公开(公告)号：EP2145349B1

公开(公告)日：2014-09-03

申请号：EP08754077.9

申请日：2008-04-08

申请人： International Business Machines Corporation

发明人： CHUDZIK, Michael, P. ,  DORIS, Bruce, B. ,  HENSON, William, K. ,  YAN, Hongwen ,  ZHANG, Ying

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/84 ,  H01L29/04 ,  H01L21/8238

CPC分类号： H01L29/045 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/84

公开(公告)号：EP2618366A2

公开(公告)日：2013-07-24

申请号：EP13152161.9

申请日：2013-01-22

申请人： Tokyo Electron Limited

发明人： Nishimura, Eiichi ,  Kotsugi, Tadashi ,  Yamashita, Fumiko

IPC分类号： H01L21/033 ,  H01L21/311

CPC分类号： H01L21/67069 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/31138

摘要： An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled includes introducing a gas into a processing chamber; setting a frequency of a high frequency power supply such that a great amount of ion energy is distributed within a range smaller than ion energy for generating an etching yield of the first polymer and equal to or larger than ion energy for generating an etching yield of the second polymer, and supplying the high frequency power into the processing chamber from the high frequency power supply; generating plasma from the gas introduced in the processing chamber by applying the high frequency power; and etching the periodic pattern on a processing target object mounted on a susceptor 16 by using the generated plasma.

摘要翻译： 蚀刻通过自组装能够自组装的嵌段共聚物的第一聚合物和第二聚合物形成的周期性图案的蚀刻方法包括将气体引入处理室; 设定高频电源的频率，使得大量的离子能量分布在小于离子能量的范围内，用于产生第一聚合物的蚀刻产量等于或大于用于产生第一聚合物的蚀刻产量的离子能量 第二聚合物，并从高频电源将高频电力供应到处理室; 通过施加高频功率从引入处理室的气体产生等离子体; 以及通过使用所产生的等离子体在安装在基座16上的处理目标物体上蚀刻周期性图案。

公开(公告)号：EP1796153B1

公开(公告)日：2013-06-26

申请号：EP04806990.0

申请日：2004-12-14

申请人： Shibaura Mechatronics Corporation

发明人： YAMAZAKI, Katsuhiro SHIBAURA MECHATRONICS CORP.

IPC分类号： H01L21/311 ,  G03F7/42

CPC分类号： H01L21/31138 ,  G03F7/427

公开(公告)号：EP2599819A1

公开(公告)日：2013-06-05

申请号：EP12007830.8

申请日：2012-11-20

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Ogihara, Tsutomu ,  Ueda, Takafumi ,  Yagihashi, Fujio

IPC分类号： C08G77/56 ,  C08L83/14 ,  C09D183/14 ,  H01L21/033

CPC分类号： C08G77/56 ,  C08L83/14 ,  C09D183/14 ,  G03F7/0752 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138

摘要： The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development.

        R 1 m0 B(OH) m1 (OR) (3-m0-m1)      (1)

        R 10 m10 R 11 m11 R 12 m12 Si(OR 13 ) (4-m10-m11-m12)      (2)

摘要翻译： 本发明是一种含硅抗蚀剂下层膜形成用组合物，其含有缩合产物和水解缩合物中的至少任一种或两种以上的混合物，所述混合物包含：一种或多种选自以下的化合物（A）： （1）所示的有机硼化合物及其缩合物与下述通式（2）所示的1种以上的硅化合物（B）的混合物。 由此，可以提供不仅可以应用于由通过负显影获得的亲水性有机化合物形成的抗蚀剂图案的抗蚀剂下层膜，还可以提供由通过常规正显影获得的疏水性化合物形成的抗蚀剂图案。 （1）R10m10R11m11R12m12Si（OR13）（4-m10-m11-m12）（2）R1m0B（OH）m1（OR）（3-m0-

公开(公告)号：EP1880414B1

公开(公告)日：2012-12-19

申请号：EP06752442.1

申请日：2006-05-08

申请人： LAM RESEARCH CORPORATION

发明人： ZHU, Helen ,  SADJADI, Reza

IPC分类号： H01L21/02 ,  H01L21/311 ,  G03F7/42

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/02063

公开(公告)号：EP2479783A2

公开(公告)日：2012-07-25

申请号：EP12159427.9

申请日：2005-06-21

申请人： Tokyo Electron Limited

发明人： Koshiishi, Akira ,  Ooya, Yoshinobu ,  Iwata, Manabu ,  Yano, Daisuke ,  Yamazawa, Yohei ,  Hanaoka, Hidetoshi ,  Hayami, Toshihiro ,  Yamazaki, Hiroki ,  Sato, Manabu ,  Sugimoto, Masaru ,  Hinata, Kunihiko ,  Kobayashi, Noriyuki ,  Koshimizu, Chishio ,  Ohtani, Ryuji ,  Kibi, Kazuo ,  Saito, Masashi ,  Matsumoto, Naoki

IPC分类号： H01L21/3065 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J2237/3342 ,  H01L21/31138

摘要： A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.

公开(公告)号：EP2397901A1

公开(公告)日：2011-12-21

申请号：EP11178785.9

申请日：2002-08-12

申请人： Fujitsu Limited

发明人： Nozaki, Koji ,  Kozawa, Miwa ,  Namiki, Takahisa ,  Kon, Junichi ,  Yano, Ei

IPC分类号： G03F7/00 ,  G03F7/40 ,  H01L21/027

CPC分类号： H01L27/11526 ,  G03F7/0048 ,  G03F7/095 ,  G03F7/40 ,  H01L21/31138 ,  H01L27/105 ,  H01L27/11543

摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

摘要翻译： 为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含 树脂和交联剂以及选自醇基，链状或环状酯类，酮类，链状或环状醚类有机溶剂的非离子界面活性剂和有机溶剂中的任一种。

公开(公告)号：EP2396703A1

公开(公告)日：2011-12-21

申请号：EP09785860.9

申请日：2009-03-30

申请人： AZ Electronic Materials USA Corp.

发明人： ABDALLAH, David, J. ,  DAMMEL, Ralph, R. ,  TAKANO, Yusuke ,  LI, Jin ,  KUROSAWA, Kazunori

IPC分类号： G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3213

CPC分类号： G03F7/40 ,  H01L21/02123 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/3125 ,  Y10T428/24802

摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

公开(公告)号：EP2085823A4

公开(公告)日：2011-05-25

申请号：EP07829709

申请日：2007-10-12

申请人： NISSAN CHEMICAL IND LTD

发明人： TAKEI SATOSHI ,  NAKAJIMA MAKOTO ,  SAKAIDA YASUSHI ,  IMAMURA HIKARU ,  HASHIMOTO KEISUKE ,  KISHIOKA TAKAHIRO

IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3205

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144

公开(公告)号：EP2272086A2

公开(公告)日：2011-01-12

申请号：EP09762952.1

申请日：2009-02-24

申请人： Lam Research Corporation

发明人： YUN, Seokmin ,  ZHU, Ji ,  DELARIOS, John, M. ,  WILCOXSON, Mark

IPC分类号： H01L21/302 ,  H01L21/31

CPC分类号： H01L21/67051 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138

摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.