摘要:
The present invention has an object to provide a producing method and producing apparatus of multilayered printed-circuit board that has eliminated the resin flow and resolved the problems of board thickness discrepancy and misregistration. A producing method of multilayered printed-circuit board , comprising steps of stacking up a laminated sheet covered with conductive foil or conductor for outer layer, a prepreg and a laminated sheet covered with conductor for inner layer and, thereafter, setting the prepreg by pressurizing/heating, wherein, before conducting the pressurizing/heating, gas is sprayed to the surface of the laminated sheet covered with conductive foil or conductor for outer layer, a prepreg and a laminated sheet covered with conductor for inner layer to eliminate impurities from the surface.
摘要:
There is provided a method and an apparatus for collecting a rare gas, which are capable of effectively collecting the rare gas contained in an exhaust gas exhausted from a rare gas using apparatus such as a plasma apparatus or the like, and moreover capable of securely supplying the rare gas having a predetermined purity to the rare gas using apparatus, and the method for collecting rare gas which comprises collecting a rare gas contained in an exhaust gas exhausted from a rare gas using apparatus operated under decompression, the method comprises the step of collecting the rare gas by separating the rare gas and impurities contained in the exhaust gas via at least two gas separating steps.
摘要:
A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.
摘要:
A construction for mounting a pressure detector prevents the detector diaphragm from being strained by stress applied to the pressure detector as the detector is mounted in a fixture main body provided in a pipe line or the like, thereby keeping the output characteristics and temperature characteristics of the detector from greatly differing before and after the mounting. The pressure detector is constructed by combining and fastening together a diaphragm base having a diaphragm and a sensor base having a sensor element therein that is activated by displacement of the diaphragm base. The pressure detector, with a gasket placed thereunder, is disposed in a mounting hole of a fixture main body that is mounted in a pipe line. The pressure detector is airtightly pressed and fastened by a presser member inserted from above in the mounting hole. The presser member is brought in contact with a block upper surface of the diaphragm base, and the gasket is also brought in contact with the block lower surface of the diaphragm base. A shallow groove is defined in the form of a ring on the lower surface of the block at a place inward of the portion contacting the metal gasket so that the shallow groove absorbs strain caused by the presser member.
摘要:
A semiconductor circuit of large-scale integration for storing analog data and multivalued data accurately at high speed. The semiconductor circuit comprises memory cells for analog and multivalued signals, a read circuit provided with an output to produce voltage indicating a value stored in the memory cell, a comparator provided with an output to produce an end-of-write signal when the voltage at the output of the read circuit becomes equal to a predetermined voltage, a write voltage control circuit having an input for receiving analog and multivalued voltage as write voltage of the memory cell and having an output for producing voltage corresponding to the voltage value, and a write voltage switch circuit for supplying the output voltage from the write voltage control circuit to the memory cell until the end-of-write signal appears at the output of the comparator.
摘要:
With reference to one or more pieces of data (for example, the data at the left end in a block of 4 × 4 pixels) in a data string constituting one code vector in a code book, a code vector is generated by giving a value which increases in an increment of a predetermined value from the reference data value K to each piece of the other data in the block. A greatly versatile code book can be made at least for data on a pattern, for example, a face image, whose data value gradually varies by a small change.
摘要:
There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing. There is provided a computing unit for computing input data, and this computing unit computes input digit data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders 1-3) for outputting carry data representing this carry, and delay means (memory 4) for delaying the computation result from the computation circuit by one computation time unit, are provided.
摘要:
A fluid-switchable flow rate control system that permits free changing of the full scale flow rate and which can control a plurality of kinds of fluids with high precision. The fluid-switchable flow rate control system controls the flow rate of fluid with the pressure P 1 on the upstream side of the orifice member held about twice or more higher than the downstream pressure P 2 , the fluid-switchable flow rate control system comprising an orifice member 8 replaceable with another to provide a suitable orifice diameter according to the kind of fluid and the flow rate range, a control valve 2 provided on the upstream side thereof, a pressure detector 6 provided between the control valve 2 and the orifice member 8, and a flow rate calculation circuit 14 where, from the pressure P 1 detected by the pressure detector, the flow rate Qc is calculated by the equation Qc = KP 1 (K: constant), a flow rate-setting circuit 16 for outputting flow rate setting signal Qe, a flow rate conversion circuit 18 for multiplying the calculated flow rate signal Qc by the flow rate conversion rate k into switch-over calculated flow rate signal Qf ( Qf = kQc ) to change the full scale flow rate, and a calculation control circuit 20 to output the difference between the switch-over calculation flow rate signal Qf and the flow rate setting signal Qe as control signal Qy to the drive 4 of the control valve 2, thereby opening or closing the control valve to bring the control signal Qy to zero, thus controlling the flow rate on the downstream side of the orifice member.
摘要:
A fluid control device has formed in a valve main body a main channel communicating with an inlet of a channel within a massflow controller, and a relatively long subchannel and a relatively short subchannel both communicating with the main channel. The process gas to be assure of high purity is passed through the relatively long subchannel.