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    In-situ crystalline material screening apparatus and method
    5.
    发明公开
    In-situ crystalline material screening apparatus and method 有权
    Vorrichtung und Verfahren zum现场筛选von kristallinem材料

    公开(公告)号：EP1798544A1

    公开(公告)日：2007-06-20

    申请号：EP06125816.6

    申请日：2006-12-11

    申请人： Oxford Diffraction Limited

    发明人： Kucharczyk, Damian ,  Cooper, Richard ,  Loeffen, Paul William

    IPC分类号： G01N23/207

    CPC分类号： G01N23/207 ,  C30B7/00 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1012

    摘要： There is provided a method and apparatus for assessing in-situ crystal formation in a test sample. Both optical imaging and X-ray diffraction techniques are utilized, with the results of these processes being combined in such a way as to produce an overall score relating to the aptness of crystalline material for harvesting and subsequent X-ray crystallography.

    摘要翻译： 提供了一种用于评估测试样品中原位晶体形成的方法和装置。 利用光学成像和X射线衍射技术，将这些方法的结果组合起来，以产生与用于收获和随后的X射线晶体学的结晶材料适合性相关的整体得分。

    Einrichtung und Verfahren für die Bestimmung von Durchmessern eines Kristalls
    6.
    发明公开
    Einrichtung und Verfahren für die Bestimmung von Durchmessern eines Kristalls 审中-公开
    Einrichtung und Verfahrenfürdie Bestimmung von Durchmessern eines Kristalls

    公开(公告)号：EP0903428A2

    公开(公告)日：1999-03-24

    申请号：EP98114783.8

    申请日：1998-08-06

    申请人： Leybold Systems GmbH

    发明人： Altekrüger, Burkhard, Dr. Dipl.-Phys. ,  Aufreiter, Joachim, Ing. ,  Brüss, Dieter, Dipl.-Ing. ,  Kalkowski, Klaus, Dipl.-Ing.

    IPC分类号： C30B15/26 ,  C30B29/06

    CPC分类号： C30B15/26 ,  G01B11/08 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

    摘要： Die Erfindung betrifft eine Einrichtung und ein Verfahren für die Bestimmung von Durchmessern eines Kristalls, der aus einer Schmelze gezogen wird. Es sind hierbei mehrere Videokameras vorgesehen, von denen jede einen eigenen Abschnitt entlang der vertikalen Achse des Kristalls oder in eine Richtung senkrecht hierzu abbildet. Die Bildwinkel der Kameras sind so ausgelegt, daß der abzubildende Gegenstand die gesamte Bildebene - wenigstens in einer Richtung - vollständig ausfüllt. Für Gegenstände mit kleinem Durchmesser - z. B. den Kristallhals - wird eine Kamera mit kleinem Bildwinkel verwendet, während für Gegenstände mit großem Durchmesser - z. B. den Kristall-Body - eine Kamera mit großem Bildwinkel verwendet wird.

    摘要翻译： 本发明涉及一种用于监测用于生产晶体的熔体的装置。 因此，该装置包括相机，该相机为坩埚内容物的表面的至少部分提供图像。 相对于所述坩埚的内容物的表面的固体和液体部分，通过评价装置评价照相机图像。

    VAPOR PHASE EPITAXIAL APPARATUS AND VAPOR PHASE EPITAXIAL METHOD
    8.
    发明公开
    VAPOR PHASE EPITAXIAL APPARATUS AND VAPOR PHASE EPITAXIAL METHOD 有权
    DAMPFPHASENEPITAXIALVORRICHTUNG UND DAMPFPHASENEPITAXIALVERFAHREN

    公开(公告)号：EP1533834A4

    公开(公告)日：2007-01-17

    申请号：EP02807525

    申请日：2002-10-16

    申请人： NIPPON MINING CO

    发明人： SHIMIZU EIICHI ,  MAKINO NOBUHITO

    IPC分类号： H01L21/205 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12

    CPC分类号： C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012 ,  Y10T117/1016

    摘要： A vapor phase epitaxial apparatus comprises a sealable reaction furnace, a wafer accommodation body which is installed in the reaction furnace to dispose a wafer at a predetermined position, a gas feeding means for feeding raw gas toward the wafer, and a heating means for heating the wafer. An epitaxial film is formed on a surface of the wafer by feeding the raw gas into the reaction furnace in a high-temperature state while heating the wafer via the wafer accommodation body by the heating means in the reaction furnace. The wafer accommodation body comprises a heat flow control unit having a cavity formed for accommodating the wafer, and a heat flow transmission unit which is joined to the heat flow control unit to transfer the heat to the wafer accommodated in the cavity. The contact thermal resistance of the heat flow control unit with the heat flow transfer unit is set to be not lower than 1.0 x 10 m K/W and not greater than 5.0 x 10 m K/W, and the heat flow control unit is formed of a material having the thermal conductivity of not smaller than 0.5 times and not greater than 5 times of the thermal conductivity of the wafer disposed on the heat flow transfer unit.

    摘要翻译： 一种气相外延装置包括：可密封的反应炉;晶片容纳体，其安装在反应炉中以将晶片置于预定位置;气体供给装置，用于将原料气体供给至晶片;以及加热装置， 晶圆。 通过反应炉中的加热装置，通过晶片容纳体加热晶片，同时将原料气体供入高温状态的反应炉中，从而在晶片的表面上形成外延膜。 晶片容纳体包括具有形成用于容纳晶片的空腔的热流控制单元以及与热流控制单元接合以将热量传递到容纳在空腔中的晶片的热流传输单元。 热流控制单元与热流转移单元的接触热阻被设定为不小于1.0×10 -6 m 2 K / W且不大于5.0×10 -3 m 2 / 2> K / W，并且所述热流控制单元由热导率不小于设置在热流转移单元上的晶片的导热率的0.5倍且不大于5倍的材料形成。

    PROTEIN CRYSTALLOGRAPHY HANGING DROP MULTIWELL PLATE
    9.
    发明公开
    PROTEIN CRYSTALLOGRAPHY HANGING DROP MULTIWELL PLATE 审中-公开
    用于容纳多种孔板滴剂蛋白质结晶

    公开(公告)号：EP1579039A2

    公开(公告)日：2005-09-28

    申请号：EP03815775.6

    申请日：2003-12-12

    申请人： Corning Incorporated

    发明人： SHA, Ma

    IPC分类号： C30B7/00 ,  C30B29/58 ,  B01L3/00

    CPC分类号： C30B7/00 ,  C30B29/58 ,  Y10T117/1012

    摘要： The present invention includes a microplate for performing crystallography studies. In particular, the microplate has a frame that includes a plurality of wells formed therein. Each well includes a first well and a second well. The first well includes a relatively large reservoir capable of receiving a reagent solution. The second well includes a relatively small reservoir having a substantially concaved form capable of receiving a protein solution and a reagent solution. The second well is suspended above the first well such that space on the plate is conserved and to enable protein crystal growth utilizing a hanging drop vapor diffusion crystallization process.

    Apparatus for growing crystals under conditions of limited accessibility
    10.
    发明公开
    Apparatus for growing crystals under conditions of limited accessibility 失效
    Vorrichtung zurZüchtungvon Kristallen unterzugangsbeschränktenBedingungen。

    公开(公告)号：EP0482946A1

    公开(公告)日：1992-04-29

    申请号：EP91309888.5

    申请日：1991-10-25

    申请人： FUJITSU LIMITED

    发明人： Shiraishi, Atsushi, c/o Fujitsu Limited ,  Asano, Koji, c/o Fujitsu Limited ,  Gotoh, Makoto, c/o Fujitsu Limited ,  Oka, Kotaro, c/o Fujitsu Limited

    IPC分类号： C30B7/00 ,  C30B29/58 ,  C30B30/08

    CPC分类号： C30B30/08 ,  C30B7/00 ,  C30B29/58 ,  Y10S117/901 ,  Y10T117/1004 ,  Y10T117/1012

    摘要： A material processing apparatus comprises a plurality of syringes (1) provided detachable on a base member (26) and containing fluids (2, 3) that are used for processing a material, a processing chamber (4) provided detachable on the base member for causing the material processing, an actuation mechanism (31 - 33) for actuating the plurality of syringes to supply the fluids in the syringes to the processing chamber; and an interconnection fixture (50) for connecting the plurality of syringes to the processing chamber for transporting the fluids in the plurality of syringes to the processing chamber, wherein the plurality of syringes are provided detachable with respect to the interconnection fixture, and wherein the processing chamber is provided detachable with respect to the interconnection fixture.

    摘要翻译： 一种材料处理设备包括多个注射器（1），其可拆卸地安装在基底部件（26）上并且包含用于处理材料的流体（2,3）;处理室（4），其可拆卸地设置在基座部件上 引起所述材料处理，致动机构（31-33）用于致动所述多个注射器以将所述注射器中的流体供应到所述处理室; 以及用于将所述多个注射器连接到所述处理室以将所述多个注射器中的流体输送到所述处理室的互连夹具（50），其中所述多个注射器相对于所述互连夹具可拆卸地设置，并且其中所述处理 腔室相对于互连夹具可拆卸地设置。