METHOD AND APPARATUS FOR MANUFACTURING MULTILAYER PRINTED WIRING BOARD
    142.
    发明公开
    METHOD AND APPARATUS FOR MANUFACTURING MULTILAYER PRINTED WIRING BOARD 有权
    设计方法ZUR HERSTELLUNG VON MEHRSCHICHTIGEN LEITERPLATTEN

    公开(公告)号:EP1213953A1

    公开(公告)日:2002-06-12

    申请号:EP00950063.8

    申请日:2000-08-11

    IPC分类号: H05K3/46

    摘要: The present invention has an object to provide a producing method and producing apparatus of multilayered printed-circuit board that has eliminated the resin flow and resolved the problems of board thickness discrepancy and misregistration.
    A producing method of multilayered printed-circuit board , comprising steps of stacking up a laminated sheet covered with conductive foil or conductor for outer layer, a prepreg and a laminated sheet covered with conductor for inner layer and, thereafter, setting the prepreg by pressurizing/heating, wherein, before conducting the pressurizing/heating, gas is sprayed to the surface of the laminated sheet covered with conductive foil or conductor for outer layer, a prepreg and a laminated sheet covered with conductor for inner layer to eliminate impurities from the surface.

    摘要翻译: 本发明的目的是提供一种消除树脂流动的多层印刷电路板的制造方法和制造装置,并且解决了板厚差异和重合不良的问题。 一种多层印刷电路板的制造方法,其特征在于,包括层叠有覆盖有导电箔或外层导体的层压片材,预浸料坯和被内层导体覆盖的层压片材,然后通过加压/ 加热,其中,在进行加压/加热之前,将气体喷射到覆盖有用于外层的导电箔或导体的层叠片材的表面,预浸料和覆盖有内层导体的层压片材以从表面除去杂质。

    Method and apparatus for collecting rare gas
    143.
    发明公开
    Method and apparatus for collecting rare gas 有权
    Verfahren und Vorrichtung zum Sammeln von Edelgas

    公开(公告)号:EP1190759A2

    公开(公告)日:2002-03-27

    申请号:EP01402414.5

    申请日:2001-09-20

    IPC分类号: B01D53/22 B01D53/04

    摘要: There is provided a method and an apparatus for collecting a rare gas, which are capable of effectively collecting the rare gas contained in an exhaust gas exhausted from a rare gas using apparatus such as a plasma apparatus or the like, and moreover capable of securely supplying the rare gas having a predetermined purity to the rare gas using apparatus, and the method for collecting rare gas which comprises collecting a rare gas contained in an exhaust gas exhausted from a rare gas using apparatus operated under decompression, the method comprises the step of collecting the rare gas by separating the rare gas and impurities contained in the exhaust gas via at least two gas separating steps.

    摘要翻译: 提供了一种用于收集稀有气体的方法和装置,其能够使用诸如等离子体装置等的装置有效地收集从稀有气体排出的废气中所含的稀有气体,并且还能够可靠地供应 对于稀有气体使用装置,具有预定纯度的稀有气体,以及收集稀有气体的方法,其特征在于,使用在减压下运转的装置收集从稀有气体排出的废气中所含的稀有气体,所述方法包括: 通过至少两个气体分离步骤分离废气中所含的稀有气体和杂质的稀有气体。

    SEMICONDUCTOR DEVICE, METHOD FOR FORMING SILICON OXIDE FILM, AND APPARATUS FOR FORMING SILICON OXIDE FILM
    144.
    发明公开

    公开(公告)号:EP1130634A1

    公开(公告)日:2001-09-05

    申请号:EP00949896.5

    申请日:2000-07-26

    申请人: Ohmi, Tadahiro

    发明人: Ohmi, Tadahiro

    摘要: A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.

    摘要翻译: 用作半导体器件的栅极绝缘膜的氧化硅膜(1701)包含Kr。 因此,氧化硅膜(1701)中的应力和硅与氧化硅膜之间的界面处的应力被松弛,并且氧化硅膜即使在低温下形成也具有高质量。 元件隔离区域的槽(凹部)的侧壁的硅上的氧化硅膜(1701)的厚度均匀度为30%以下。 因此,氧化硅膜(1701)的特性和可靠性优于硅热氧化膜,可以使元件隔离区域小,从而实现优选适于SOI晶体管的高性能晶体管集成电路, 一个TFT。

    VERSATILE FLOW RATE CONTROLLER
    149.
    发明公开
    VERSATILE FLOW RATE CONTROLLER 有权
    柔性纤维素

    公开(公告)号:EP1026566A1

    公开(公告)日:2000-08-09

    申请号:EP99935121.6

    申请日:1999-08-09

    IPC分类号: G05D7/06

    摘要: A fluid-switchable flow rate control system that permits free changing of the full scale flow rate and which can control a plurality of kinds of fluids with high precision.
    The fluid-switchable flow rate control system controls the flow rate of fluid with the pressure P 1 on the upstream side of the orifice member held about twice or more higher than the downstream pressure P 2 , the fluid-switchable flow rate control system comprising an orifice member 8 replaceable with another to provide a suitable orifice diameter according to the kind of fluid and the flow rate range, a control valve 2 provided on the upstream side thereof, a pressure detector 6 provided between the control valve 2 and the orifice member 8, and a flow rate calculation circuit 14 where, from the pressure P 1 detected by the pressure detector, the flow rate Qc is calculated by the equation Qc = KP 1 (K: constant), a flow rate-setting circuit 16 for outputting flow rate setting signal Qe, a flow rate conversion circuit 18 for multiplying the calculated flow rate signal Qc by the flow rate conversion rate k into switch-over calculated flow rate signal Qf ( Qf = kQc ) to change the full scale flow rate, and a calculation control circuit 20 to output the difference between the switch-over calculation flow rate signal Qf and the flow rate setting signal Qe as control signal Qy to the drive 4 of the control valve 2, thereby opening or closing the control valve to bring the control signal Qy to zero, thus controlling the flow rate on the downstream side of the orifice member.

    摘要翻译: 一种可流体切换的流量控制系统,其允许满量程流量的自由变化并且可以高精度地控制多种流体。 流体切换流量控制系统控制流体的流量,其中孔口部件的上游侧的压力P1保持在比下游压力P2大约两倍或更多的高度,流体可切换流量控制系统包括孔口部件 8可替换为另一个,以根据流体种类和流量范围提供合适的孔径,设置在其上游侧的控制阀2,设置在控制阀2和孔口构件8之间的压力检测器6,以及 流量计算电路14,其中根据由压力检测器检测到的压力P1通过公式Qc = KP1(K:常数)计算流量Qc;流量设定电路16,用于输出流量设定信号Qe ,用于将计算出的流量信号Qc乘以流量转换率k的流量转换电路18转换为切换计算流量信号Qf(Qf = kQc),以改变满量程fl 以及将切换计算流量信号Qf和流量设定信号Qe之间的差作为控制信号Qy输出到控制阀2的驱动器4的计算控制电路20,由此打开或关闭控制 使控制信号Qy为零,从而控制孔构件下游侧的流量。