公开(公告)号：EP2777069A2

公开(公告)日：2014-09-17

申请号：EP12847303.0

申请日：2012-11-08

申请人： Intevac, Inc. ,  Pederson, Terry ,  Hieslmair, Henry ,  Chun, Moon ,  Prabhakar, Vinay ,  Adibi, Babak ,  Bluck, Terry

发明人： PEDERSON, Terry ,  HIESLMAIR, Henry ,  CHUN, Moon ,  PRABHAKAR, Vinay ,  ADIBI, Babak ,  BLUCK, Terry

IPC分类号： H01L21/677 ,  H01L21/687

CPC分类号： H01L21/6833 ,  H01L21/26506 ,  H01L21/67745 ,  H01L21/6776 ,  H01L21/681 ,  H01L21/6831 ,  H01L31/1876 ,  H02N13/00 ,  Y02E10/50 ,  Y02P70/521

摘要： A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.

公开(公告)号：EP2641266A4

公开(公告)日：2014-08-27

申请号：EP11841747

申请日：2011-11-17

申请人： INTEVAC INC

发明人： CHUN MOON ,  ADIBI BABAK

IPC分类号： H01L21/20 ,  H01L21/223 ,  H01L21/324 ,  H01L31/18

CPC分类号： H01L31/1864 ,  H01L21/2236 ,  H01L21/324 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2308060A1

公开(公告)日：2011-04-13

申请号：EP09763656.7

申请日：2009-06-11

申请人： Intevac, Inc.

发明人： ADIBI, Babak ,  MURRER, Edward, S.

IPC分类号： G21K5/10

CPC分类号： H01L21/266 ,  H01L21/26513 ,  H01L31/022425 ,  H01L31/072 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate includes an ion source (such as a single-species delivery module), an accelerator to generate from the ion source an ion beam having an energy of no more than 150kV, and a beam director to expose the substrate to the beam. In one embodiment, the ion source is single-species delivery module that includes a single-gas delivery element and a single-ion source. Alternatively, the ion source is a plasma source used to generate a plasma beam. The system is used to fabricate solar cells having lightly doped photo-receptive regions and more highly doped grid lines. This structure reduces the formation of "dead layers" and improves the contact resistance, thereby increasing the efficiency of a solar cell.

公开(公告)号：EP1815041A4

公开(公告)日：2009-07-29

申请号：EP05825763

申请日：2005-10-31

申请人： INTEVAC INC

发明人： FAIRBAIRN KEVIN P ,  PONNEKANTI HARI ,  LANE CHRISTOPHER ,  WEISS ROBERT EDWARD ,  LATCHFORD IAN ,  BLUCK TERRY

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67201 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67745

摘要： Described is a method for manufacturing wafers and a manufacturing system in which the footprint is substantially contained in a size approximating the processing chambers. Single wafers move horizontally through the system and processing occurs simultaneously in groups of processing chambers. Various manufacturing processes employed in making semiconductor wafers are included as processing chambers in the system.

公开(公告)号：EP2073252A2

公开(公告)日：2009-06-24

申请号：EP08171670.6

申请日：2008-12-15

申请人： INTEVAC, INC.

发明人： Samir, Tugrul ,  Barnes, Michael S. ,  Bluck, Terry

IPC分类号： H01L21/00

CPC分类号： H01L21/67017 ,  H01L21/6719 ,  Y10T29/49

摘要： A process chamber having high conductance and a method of manufacturing the process chamber are disclosed. The process chamber is machined from a single piece of aluminum where a process cavity and a pump cavity are created by intersecting cylinders. A substrate opening is also created at a bottom of the process cavity to provide conduit for services, such as cooling gas and electrical connections. A large undercut area is formed at a top of the pump cavity between the pump cavity and the process cavity. The undercut extends past the process chamber centerline at the process cavity. A circular saw is used to remove material and create a plenum which extends beyond the process cavity centerline.

摘要翻译： 公开了具有高电导率的处理室和制造处理室的方法。 处理室由单片铝加工，其中通过相交的圆柱体形成工艺腔和泵腔。 在处理腔的底部还形成衬底开口以提供诸如冷却气体和电连接等服务的导管。 在泵腔和过程腔之间的泵腔的顶部形成有大的底切区域。 底切延伸过程腔的中心线。 使用圆锯去除材料并产生延伸超过工艺腔中心线的气室。

公开(公告)号：EP2043143A2

公开(公告)日：2009-04-01

申请号：EP08253135.1

申请日：2008-09-25

申请人： INTEVAC, INC.

发明人： Samir, Tugrul ,  Grimard, Dennis

IPC分类号： H01L21/683 ,  H01L21/687 ,  C23C16/458

CPC分类号： H01L21/68735 ,  H01L21/6833

摘要： An electrostatic chuck (110) includes an angled conduit (160), or an angled laser drilled passage, through which a heat transfer gas is provided. A segment of the angled conduit (160) and/or the angled laser drilled passage extends along an axis different from an axis (147) of the electric field generated to hold a substrate (130) to the chuck, thereby minimizing plasma arcing and backside gas ionization. A first plug may be inserted into the conduit, wherein a segment of a first exterior channel thereof extends along an axis different from an axis of the electric field. A first and second plug may be inserted into a ceramic sleeve which extends through at least one of the dielectric member (117) and the electrode (115). Finally, the surface of the dielectric member may comprise embossments (600) arranged at radial distances from the center of the dielectric member so as to improve heat transfer and gas distribution.

摘要翻译： 静电卡盘（110）包括成角度的导管（160）或成角度的激光钻孔通道，通过该通道提供传热气体。 成角度的管道（160）和/或成角度的激光钻孔通道的一段沿着不同于将衬底（130）保持在卡盘上的电场的轴线（147）的轴线延伸，从而最小化等离子体电弧放电和背面 气体电离。 第一插头可以插入导管中，其中第一外部通道的一段沿着不同于电场的轴的轴线延伸。 可以将第一和第二插头插入延伸穿过电介质构件（117）和电极（115）中的至少一个的陶瓷套管中。 最后，电介质构件的表面可以包括布置在离电介质构件的中心的径向距离处的凸起（600），以便改善传热和气体分布。

公开(公告)号：EP1448806A4

公开(公告)日：2006-11-08

申请号：EP02802811

申请日：2002-10-30

申请人： INTEVAC INC

发明人： JOHNSON PAUL MARKOFF ,  POND NORMAAN H ,  RUCK ROBERT ,  FO NATHAN

IPC分类号： C23C14/14 ,  C23C14/34 ,  G11B5/851 ,  G11B7/26 ,  C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/3464 ,  G11B5/851 ,  Y10T428/12

摘要： Sequential sputtered film deposition of distinct materials on a workpiece is obtained with discrete targets composed of such distinct materials disposed on separate area portions of a common cathode/heatsink. Sputtering without cross contamination of the deposited films is enabled during an interval of relative motion between the target and workpiece or in an indexed static relative disposition, wherein the workpiece projection is entirely proximate one such portion to deposit the respective layer.

公开(公告)号：EP1592822A2

公开(公告)日：2005-11-09

申请号：EP04703559.7

申请日：2004-01-20

申请人： INTEVAC, INC.

发明人： FAIRBAIRN, Kevin, P. ,  BLUCK, Terry ,  MARION, Craig ,  Weiss, Robert E.

IPC分类号： C23C14/00

CPC分类号： C23C16/4587 ,  C23C14/568 ,  C23C16/54 ,  G11B5/00 ,  G11B5/8404 ,  H01L21/67161 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/67276

摘要： There is described a disk processing and manufacturing equipment in which the processing chambers are stacked on top of each other and in which the disks move through the system on disk carriers which are adjustable to take disks of varying sizes. The disks enter the system through a load zone and are then installed into disk carriers. They move in the carriers sequentially through processing chambers at one level and then move to the other level in a lift or elevator. At this other level, the disks again move sequentially through the system on that level and then exit at an unload zone.

公开(公告)号：EP1306906A1

公开(公告)日：2003-05-02

申请号：EP02025164.1

申请日：2000-07-14

申请人： INTEVAC, INC. ,  THE CHARLES STARK DRAPER LABORATORY, INC.

发明人： Aebi, Verie, W. ,  Boyle, John James

IPC分类号： H01L31/00 ,  H01L31/0203 ,  H01L27/146

CPC分类号： H01J31/26 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/33 ,  H04N5/335

摘要： A low light level system is described wherein electrons, created by images directed to a photocathode (31), directly bombard active pixel sensors. Both the active pixel sensors and the output end of the photocathode are positioned in a vacuum envelope. The electron released from the photocathode (31), are directed to and at the active pixel sensors (32). The output of the active pixel sensor (32) detector may be stored, viewed or displayed at a remote location. Various applications are described including a novel camera.

摘要翻译： 描述了一种低光级系统，其中由导向光电阴极（31）的图像产生的电子直接轰击有源像素传感器。 有源像素传感器和光电阴极的输出端都位于真空封套中。 从光电阴极（31）释放的电子被引导到有源像素传感器（32）上。 有源像素传感器（32）检测器的输出可以在远程位置存储，查看或显示。 描述了包括新型相机的各种应用。

公开(公告)号：EP0789935B1

公开(公告)日：2003-04-23

申请号：EP95938897.6

申请日：1995-10-25

申请人： INTEVAC, INC.

发明人： DAVIS, Gary, A.

IPC分类号： H01L31/075 ,  H01L31/105 ,  H01L31/109

CPC分类号： H01L31/1035 ,  H01L29/205 ,  H01L31/105 ,  H01L31/108