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    Dispositif magnétique à couplage d'echange
    92.
    发明公开
    Dispositif magnétique à couplage d'echange 有权
    Magnetvorrichtung mit Wechselschaltung

    公开(公告)号：EP2533244A1

    公开(公告)日：2012-12-12

    申请号：EP12170677.4

    申请日：2012-06-04

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Moritz, Jérôme ,  Dieny, Bernard

    IPC分类号： G11C11/16

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    摘要： L'invention concerne un dispositif magnétique (24, 240) comportant une couche magnétique (5), dite couche libre, présentant une direction d'aimantation variable et une première couche antiferromagnétique (6) au contact de ladite couche libre (5), ladite première couche antiferromagnétique (6) étant apte à piéger la direction d'aimantation de ladite couche libre (5). Le dispositif magnétique (24, 240) comporte en outre une couche réalisée dans un matériau ferromagnétique (7), dite couche de stabilisation, au contact de la première couche antiferromagnétique (6) par sa face opposée à la couche libre (5), les directions d'aimantation desdites couches libre (5) et de stabilisation (7) étant sensiblement perpendiculaires. Une première couche (5) parmi lesdites couches libre (5) et de stabilisation (7) présente une aimantation dont la direction est orientée dans le plan de ladite première couche (5) tandis que la deuxième (7) des deux couches parmi lesdites couches libre (5) et de stabilisation (7) présente une aimantation dont la direction est orientée hors du plan de ladite deuxième couche (7).

    摘要翻译： 装置（24）具有接触自由磁性层（5）的反铁磁层（6）。 稳定层（7）由铁磁材料制成，并且通过其与磁性层相对的表面接触反铁磁层，磁性层和稳定层的磁化方向彼此垂直。 磁性层的磁化方向定向在磁性层的平面内。 稳定层的磁化方向定向在稳定层平面的外侧。

    MAGNETIZATION-REVERSING APPARATUS, MEMORY ELEMENT, AND MAGNETIC FIELD-GENERATING APPARATUS
    97.
    发明公开
    MAGNETIZATION-REVERSING APPARATUS, MEMORY ELEMENT, AND MAGNETIC FIELD-GENERATING APPARATUS 审中-公开
    MAGNETISIERUNGSUMKEHRUNGSVORRICHTUNG，SPEICHERELEMENT UND MAGNETFELDERZEUGUNGSVORRICHTUNG

    公开(公告)号：EP2453482A1

    公开(公告)日：2012-05-16

    申请号：EP10797202.8

    申请日：2010-07-09

    申请人： Kyushu University, National University Corporation

    发明人： KIMURA Takashi ,  HAMAYA Kohei

    IPC分类号： H01L29/82 ,  G11B5/31 ,  H01L21/8246 ,  H01L27/105

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/22

    摘要： A magnetization reversal device includes a ferromagnetic 12 body which is provided in an interconnection of a non-ferromagnetic dot 11 so that a part or a whole of the ferromagnetic dot is three-dimensionally buried in the interconnection of said non-ferromagnetic dot, and a spin injection source 13 which generates a spin-polarized pure spin current without a flow of charges, and which is provided in the interconnection of the non-ferromagnetic dot 11 to be in contact therewith so that the interconnection of the non-ferromagnetic dot serves as a common electrode, and the pure spin current flows into the ferromagnetic dot 2 through the interconnection of the non-magnetic body by the spin injection source 13 due to a diffusion current, to thereby reverse magnetization of the ferromagnetic dot 12. By injecting the pure spin current, using this planar structure, it is possible to easily carry out the magnetization reversal of the ferromagnetic dot 12 even if it is a thick film ferromagnetic dot without being subjected to limitation of a spin diffusion length.

    摘要翻译： 磁化反转装置包括铁磁体12，其设置在非铁磁点11的互连中，使得铁磁点的一部分或全部三维地埋在所述非铁磁点的互连中，并且 自旋注入源13，其产生自旋极化的纯自旋电流而不流动电荷，并且设置在非铁磁点11的互连中以与其接触，使得非铁磁性点的互连用作 公共电极，并且纯自旋电流由于扩散电流而通过自旋注入源13通过非磁性体的互连而流入铁磁点2，从而反转铁磁点12的磁化。通过注入纯的 旋转电流使用这种平面结构，即使是厚膜铁磁体也可以容易地进行铁磁性点12的磁化反转 c点而不受自旋扩散长度的限制。

    MAGNETOELEKTRONISCHE BAUELEMENTE UND MESSVERFAHREN
    100.
    发明公开
    MAGNETOELEKTRONISCHE BAUELEMENTE UND MESSVERFAHREN 审中-公开
    磁电子元件及测量方法

    公开(公告)号：EP2430675A1

    公开(公告)日：2012-03-21

    申请号：EP10725001.1

    申请日：2010-05-03

    申请人： Forschungszentrum Jülich Gmbh

    发明人： HERTEL, Riccardo ,  YAN, Ming

    IPC分类号： H01L43/00 ,  G11C11/16

    CPC分类号： H01L43/00 ,  G01R33/1292 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1693 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2207/00 ,  H01L21/00 ,  H01L2221/00

    摘要： Disclosed are magnetoelectronic components that comprise: at least one elongate operating structure which is made of a ferromagnetic material and along which magnetic domain walls can migrate; means for applying to this operating structure an electric current; and at least one magnetic field sensor for the magnetic field emitted by the operating structure. According to the invention, the operating structure is designed such that it comprises domain walls, the transverse magnetizing direction of which has no preferred direction in the center thereof in the plane perpendicular to the migration direction of the domain walls along the operating structure, and/or such that the operating structure can form massless domain walls. It was detected that the kinetic energy of this type of moving domain walls disappears, and hence they are not subject to the Walker limit nor to intrinsic pinning. As a result, the components can input, save or process and ultimately output information more quickly. The invention also relates to a method for measuring a non-adiabatic spin transfer parameter ß of a ferromagnetic material. This method was developed during the course of an in-depth study of the phenomena detected.