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1.
公开(公告)号:EP4441264A1
公开(公告)日:2024-10-09
申请号:EP22902226.4
申请日:2022-12-02
发明人: FUNKE, Kelly, S. , JOHN, Kon
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公开(公告)号:EP3471517B1
公开(公告)日:2024-08-21
申请号:EP17810380.0
申请日:2017-06-08
IPC分类号: H05K1/03 , B23K35/30 , C04B37/02 , C22C5/06 , H01L23/12 , H05K1/02 , H05K3/38 , B23K35/00 , B23K35/02 , B23K35/26 , B23K35/28 , B23K35/32 , B32B15/01 , C22C5/08 , C22C9/00 , H01L23/15 , H01L23/36 , H01L23/498 , H05K3/00
CPC分类号: B23K35/30 , H05K1/0271 , H05K1/0306 , H05K3/0061 , H05K3/388 , H01L23/15 , H01L23/36 , H01L23/498 , B23K35/007 , B23K35/0238 , B32B15/018 , C22C5/08 , C04B37/026 , C04B2237/12620130101 , C04B2237/12720130101 , C04B2237/34320130101 , C04B2237/34820130101 , C04B2237/3620130101 , C04B2237/36120130101 , C04B2237/36320130101 , C04B2237/36520130101 , C04B2237/36620130101 , C04B2237/5020130101 , B23K35/26 , B23K35/286 , B23K35/32 , B23K35/325 , C22C9/00 , B23K35/3006 , C04B2237/12520130101 , C04B2237/36820130101 , C04B2237/40720130101 , C04B2237/5220130101 , C04B2237/6020130101 , C04B2237/70820130101 , C04B2237/7420130101
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公开(公告)号:EP4359152A1
公开(公告)日:2024-05-01
申请号:EP22734584.0
申请日:2022-06-17
申请人: AB Sandvik Coromant
发明人: DAHL, Leif , ULITZKA, Tim
IPC分类号: B22F7/06 , B22F5/00 , B23K1/00 , B23K1/008 , B23K35/00 , B23K35/02 , B23K35/30 , C22C5/06 , C22C5/08 , C22C38/06 , C22C38/10 , C22C38/12 , C22C38/14 , C22C38/44 , C22C38/50 , C22C38/52
CPC分类号: B23K35/3006 , B23K35/0233 , B23K35/025 , B23K1/0008 , B23K1/008 , B22F2005/00120130101 , B23K35/004 , B22F7/06 , C22C38/105 , C22C38/12 , C22C38/14 , C22C38/44 , C22C38/50 , C22C38/52 , C22C38/06 , C22C5/06 , C22C5/08 , B23K1/19 , B23K31/025 , B23K2101/2020180801 , B23K2103/0420180801 , B23K2103/1620180801 , B23K2103/1820180801
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公开(公告)号:EP4308337A1
公开(公告)日:2024-01-24
申请号:EP22715981.1
申请日:2022-03-15
发明人: KOMMER, Martin , BAUMANN, Wolfgang
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公开(公告)号:EP4234734A1
公开(公告)日:2023-08-30
申请号:EP21882506.5
申请日:2021-09-24
摘要: There is provided a novel Ag alloy bonding wire for semiconductor devices which provides an excellent bonded ball shape during ball bonding, which is required for high-density packaging. The Ag alloy bonding wire for semiconductor devices is made of an Ag alloy that contains one or more elements selected from the group consisting of Te, Bi and Sb and that satisfies at least one of the following conditions (1) to (3):
(1) a concentration of Te is 5 to 500 at. ppm;
(2) a concentration of Bi is 5 to 500 at. ppm; and
(3) a concentration of Sb is 5 to 1,500 at. ppm.-
公开(公告)号:EP3870548B1
公开(公告)日:2023-06-14
申请号:EP19794471.3
申请日:2019-10-22
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公开(公告)号:EP3850666B1
公开(公告)日:2023-05-24
申请号:EP19911360.6
申请日:2019-01-22
发明人: CHEN, Peng , ZHOU, Houde , ZHANG, Baohua , GU, Chao
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公开(公告)号:EP3892752A1
公开(公告)日:2021-10-13
申请号:EP19892905.1
申请日:2019-12-05
发明人: TOSHIMORI Yuto , NONAKA Sohei , KOMIYAMA Shozo , HAYASHI Yujiro
IPC分类号: C23C14/14 , C22C5/06 , C23C14/34 , G02F1/1335 , G02F1/1343 , C22F1/00 , C22F1/14
摘要: A metal film includes, Cu in a range of 0.10 atom% or more and 5.00 atom% or less, wherein a Pd content is 40 mass ppm or less, a Pt content is 20 mass ppm or less, a Au content is 20 mass ppm or less, a Rh content is 10 mass ppm or less, a total amount of Pd, Pt, Au, and Rh is 50 mass ppm or less, and a balance consists of Ag and inevitable impurities.
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公开(公告)号:EP3889280A1
公开(公告)日:2021-10-06
申请号:EP19889277.0
申请日:2019-11-25
发明人: TSURUTA Terumasa
摘要: The present invention provides an electrically-conductive material containing Ag in an amount of 10 mass% or more and 70 mass% or less, Pd in an amount of 30 mass% or more and 90 mass% or less, Ni in an amount of more than 5 mass% and 45 mass% or less, and inevitable impurities. A ratio of a Ni content (mass%) to a Ag content (mass%) (Ni (mass%)/Ag (mass%)) is 0.1 or more and 5.0 or less, metal structures include a AgPd alloy phase and a PdNi alloy phase, and a volume ratio of the PdNi alloy phase is 18 vol% or more and 80 vol% or less. In the present invention, Ni is added in a high concentration to a AgPd alloy, and the amount of PdNi alloy phases generated as separate phases is controlled to strengthen the entire alloy. The alloy has good processability, and an improved rigidity modulus and recrystallization property as compared to conventional alloys.
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