公开(公告)号：EP2038456A2

公开(公告)日：2009-03-25

申请号：EP07812070.6

申请日：2007-06-08

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： ARENA, Chantal ,  WERKHOVEN, Christiaan ,  STEIDL, Thomas, Andrew ,  BIRTCHER, Charles, Michael ,  CLARK, Robert, Daniel

IPC分类号： C30B29/40

CPC分类号： C30B29/40 ,  C30B25/02 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406

摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods and equipment are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the precursor is provided at a mass flow of at least 50g Group III element/hour for a time of at least 48 hours to facilitate high volume manufacture of the semiconductor material. Advantageously, the mass flow of the gaseous Group III precursor is controlled to deliver the desired amount.

公开(公告)号：EP2016205A2

公开(公告)日：2009-01-21

申请号：EP07775131.1

申请日：2007-04-09

申请人： S.O.I.TEC Silicon on Insulator Technologies S.A.

发明人： CODY, Nyles, W. ,  ARENA, Chantel ,  TOMASINI, Pierre ,  MAZURE, Carlos

IPC分类号： C23C16/22 ,  C23C16/24 ,  C23C16/455 ,  C30B25/02 ,  C30B29/02 ,  C30B25/14 ,  C30B29/06

CPC分类号： C23C16/22 ,  C23C16/24 ,  C23C16/45523 ,  C30B25/165 ,  C30B29/52

摘要： Pile ups of threading dislocations in thick graded buffer layer are reduced by enhancing dislocation gliding. During formation of a graded SiGe buffer layer, deposition of SiGe from a silicon precursor and a germanium precursor is interrupted one or more times with periods in which the flow of the silicon precursor to the substrate is stopped while the flow of the germanium precursor to the substrate is maintained.

摘要翻译： 通过增强位错滑行，减少厚度梯度缓冲层穿透位错的堆积。 在形成渐变的SiGe缓冲层期间，从硅前体和锗前体的SiGe的沉积被中断一次或多次，其中停止向硅衬底的硅前驱体的流动，同时锗前体流向 保持底物。

公开(公告)号：EP1984544A2

公开(公告)日：2008-10-29

申请号：EP07717395.3

申请日：2007-01-25

申请人： Caracal, Inc.

发明人： KORDINA, Olof Claes Erik

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： C30B25/00 ,  C30B25/14 ,  C30B25/165 ,  C30B29/36 ,  Y10T117/1096

摘要： A method of forming silicon carbide wherein silicon and carbon precursors are successively pulsed into a reactor in the gas phase. The precursors react to form silicon carbide before reaching the growth surface. A precursor will be preheated in the reaction chamber before reacting with the other precursor. The formed silicon carbide sublime then condenses on a growth surface.

摘要翻译： 一种形成碳化硅的方法，其中硅和碳前体在气相中连续脉冲进入反应器。 前体在到达生长表面之前反应形成碳化硅。 前体将在与另一前体反应之前在反应室中预热。 所形成的碳化硅升华然后冷凝在生长表面上。

公开(公告)号：EP1953831A2

公开(公告)日：2008-08-06

申请号：EP08001050.7

申请日：2008-01-21

申请人： Sharp Kabushiki Kaisha

发明人： Nasuno, Yoshiyuki ,  Ishikawa, Yasuaki ,  Nakano, Takanori

IPC分类号： H01L31/075

CPC分类号： H01L31/076 ,  C23C16/24 ,  C23C16/325 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/5096 ,  C30B25/105 ,  C30B25/165 ,  C30B29/06 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A stacked photoelectric conversion device includes a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each having a p-i-n junction and made of a silicon base semiconductor, stacked in this order from a light entrance side, wherein the first and the second photoelectric conversion layers have an i-type amorphous layer made of an amorphous silicon base semiconductor, respectively, and the third photoelectric conversion layer has an i-type microcrystalline layer made of a microcrystalline silicon base semiconductor.

摘要翻译： 堆叠式光电转换装置包括从光入射侧依次堆叠的具有pin接点并由硅基半导体制成的第一光电转换层，第二光电转换层和第三光电转换层，其中，第一和 第二光电转换层分别具有由非晶硅基半导体构成的i型非晶层，第三光电转换层具有由微晶硅基半导体构成的i型微晶层。

公开(公告)号：EP1953808A1

公开(公告)日：2008-08-06

申请号：EP06822227.2

申请日：2006-10-25

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： KANAYA, Koichi ,  OHNISHI, Masato

IPC分类号： H01L21/205 ,  C23C16/24 ,  H01L21/02

CPC分类号： C30B25/16 ,  C30B25/02 ,  C30B25/165 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02634

摘要： The present invention provides a method for manufacturing an epitaxial wafer by supplying a raw material gas onto a silicon wafer to perform vapor-phase growth of an epitaxial layer, wherein a thickness of the epitaxial layer that is formed at a peripheral portion of the silicon wafer is controlled by controlling a growth rate and/or a growth temperature of the epitaxial layer that is subjected to vapor-phase growth. As a result, there is provided the method that enables manufacturing an epitaxial wafer having a small roll-off value by controlling a thickness of an epitaxial layer near the outermost periphery at the time of epitaxial growth.

摘要翻译： 本发明提供一种通过将原料气体供给到硅晶片上以进行外延层的气相生长来制造外延晶片的方法，其中形成在硅晶片的周边部分的外延层的厚度 通过控制经历气相生长的外延层的生长速率和/或生长温度来控制。 结果，提供了通过在外延生长时控制最外周附近的外延层的厚度，能够制造具有小滚降值的外延晶片的方法。

公开(公告)号：EP1900856A2

公开(公告)日：2008-03-19

申请号：EP07115627.7

申请日：2007-09-04

申请人： Denso Corporation

发明人： Nagakubo, Masao c/o DENSO Corporation ,  Kitoh, Yasuo c/o DENSO Corporation ,  Hirose, Fusao c/o DENSO Corporation

IPC分类号： C30B25/02 ,  C30B29/36 ,  C30B25/16

CPC分类号： C30B29/36 ,  C23C16/325 ,  C23C16/45578 ,  C30B25/12 ,  C30B25/14 ,  C30B25/165 ,  Y10T117/10

摘要： A silicon carbide manufacturing device includes a graphite crucible (1), in which a seed crystal (9) is disposed, a gas-inducing pipe (3) coupled with the graphite crucible (1), and an attachment prevention apparatus (4). The gas-inducing pipe (3) has a column-shaped hollow part, through which a source gas flows into the graphite crucible (1). The attachment prevention apparatus (4) includes a rod (16) extending to a flow direction of the source gas, and a revolving and rotating element (12-15, 17) for revolving the rod (16) along an inner wall of the gas-inducing pipe (3) while rotating the rod (16) on an axis of the rod (16) in parallel to the flow direction.

摘要翻译： 碳化硅制造装置包括其中设置有晶种（9）的石墨坩埚（1），与石墨坩埚（1）连接的气体诱导管（3）和附着防止装置（4）。 气体诱导管（3）具有柱状中空部，源气体通过该中空部流入石墨坩埚（1）。 附着防止装置（4）包括沿着源气体的流动方向延伸的杆（16），以及用于沿着气体的内壁旋转杆（16）的旋转和旋转元件（12-15,17） 同时在杆（16）的轴线上平行于流动方向旋转杆（16）。

公开(公告)号：EP1678353A2

公开(公告)日：2006-07-12

申请号：EP04789439.9

申请日：2004-09-30

申请人： Aviza Technology, Inc.

发明人： LEE, Sang-In ,  OWYANG, Jon S. ,  SENZAKI, Yoshihide ,  HELMS, Aubrey L. ,  KAPKIN, Kerem

IPC分类号： C30B25/00

CPC分类号： C23C16/45525 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/405 ,  C23C16/42 ,  C23C16/45553 ,  C30B25/165 ,  C30B29/16 ,  H01L21/3141 ,  H01L21/31645

摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

公开(公告)号：EP1335997A1

公开(公告)日：2003-08-20

申请号：EP01983565.1

申请日：2001-10-25

申请人： Aixtron AG

发明人： KÄPPELER, Johannes

IPC分类号： C30B25/14 ,  C30B25/16 ,  C30B25/10 ,  C23C16/458

CPC分类号： C23C16/46 ,  C23C16/4584 ,  C30B25/10 ,  C30B25/14 ,  C30B25/16 ,  C30B25/165

摘要： The invention relates to a method for controlling the surface temperatures of substrates arranged on substrate supports borne by a substrate support carrier on dynamic gas cushions in a processing chamber of a CVD-reactor. The aim of the invention is to reduce or adjust the temperature variations. According to the invention, an average surface temperature value (T1-T5) is calculated, being measured in a particularly optical manner, and the level of the gas cushions (8) is regulated by varying the individually controlled gas flow producing the gas cushions in such a way that the variations of the measured surface temperatures (T1 - T5) in relation to the average value lies within a predetermined temperature window (TU, TL).

公开(公告)号：EP1039514A1

公开(公告)日：2000-09-27

申请号：EP99943290.9

申请日：1999-09-13

申请人： Matsushita Electric Industrial Co., Ltd.

发明人： NOZAWA, Katsuya ,  KUBO, Minoru ,  SAITOH, Tohru ,  TAKAGI, Takeshi

IPC分类号： H01L21/205

CPC分类号： C30B29/06 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

摘要： A crystal growing apparatus comprises a vacuum vessel (10), a heating lamp (12), a lamp controller (13) for controlling the heating lamp (12), a gas inlet port (14), a flow rate adjuster (15) for adjusting the flow rate of a gas, a pyrometer (19) for measuring the temperature of a substrate, and a gas supply unit (30) for supplying a Si 2 H 6 gas or the like to the vacuum vessel (10). An apparatus for ellipsometric measurement comprises: a light source (20), a polariscope (21), a modulator (22), an analyzer (24), a spectroscope/detector unit (25), and an analysis control unit (26) for calculating Ψ, Δ. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.

摘要翻译： 一种晶体生长装置包括真空容器（10），一个加热灯（12），一个灯控制部（13），用于控制加热灯（12），一个进气口（14），流量调整器（15），用于 调节气体的流量，用于测量衬底温度的高温计（19），和用于提供一个Si2H6气体或等向真空容器（10）的气体供给单元（30）。 对于椭偏测量的装置，包括：一个光源（20），一个偏光镜（21），调制器​​（22）到分析器（24），分光器/检测器单元（25），并分析控制单元（26），用于 计算PSI DELTA。 在从原位那里去除化学氧化膜在衬底上椭偏测量允许哪个期间基板的表面覆盖有氧化物膜和在基片的表面部分地露出的阶段2的相位1之间的判别 所以没有适合于各相气体的供给被执行和暂停。

公开(公告)号：EP0431415A3

公开(公告)日：1993-10-06

申请号：EP90122371.9

申请日：1990-11-23

申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Manada, Nobuaki ,  Kurabayashi, Toru ,  Nishizawa, Jun-ichi

发明人： Manada, Nobuaki ,  Ito, Junji ,  Kurabayashi, Toru ,  Nishizawa, Jun-ichi

IPC分类号： C30B25/02 ,  C30B25/10

CPC分类号： C23C16/45561 ,  C30B25/14 ,  C30B25/165

摘要： In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.