NANOSCALE WIRE-BASED DATA STORAGE
    12.
    发明公开
    NANOSCALE WIRE-BASED DATA STORAGE 审中-公开
    纳米级有线数据存储

    公开(公告)号:EP1831973A2

    公开(公告)日:2007-09-12

    申请号:EP05858579.5

    申请日:2005-12-06

    IPC分类号: H01R24/00

    摘要: The present invention generally relates to nanotechnology and sub­microelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other nanostructure having a region that is electrically-polarizable, for example, a nanoscale wire may comprise a core and an electrically-polarizable shell. In some cases, the electrically-polarizable region is able to retain its polarization state in the absence of an external electric field. All, or only a portion, of the electrically­polarizable region may be polarized, for example, to encode one or more bits of data. In one set of embodiments, the electrically-polarizable region comprises a functional oxide or a ferroelectric oxide material, for example, BaTiO3, lead zirconium titanate, or the like. In some embodiments, the nanoscale wire (or other nanostructure) may further comprise other materials, for example, a separation region separating the electrically­polarizable region from other regions of the nanoscale wire. For example, in a nanoscale wire, one or more intermediate shells may separate the core from the electrically­polarizable shell.

    NANOSCALE FIELD-EFFECT TRANSISTORS FOR BIOMOLECULAR SENSORS AND OTHER APPLICATIONS
    16.
    发明公开
    NANOSCALE FIELD-EFFECT TRANSISTORS FOR BIOMOLECULAR SENSORS AND OTHER APPLICATIONS 审中-公开
    NANOSKALIGE FELDEFFEKTTRANSISTORENFÜRBIOMOLEKULARE SENSOREN UND ANDERE ANWENDUNGEN

    公开(公告)号:EP2895850A1

    公开(公告)日:2015-07-22

    申请号:EP13766205.2

    申请日:2013-09-12

    摘要: The present invention generally relates to nanoscale wires, including to nanoscale wires used as sensors. In some cases, the nanoscale wires may be used to directly determine analytes, even within relatively complicated environments such as blood, unlike many prior art techniques. In some aspects, the nanoscale wire form at least a portion of the gate of a field-effect transistor, and in certain aspects, different periodically- varying voltages or other electrical signals may be applied to the field-effect transistor. For example, in one set of embodiments, sinusoidally- varying voltages of different frequencies may be applied to the nanoscale wire and the source electrode of the field-effect transistor. The electrical conductance or other properties of the nanoscale wire in response to the periodically- varying voltages may then be determined and used to determine binding of the species.

    摘要翻译: 本发明一般涉及纳米尺度的导线,包括用作传感器的纳米级导线。 在某些情况下,与许多现有技术相比,即使在相对复杂的环境(例如血液)中,纳米线也可用于直接测定分析物。 在一些方面,纳米尺度线形成场效应晶体管的栅极的至少一部分,并且在某些方面,不同的周期性变化的电压或其他电信号可以被施加到场效应晶体管。 例如,在一组实施例中,可以将不同频率的正弦变化电压施加到场效应晶体管的纳米线和源电极。 然后可以确定响应于周期性变化的电压的纳米线的导电性或其它性质并用于确定物种的结合。

    HIGH-SENSITIVITY NANOSCALE WIRE SENSORS
    18.
    发明公开
    HIGH-SENSITIVITY NANOSCALE WIRE SENSORS 有权
    一种操作纳米线场效应晶体管传感器的方法

    公开(公告)号:EP2095100A1

    公开(公告)日:2009-09-02

    申请号:EP07873479.5

    申请日:2007-11-19

    IPC分类号: G01N27/414

    摘要: The present invention generally relates to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. The invention provides a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross- sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length ( lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.