公开(公告)号：EP3006529A4

公开(公告)日：2016-12-07

申请号：EP14807602

申请日：2014-06-09

Applicant: NISSAN CHEMICAL IND LTD

Inventor： HIROI YOSHIOMI ,  OTANI AYAKO ,  KISHIOKA TAKAHIRO ,  NISHINO TAITO ,  OZAWA TOMOYUKI

IPC: C12M3/00 ,  A61L31/00 ,  B05D7/24 ,  C08F230/02 ,  C09D133/14 ,  C09D133/26 ,  C09D143/02

CPC classification number: C09D133/14 ,  C08F230/02 ,  C08L43/02 ,  C08L101/02 ,  C09D5/16 ,  C09D143/02 ,  C09D201/02 ,  C12M23/20 ,  C08F220/34

Abstract: The present invention provides: a cell cultivation vessel characterized in that the surface is coated with a copolymer comprising repeating units having organic groups represented by formula (a) and repeating units having organic groups represented by formula (b); a manufacturing method therefor; and a cell aggregate-manufacturing method using same (in the formulas, U a1 , U a2 , U b1 , U b2 and U b3 as well as An - are as set forth in the Description and the Claims).

公开(公告)号：EP2302456A4

公开(公告)日：2012-01-04

申请号：EP09797841

申请日：2009-07-07

Applicant: NISSAN CHEMICAL IND LTD

Inventor： YUKAWA SHOJIRO ,  KISHIOKA TAKAHIRO ,  SAKAGUCHI TAKAHIRO ,  SODA HIROYUKI

IPC: G03F7/023 ,  C08F12/32 ,  G02B1/04 ,  G02B3/00 ,  G02F1/1333 ,  G03F7/004

CPC classification number: G03F7/0233 ,  C08F2/48 ,  C08F212/32 ,  C09D125/08 ,  G02B3/0012 ,  G03F7/094 ,  G03F7/40 ,  C08F220/06 ,  C08F212/08 ,  C08F212/14

公开(公告)号：EP2157614A4

公开(公告)日：2010-06-23

申请号：EP08776934

申请日：2008-05-28

Applicant: NISSAN CHEMICAL IND LTD

Inventor： MAEDA SHINICHI ,  KISHIOKA TAKAHIRO

IPC: C08G59/26 ,  C08G73/06 ,  H01L51/05

CPC classification number: H01L51/052 ,  C08G59/182 ,  C08G73/0638 ,  C08G73/0644 ,  C08G73/065 ,  C08G73/0655 ,  C08L79/04 ,  H01L21/312 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7869 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0529 ,  H01L51/102

Abstract: There is provided a novel gate insulating film forming meterial in consideration of not only initial electric properties immediately after the production of a gate insulating film, but also electric properties after other steps are performed while producing a thin-film transistor using the gate insulating film, and even reliability in the electric properties of the produced element. A gate insulating film forming agent for a thin-film transistor comprising an oligomer compound or a polymer compound, both of which contain a repeating unit having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent; a gate insulating film produced from the gate insulating film forming agent; a thin-film transistor having the gate insulating film; and a method for producing the gate insulating film or thin-film transistor.

公开(公告)号：EP1560070A4

公开(公告)日：2006-02-08

申请号：EP03751376

申请日：2003-10-08

Applicant: NISSAN CHEMICAL IND LTD

Inventor： KISHIOKA TAKAHIRO ,  MIZUSAWA KEN-ICHI ,  ENOMOTO TOMOYUKI ,  SAKAMOTO RIKIMARU ,  NAKAYAMA KEISUKE ,  KAWAMURA YASUO

IPC: G03F7/11 ,  C07D251/34 ,  G03F7/038 ,  G03F7/09 ,  H01L21/027

CPC classification number: H01L21/0276 ,  G03F7/038 ,  G03F7/091 ,  Y10S430/106

Abstract: A composition for forming an antireflection film, which comprises a compound, an oligomer or a polymer comprising a triazine-trione moiety having a hydroxyalkyl structure as a substitute on a nitrogen atom. The composition can provide an antireflection film which exhibits good absorptivity for a light having a wavelength suitable for use in the production of a semiconductor device, has high antireflection effect, and exhibits a dry etching rate greater than that of a photoresist layer.

Abstract translation: 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收光，其对光反射具有高保护效果，其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。

公开(公告)号：EP2472293A4

公开(公告)日：2014-07-30

申请号：EP10811596

申请日：2010-06-21

Applicant: NISSAN CHEMICAL IND LTD

Inventor： KISHIOKA TAKAHIRO ,  SAKAGUCHI TAKAHIRO

IPC: G02B1/04 ,  C08F22/40 ,  C08L35/00 ,  G02B3/00 ,  G03F7/004 ,  G03F7/023

CPC classification number: C08F26/06 ,  G02B1/043 ,  G03F7/0005 ,  G03F7/0233 ,  G03F7/40 ,  C08L33/24

公开(公告)号：EP1757986A4

公开(公告)日：2009-04-08

申请号：EP05728797

申请日：2005-04-06

Applicant: NISSAN CHEMICAL IND LTD

Inventor： KISHIOKA TAKAHIRO ,  SAKAMOTO RIKIMARU ,  HIROI YOSHIOMI ,  MARUYAMA DAISUKE

IPC: G03F7/11 ,  C08G61/12 ,  C08G73/06 ,  C08L79/04 ,  C09D163/00 ,  C09D179/04 ,  G02B1/11 ,  G03F7/09 ,  H01L21/027

CPC classification number: C08G73/0616 ,  C08G61/122 ,  C08G61/123 ,  C08G73/0638 ,  C08L79/04 ,  G02B1/111 ,  G03F7/091 ,  Y10S438/952

Abstract: [PROBLEMS] To provide an antireflection film that exhibits a high light reflection preventing effect, being free from intermixing with photoresists, and that can be employed in a lithography process using irradiation beam, such as those from ArF excimer laser and F2 excimer laser, and further to provide a composition for forming such an antireflection film. [MEANS FOR SOLVING PROBLEMS] There is provided an antireflection film forming composition characterized by containing a polymer having a pyrimidinetrione structure, imidazolidinedione structure, imidazolidinetrione structure or triazinetrione structure and containing a solvent.

Abstract translation: 本发明的目的在于提供一种抗光反射防止效果高，且不会与光致抗蚀剂混合的防反射膜，并且能够用于利用ArF准分子激光器和F2准分子激光器等的照射光的光刻工序中， 进一步提供用于形成这种抗反射膜的组合物。 [解决问题的手段]提供一种防反射膜形成用组合物，其特征在于，含有具有嘧啶三酮结构，咪唑烷二酮结构，咪唑烷三酮结构或三嗪三酮结构的聚合物，且含有溶剂。

公开(公告)号：EP1598703A4

公开(公告)日：2006-04-26

申请号：EP04713198

申请日：2004-02-20

Applicant: NISSAN CHEMICAL IND LTD

Inventor： TAKEI SATOSHI ,  ISHII KAZUHISA ,  KISHIOKA TAKAHIRO ,  SAKAIDA YASUSHI

IPC: G03F7/11 ,  C08L33/14 ,  G03F7/038 ,  G03F7/09 ,  H01L21/027

CPC classification number: G03F7/094 ,  G03F7/038 ,  Y10S430/109 ,  Y10S430/128

Abstract: A gap filler forming composition for lithography which is used in a dual damascene process for forming a gap filler having excellent planarization properties and filling properties is disclosed. Specifically, the gap filler forming composition is characterized by containing a polymer, a crosslinking agent, and a solvent and by being used in a semiconductor device production wherein a semiconductor substrate having a hole with an aspect ratio (height/diameter) of not less than 1 is covered with a photoresist and an image is transferred onto the semiconductor substrate by utilizing a lithography process.

公开(公告)号：EP1378796A4

公开(公告)日：2004-07-14

申请号：EP02717099

申请日：2002-04-10

Applicant: NISSAN CHEMICAL IND LTD

Inventor： KISHIOKA TAKAHIRO ,  ARASE SHINYA ,  MIZUSAWA KEN-ICHI

IPC: C08G18/79 ,  C08G73/06 ,  C09D179/04 ,  G03F7/09 ,  H01L21/027 ,  G03F7/11 ,  C09D5/00 ,  C09D201/02 ,  H01L21/302

CPC classification number: H01L21/0276 ,  C08G18/791 ,  C08G73/0655 ,  C09D179/04 ,  G03F7/091

Abstract: A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.

公开(公告)号：EP3106548A4

公开(公告)日：2017-10-25

申请号：EP15749372

申请日：2015-02-13

Applicant: NISSAN CHEMICAL IND LTD ,  UNIV KYOTO

Inventor： UMEZAKI MAKIKO ,  KISHIOKA TAKAHIRO ,  NISHINO TAITO ,  OTANI AYAKO ,  KAMEI KENICHIRO ,  LIU LI ,  CHEN YONG

IPC: D01F6/36 ,  A61L26/00 ,  C08L33/12 ,  C08L33/14 ,  C08L33/26 ,  D01D5/00 ,  D01F1/10 ,  D01F6/52 ,  D04H1/43 ,  D04H1/728

CPC classification number: C12N5/0068 ,  C08L33/06 ,  C08L33/12 ,  C08L33/14 ,  C08L2201/56 ,  C08L2203/12 ,  C12N2533/40 ,  C12N2537/00 ,  D01D5/003 ,  D01F1/10 ,  D01F6/36 ,  D01F6/52 ,  D04H1/4291 ,  D04H1/728 ,  D10B2509/00

Abstract: An object of the present invention is to provide a composition for producing a fiber, which is preferable for immobilizing substances effective for cell adhesion. proliferation.differentiation and the like, and retains organic solvent resistance, a fiber obtained by spinning the composition, and a cell culture scaffold material using the fiber. A composition for producing a fiber, containing (A) a polymer compound containing a unit structure represented by the formula (1) and a unit structure represented by the formula (2), (B) a crosslinking agent, (C) an acid compound, and (D) a solvent wherein each symbol in the formulas (1) and (2) is as described in the DESCRIPTION.

公开(公告)号：EP3085817A4

公开(公告)日：2017-08-02

申请号：EP14870890

申请日：2014-12-19

Applicant: NISSAN CHEMICAL IND LTD

Inventor： KISHIOKA TAKAHIRO ,  UMEZAKI MAKIKO ,  OTANI AYAKO

IPC: D01F6/76 ,  D01D5/04 ,  D04H1/4326 ,  D04H1/728

CPC classification number: D01F6/74 ,  D01D5/0007 ,  D01D5/003 ,  D01D5/084 ,  D01F6/76