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200 条记录 (耗时 0.013 秒)

    Process for treating metal surfaces
    16.
    发明公开
    Process for treating metal surfaces 有权
    Verfahren zur Behandlung vonMetalloberflächen

    公开(公告)号：EP0984672A3

    公开(公告)日：2001-08-08

    申请号：EP99303256.4

    申请日：1999-04-27

    申请人： MacDermid, Incorporated

    发明人： Ferrier, Donald ,  Durso, Frank

    IPC分类号： H05K3/38

    CPC分类号： C23C22/52 ,  C23F1/18 ,  H05K3/383 ,  H05K3/4611 ,  H05K2203/0793 ,  H05K2203/0796 ,  H05K2203/124

    摘要： A process for treating metal surfaces that includes first contacting the metal surface with a particular acidic peroxide adhesion promoting composition, followed by contacting that metal surface with an alkaline solution. This treatment is particularly suitable for treating metal surfaces used in printed circuit multilayer construction.

    摘要翻译： 一种处理金属表面的方法，其包括首先使金属表面与特定的酸性过氧化物粘附促进组合物接触，然后使该金属表面与碱性溶液接触。 该处理特别适用于处理印刷电路多层结构中使用的金属表面。

    A method for forming a resist pattern
    19.
    发明公开
    A method for forming a resist pattern 失效
    形成电阻图案的方法

    公开(公告)号：EP0409543A3

    公开(公告)日：1992-09-09

    申请号：EP90307772.5

    申请日：1990-07-16

    申请人： NIPPON PAINT CO., LTD.

    发明人： Nishijima, Kanji ,  Shigeta, Junichi ,  Kurosaki, Yoshinobu

    IPC分类号： H05K3/06 ,  H05K3/00

    CPC分类号： H05K3/064 ,  H05K2203/0505 ,  H05K2203/0793

    摘要： In a method for forming a resist pattern comprising exposing a photosensitive material which is a laminate of an insulating base plate, an electric conductive coating and a positive working photo resist coating, through a positive mask of circuit pattern placed on said photo resist, to an actinic radiation, developing the photo resist with an aqueous alkaline solution, thereby removing the exposed area and forming an etching resist, subjecting said resist to an etching with an acidic etching solution to remove the exposed conductive coating and finally removing the resist still remained on the unexposed area of the photosensitive material, an improvement which is characterized in that after said development and prior to the etching operation, the unexposed resist is further exposed to an actinic radiation. The present method is useful for giving a printed circuit board with excellent circuit pattern having no slender lines due to undesired side etching.

    Method of etching polyimides and resulting passivation structures
    20.
    发明公开
    Method of etching polyimides and resulting passivation structures 失效
    消除聚酰胺和结果钝化结构的方法

    公开(公告)号：EP0394638A3

    公开(公告)日：1992-07-15

    申请号：EP90103546.9

    申请日：1990-02-23

    申请人： International Business Machines Corporation

    发明人： Kindl, Thomas E. ,  Rickerl, Paul G. ,  Russel, David J.

    IPC分类号： G03F7/40

    CPC分类号： H01L21/31133 ,  H05K3/002 ,  H05K3/108 ,  H05K3/388 ,  H05K3/4092 ,  H05K2201/0154 ,  H05K2201/0166 ,  H05K2203/0793

    摘要： A method of etching polyimide material having metal­lization patterned thereon in which an epoxy resin system not only provides the etch mask for etching the polyimide but also provides a resulting passivation structure overlying the metallization on the polyimide substrate. The polyimide having a desired metalliza­tion pattern thereon is coated with the epoxy based photoimageable material which has the properties of resisting concentrated KOH etching when the epoxy material is cured and also the property of adhering to the polyimide substrate and the metallized pattern after exposure to the KOH etch to provide a pas­sivation to the metallization. The process includes exposing the layer of photoimageable material to actinic radiation to selectively pattern the material, developing the patterned material to reveal the underlying polyimide to be etched, curing the re­maining material and etching the revealed polyimide material in concentrated KOH to remove the revealed polyimide. The remaining epoxy material is firmly adherent as a passivation layer for the metallization. Preferably the epoxy material consists essentially of from about 10% to about 80% by weight of a polyol resin which is a condensation product of epichloro­hydrin and bisphenol A having a molecular weight of between about 40,000 to 130,000, and between about 20% and 90% by weight of an epoxidized octafunctional bisphenol A formaldehyde novolak resin, having a molecular weight of between 4,000 to 10,000 and about 0.1 to about 15 parts by weight of resin of a cationic photoinitiator capable of initiating polymerization of the epoxidized resin system upon exposure to actinic radiation. The resin may optionally contain up to about 50% by weight of epoxidized di-glycidal ether of tetrabromo bisphenol A having a molecular weight of between about 600 and 2,500, if flame retardancy is required.