摘要:
A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.
摘要:
A chip scale surface-mountable packaging method for electronic and micro-electro mechanical system (MEMS) devices is provided. The chip scale surface-mountable packaging method includes: (a) forming an interconnection and sealing pattern as a deep trench in one surface of a conductive cover substrate using semiconductor fabricating and micromachining techniques; (b) filling the trench as the pattern of the cover substrate with an insulating material such as glass or ceramic, and planarizing the surface of the cover to form a bonding pattern; (c) accurately aligning the cover substrate with a device substrate, in which electronic or MEMS devices are integrated, and bonding the cover substrate and the device substrate; (d) polishing the other surface of the cover substrate and forming an electrode pattern thereon; and (e) dicing the sealed and interconnected substrates to form a complete chip scale package. Thus, both sealing of the electronic or MEMS devices and their interconnection with external devices can be achieved at a wafer level.
摘要:
Provided are a micro-electro mechanical system (MEMS) device and a method of forming comb electrodes of the MEMS device. The method includes forming a plurality of parallel trenches at regular intervals in one side of a first silicon substrate so as to define alternating first and second regions at different heights on the one side of the first silicon substrate, oxidizing the first silicon substrate in order to form an oxide layer in the first and second regions having different heights, forming a polysilicon layer on the oxide layer to at least fill up the trenches so as to level the oxide layer having different heights, bonding a second silicon substrate directly to a top surface of the polysilicon layer, selectively etching the second silicon substrate and the polysilicon layer using a first mask so as to form upper comb electrodes vertically aligned with the first regions, selectively etching the first silicon substrate using a second mask so as to form lower comb electrodes vertically aligned with the second regions, and removing the oxide layer interposed between the upper comb electrodes and the lower comb electrodes.
摘要:
A vertical MEMS gyroscope operated by horizontal driving includes a substrate, a support layer fixed on an upper surface of an area of the substrate, a driving structure floating above the substrate and having a portion fixed to the upper surface of the support layer and another portion in parallel with the fixed portion, the driving structure having a predetermined area capable of vibrating in a predetermined direction parallel to the substrate, a detection structure fixed to the driving structure on a same plane as the driving structure, and having a predetermined area capable of vibrating in a vertical direction with respect to the substrate, a cap wafer bonded with the substrate positioned above the driving structure and the detection structure, and a fixed vertical displacement detection electrode formed at a predetermined location of an underside of the cap wafer, for detecting displacement of the detection structure in the vertical direction.
摘要:
A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.
摘要:
A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-milling the deposited thin metal film. By the ion-milling, the method is capable of connecting a metal wiring to a via hole having an undercut.
摘要:
A high-vacuum packaged microgyroscope for detecting the inertial angular velocity of an object and a method for manufacturing the same. In the high-vacuum packaged microgyroscope, a substrate with an ASIC circuit for signal processing is mounted onto another substrate including a suspension structure of a microgyroscope in the form of a flip chip. Also, the electrodes of the suspension structure and the ASIC circuit can be exposed to the outside through polysilicon interconnection interposed between double passivation layers. The short interconnection between the suspension structure and the ASIC circuit can reduce the device in size and prevents generation of noise, thereby increasing signal detection sensitivity. In addition, by sealing the two substrates at low temperatures, for example, at 363 to 400°C using co-melting reaction between metal, for example, Au, and Si in a vacuum, the degree of vacuum in the device increases.