh, David, M. ,  Xu, Xueping ,  Landini, Barbara, E.

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

摘要： A method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, comprising depositing the III-V nitride homoepitaxial layer by a vapor phase epitaxy process using Group III source material and nitrogen source material, said method further comprising one of the following: (i) coating a susceptor surface with a corresponding III-V nitride material prior to reposing the substrate thereon for said depositing step; (ii) annealing the substrate in an ambient prior to said depositing step at a temperature > 600 degrees Celsius to relieve strain in the layer, with the ambient of the anneal being different from ambient of said depositing step to protect the substrate surface and promote substrate strain relaxation; (iii) subjecting the substrate to a mass transport smoothing of a growth surface of said substrate; and (iv) conditioning the substrate by oxidation in O 2 , air, an air/inert gas mixture, or a wet mixture to create a thin oxide layer, and stripping the oxide layer in an alkali solution or etch removing same, to remove potential impurities from the substrate.

摘要翻译： 形成在相应的III-V族氮化物材料基板由III-V族氮化物同质外延层，包括通过使用III族源材料和氮的源材料的气相外延工艺沉积在III-V族氮化物同质外延层的方法，所述方法还包括 以下的一个：（i）在其上寄托衬底用于沉积所述步骤之前，涂覆与相应的III-V族氮化物材料的基座表面; （ii）在室温之前在所述退火在基板在摄氏的温度> 600度淀积步骤在层以缓解应变，与退火从所述周围沉积步骤，以保护基片表面，并促进基底是不同的环境 应变松弛; （III）使所述基材与所述基材的生长表面的质量传递平滑; 和（iv）调节除去同一衬底通过氧化在O 2，空气，空气/惰性气体混合物，或湿混合物以产生一个薄的氧化物层，并在碱溶液中汽提所述氧化物层或蚀刻，以去除潜在 从基片的杂质。

公开(公告)号：EP0175436B1

公开(公告)日：1992-02-05

申请号：EP85303006.2

申请日：1985-04-29

申请人： NORTHERN TELECOM LIMITED

发明人： Greene, Peter David ,  Renner, Daniel S.O. c/o Marijo Jones

IPC分类号： H01L21/205 ,  H01L33/00 ,  C30B25/22

CPC分类号： C23C16/4488 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02546 ,  H01S5/2095 ,  H01S5/227 ,  H01S5/2275 ,  Y10S148/065 ,  Y10S148/119

公开(公告)号：EP2290135B1

公开(公告)日：2013-07-24

申请号：EP10011036.0

申请日：2001-06-27

申请人： Cree, Inc.

发明人： Flynn, Jeffrey, S. ,  Brandes, George, R. ,  Vaudo, Robert, P. ,  Keogh, David, M. ,  Xu, Xueping ,  Landini, Barbara, E.

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

公开(公告)号：EP2290136B1

公开(公告)日：2013-05-08

申请号：EP10011037.8

申请日：2001-06-27

申请人： Cree, Inc.

发明人： Flynn, Jeffrey, S. ,  Brandes, George, R. ,  Vaudo, Robert, P. ,  Keogh, David, M. ,  Xu, Xueping ,  Landini, Barbara, E.

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

公开(公告)号：EP2284297A1

公开(公告)日：2011-02-16

申请号：EP10011760.5

申请日：2001-06-27

申请人： Cree, Inc.

发明人： Flynn, Jeffrey, S. ,  Brandes, Georges, R. ,  Vaudo, Robert, P. ,  Keogh, David, M. ,  Xu, Hueping ,  Landini, Barbara E.

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

摘要： A homoepitaxial III-V nitride article, comprising a III-V nitride homoepitaxial layer deposited on a free-standing III-V nitride material substrate, wherein said III-V nitride homoepitaxial layer has a dislocation density of less than 1E6 dislocations per square centimeter, and the article comprises one of the following features: (i) oxidized material is provided between the III-V nitride homoepitaxial layer and the free-standing III-V nitride material substrate; (ii) an epi interlayer is provided between the III-V nitride homoepitaxial layer and the free-standing III-V nitride material substrate; and (iii) the free-standing III-V nitride material substrate is offcut, and the III-V nitride homoepitaxial layer comprises non-(0001) homoepitaxial step flow crystal growth.

摘要翻译： 甲同质外延III-V族氮化物制品，包括沉积在自立式III-V族氮化物材料基板由III-V族氮化物同质外延层，worin上述III-V族氮化同质外延层具有小于每平方厘米1E6位错的位错密度， 和所述制品包括以下特征中的一个：（i）氧化的材料是III-V族氮化物同质外延层与所述自由站立的III-V族氮化物材料基板之间设置; （ii）向外延层间在III-V族氮化物同质外延层和自支撑III-V族氮化物材料基板之间; 和（iii）的自支撑III-V族氮化物材料的基材是边角料，并且III-V族氮化物同质外延层包括非（0001）同质外延台阶流动的晶体生长。

公开(公告)号：EP1299900A4

公开(公告)日：2007-09-26

申请号：EP01946718

申请日：2001-06-27

申请人： CREE INC

发明人： FLYNN JEFFREY S ,  BRANDES GEORGE R ,  VAUDO ROBERT P ,  KEOGH DAVID M ,  XU XUEPING ,  LANDINI BARBARA E

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B23/00 ,  C30B25/00 ,  C30B25/02 ,  C30B25/18 ,  C30B33/00 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/32 ,  C30B23/02 ,  C23C14/06 ,  C23C14/24 ,  C23C16/30 ,  C30B23/04 ,  C30B28/12 ,  C30B28/14 ,  C30B29/58

CPC分类号： C30B25/02 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02658 ,  H01L33/32 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2095 ,  H01S5/32341

摘要： A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.