利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.01 秒)

    THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON
    1.
    发明公开
    THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON 审中-公开
    对于钛和硅光刻薄膜教育

    公开(公告)号：EP2735904A4

    公开(公告)日：2014-11-26

    申请号：EP12815272

    申请日：2012-07-20

    申请人： NISSAN CHEMICAL IND LTD

    发明人： NAKAJIMA MAKOTO ,  KANNO YUTA ,  TAKEDA SATOSHI ,  SAKAIDA YASUSHI ,  SHIGAKI SHUHEI

    IPC分类号： G03F7/09 ,  C08G79/00 ,  G03F7/11 ,  G03F7/40 ,  H01L21/027 ,  H01L21/311

    CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/40 ,  H01L21/31111 ,  H01L21/31138

    摘要： There is provided a thin film forming composition for forming resist underlayer film and the like which are used in the production of a semiconductor device, and a resist upper layer film which efficiently absorbs undesirable UV light with a thin film existing as an upper layer of the EUV resist before the undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. A thin film forming composition that is used together with a resist in a lithography process, comprising a mixture of a titanium compound (A) selected from a group consisting of a compound of Formula (1): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 0 a Ti(R 1 ) (4-a) €ƒ€ƒ€ƒ€ƒ€ƒFormula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B) of Formula (2): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 2 a' R 3 b Si(R 4 ) 4-(a'+b) €ƒ€ƒ€ƒ€ƒ€ƒFormula (2) a hydrolysis product of the mixture, or a hydrolysis-condensation product of the mixture, wherein the number of moles of a Ti atom is 50% to 90% relative to the number of total moles in terms of a Ti atom and a Si atom in the composition.

    UNDERLAYER FILM FORMING COMPOSITION FOR SELF-ASSEMBLED FILMS
    3.
    发明公开
    UNDERLAYER FILM FORMING COMPOSITION FOR SELF-ASSEMBLED FILMS 审中-公开
    下层膜形成用组合物自身建设FILMS

    公开(公告)号：EP2832807A4

    公开(公告)日：2015-10-21

    申请号：EP13769608

    申请日：2013-03-22

    申请人： NISSAN CHEMICAL IND LTD

    发明人： WAKAYAMA HIROYUKI ,  NAKAJIMA MAKOTO ,  SAKAMOTO RIKIMARU

    IPC分类号： C09D183/04 ,  B05D3/10 ,  C09D5/00 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

    CPC分类号： C09D183/04 ,  B05D1/005 ,  B05D3/0254 ,  C08G77/80 ,  C09D5/002 ,  G03F7/0002 ,  H01L21/0332

    摘要： There is a provided an underlayer film-forming composition which is used for an underlayer for a self-assembled film. An underlayer film-forming composition for self-assembled films, comprising a polysiloxane and a solvent. The polysiloxane may be a hydrolysis-condensation product of a silane containing a phenyl group-containing silane, or a hydrolysis-condensation product of a silane containing a silane of Formula (1) [R 2 Si(R 1 ) 3 (1)] wherein R 1 is an alkoxy group, an acyloxy group, or a halogen atom, and R 2 is an organic group containing a benzene ring optionally having a substituent and is a group bonded to the silicon atom through a Si-C bond, in a ratio of 10 to 100% by mol relative to the total silane, or a hydrolysis-condensation product of silanes containing the silane of Formula (1), a silane of Formula (2) [R 4 Si(R 3 ) 3 (2)], and a silane of Formula (3) [Si(R 5 ) 4 (3)] in a ratio of the silane of Formula (1):the silane of Formula (2):the silane of Formula (3) of 10 to 100:0 to 90:0 to 50 in terms of % by mol relative to the total silane:

    SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING CYCLIC AMINO GROUP
    4.
    发明公开
    SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING CYCLIC AMINO GROUP 审中-公开
    含硅RESIST下层膜组合物教育包含环状氨基

    公开(公告)号：EP2249204A4

    公开(公告)日：2012-01-11

    申请号：EP09712238

    申请日：2009-02-16

    申请人： NISSAN CHEMICAL IND LTD

    发明人： NAKAJIMA MAKOTO ,  SHIBAYAMA WATARU ,  KANNO YUTA

    IPC分类号： G03F7/11 ,  C08G77/26 ,  C08G77/388 ,  C08L83/08 ,  G03F7/075 ,  G03F7/26

    CPC分类号： G03F7/11 ,  C08G77/26 ,  C08G77/80 ,  C08L83/08 ,  G03F7/0752

    摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof as a silane, wherein a silane having a cyclic amino group is contained in an amount of less than 1% by mole, preferably 0.01 to 0.95% by mole. A film forming composition comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof The cyclic amino group may be a secondary amino group or a tertiary amino group. The hydrolyzable organosilane is a compound of Formula (1): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 1 a R 2 b Si(R 3 ) 4-(a+b) €ƒ€ƒ€ƒ€ƒ€ƒFormula (1) (where R 1 is a cyclic amino group or an organic group containing a cyclic amino group).

    ESTER-GROUP-CONTAINING COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM
    7.
    发明公开
    ESTER-GROUP-CONTAINING COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 审中-公开
    酯基团，包括成分FOR形成硅含有涂料的下层膜

    公开(公告)号：EP2916170A4

    公开(公告)日：2016-06-08

    申请号：EP13851241

    申请日：2013-10-24

    申请人： NISSAN CHEMICAL IND LTD

    发明人： KANNO YUTA ,  NAKAJIMA MAKOTO ,  TAKEDA SATOSHI ,  WAKAYAMA HIROYUKI

    IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033

    CPC分类号： G03F7/0757 ,  C08G77/14 ,  C08G77/26 ,  C08G77/28 ,  C08G77/80 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/3086 ,  H01L21/31133

    摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film usable as a hardmask. A resist underlayer film forming composition for lithography, comprising: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2), and a content of the hydrolyzable silane of Formula (1) or the hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in all silanes is less than 50% by mole, €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 1 a R 2 b Si(R 3 ) 4 -( a+b )€ƒ€ƒ€ƒ€ƒ€ƒFormula (1) [in Formula (1), R 1 is a monovalent organic group containing a group of Formula (1-1), Formula (1-2), Formula (1-3), Formula (1-4), or Formula (1-5): and a is an integer of 1, b is an integer of 0 or 1, and a + b is an integer of 1 or 2], €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 4 a1 R 5 b1 Si(R 6 ) 4-(a1+b1) €ƒ€ƒ€ƒ€ƒ€ƒFormula (2) [in Formula (2), R 4 is a monovalent organic group containing a group of Formula (2-1), Formula (2-2), or Formula (2-3): and a 1 is an integer of 1, b 1 is an integer of 0 or 1, and a 1 + b 1 is an integer of 1 or 2].

    SILICON-CONTAINING RESIST UNDERLAYER FILM FORMATION COMPOSITION HAVING ANION GROUP
    9.
    发明公开
    SILICON-CONTAINING RESIST UNDERLAYER FILM FORMATION COMPOSITION HAVING ANION GROUP 审中-公开
    形成用组合物含有硅RESIST下层膜WITH A阴离子基

    公开(公告)号：EP2372458A4

    公开(公告)日：2012-06-06

    申请号：EP09833458

    申请日：2009-12-16

    申请人： NISSAN CHEMICAL IND LTD

    发明人： SHIBAYAMA WATARU ,  NAKAJIMA MAKOTO ,  KANNO YUTA

    IPC分类号： G03F7/11 ,  C08G77/14 ,  C08G77/28 ,  G03F7/075 ,  G03F7/09 ,  G03F7/26

    CPC分类号： H01L21/3086 ,  C08L83/04 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11

    摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R 1 a R 2 Si(R 3 ) 4-(a+b) (1). A composition comprising a mixture of a hydrolyzable organosilane of Formula (1), and at least one organic silicon compound selected from the group consisting of a compound of Formula (2): R 4 a Si(R 5 ) 4-a (2) and a compound of Formula (3): [R 6 c Si(R 7 ) 3-c ] 2 Y b (3); a hydrolysis product of the mixture; or a hydrolysis-condensation product of the mixture.

    FILM-FORMING COMPOSITION CONTAINING CROSSLINKABLE REACTIVE SILICONE
    10.
    发明公开
    FILM-FORMING COMPOSITION CONTAINING CROSSLINKABLE REACTIVE SILICONE 审中-公开

    公开(公告)号：EP3222688A4

    公开(公告)日：2018-06-27

    申请号：EP15860187

    申请日：2015-11-09

    申请人： NISSAN CHEMICAL IND LTD

    发明人： NAKAJIMA MAKOTO ,  TAKASE KENJI ,  ENDO MASAHISA ,  WAKAYAMA HIROYUKI

    IPC分类号： C09D183/00 ,  C07F7/18 ,  C08G77/14 ,  G03F7/11 ,  H01L21/027

    CPC分类号： C07F7/1836 ,  C08G77/14 ,  C09D183/00 ,  G03F7/11 ,  H01L21/027

    摘要： There is provided film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. A film-forming composition comprising, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 1 a R 2 b Si(R 3 ) 4-(a+b) €ƒ€ƒ€ƒ€ƒ€ƒFormula (1) in Formula (1), R 1 is organic group of Formula (2) and is bonded to silicon atom through Si-C bond: Film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group consisting of hydrolyzable silane of Formula (3): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 7 c Si(R 8 ) 4-c €ƒ€ƒ€ƒ€ƒ€ƒFormula (3) and hydrolyzable silane of Formula (4): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ(R 9 d Si(R 10 ) 3-d ] 2 Y e €ƒ€ƒ€ƒ€ƒ€ƒFormula (4) Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.