公开(公告)号：EP3823042A1

公开(公告)日：2021-05-19

申请号：EP19208590.0

申请日：2019-11-12

申请人： Imec VZW

发明人： Hiblot, Gaspard ,  Houshmand Sharifi, Shamin ,  Kljucar, Luka

IPC分类号： H01L29/872 ,  H01L27/22 ,  H01L29/16 ,  H01L29/24 ,  H01L21/329 ,  H01L21/34 ,  H01L29/06

摘要： The present invention presents a selector device for a memory array, and a method for forming the selector device. The selector device comprises a first electrode layer embedded in an oxide; a second electrode layer arranged above the first electrode layer and separated from the first electrode layer by the oxide; and a semiconductor material forming a semiconductor layer on the top surface of the second electrode layer, and extending through the second electrode layer and the oxide onto the top surface of the first electrode layer, wherein the semiconductor material contacts the first electrode layer and the second electrode layer. The selector device helps to solve the sneak path problem in the memory array it is inserted into.

公开(公告)号：EP3121840B1

公开(公告)日：2020-08-12

申请号：EP15882903.6

申请日：2015-10-09

申请人： BOE Technology Group Co., Ltd. ,  South China University of Technology

发明人： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L21/34 ,  H01L27/12 ,  H01L21/3213 ,  H01L21/324 ,  H01L29/10

公开(公告)号：EP3598479A1

公开(公告)日：2020-01-22

申请号：EP17900358.7

申请日：2017-04-10

申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

发明人： SHI, Longqiang

IPC分类号： H01L21/34 ,  H01L29/786 ,  H01L29/08

摘要： Provided are a thin-film transistor and method for manufacturing same, and a display panel. During an annealing process, an aluminum layer (21) is combined with oxygen ions in an amorphous oxide semiconductor layer (24) to form an Al 2 O 3 layer; the amorphous oxide semiconductor layer (24) losing oxygen ions causes defects to increase and a doping region on the semiconductor layer to form, that is, forming a source electrode contact region and a drain electrode contact region; at the same time, the amorphous oxide semiconductor layer (24) is blocked by an anti-oxidation layer, forming a trench region of the semiconductor layer. Hence, the manufacturing process is simplified, production efficiency is improved, and production costs are reduced.

公开(公告)号：EP3482420A1

公开(公告)日：2019-05-15

申请号：EP16880197.5

申请日：2016-07-08

申请人： BOE Technology Group Co., Ltd. ,  Chongqing Boe Optoelectronics Technology Co., Ltd.

发明人： CHUNG, Jaemoon ,  FAN, Chao ,  JIN, Dongzhen ,  CUI, Rongge

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/34

公开(公告)号：EP1285461A1

公开(公告)日：2003-02-26

申请号：EP01940623.0

申请日：2001-05-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： ASPAR, Bernard ,  LAGAHE, Chrystelle ,  RAYSSAC, Olivier ,  GHYSELEN, Bruno

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/78 ,  H01L21/34

CPC分类号： H01L21/76254 ,  H01L2221/68368

摘要： The invention concerns a substrate (1) embrittled by a zone of microcavities (4') delimiting a thin layer (5) with a surface (2) of the substrate (1), the microcavities (4') being entirely or partly empty of gaseous species. The invention also concerns a method for making such a substrate.

摘要翻译： 本发明涉及通过存在微腔区而被削弱的衬底（1），限定具有衬底（1）的一个面（2）的薄层（5）的微腔区（4'），一些 或已经从微腔（4'）中去除的所有气态物质。 本发明还涉及生产这种基材的方法。

公开(公告)号：EP0587417A3

公开(公告)日：1994-11-23

申请号：EP93307070.8

申请日：1993-09-08

申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  THE HOKKAIDO ELECTRIC POWER COMPANY INC.

发明人： Hamada, Kazuyuki, c/o Int. Superconductivity ,  Wakata, Mitsunobu, c/o Int. Superconductivity ,  Matsuura, Kiyotaka, c/o Int. Superconductivity ,  Sugii, Nobuyuki, c/o Int. Superconductivity ,  Kubo, Kohichi, c/o Int. Superconductivity ,  Yamauchi, Hisao, c/o Int. Superconductivity

IPC分类号： C30B1/02 ,  H01L21/34 ,  C04B35/58 ,  H01L39/12

CPC分类号： C04B35/58078 ,  C04B35/5805 ,  H01L29/26

摘要： Disclosed is a boride material for electronic elements, which is represented by a chemical formula of A 1-x E x B₁₂ (where A is Zr of Hf, E is Sc or Y, and 0.1 ≦ x ≦ 0.9) and the crystal system of which is a cubic one at a temperature not lower than its phase transition temperature and is a hexagonal one at a temperature not higher than its phase transition temperature. The boride material is prepared by mixing oxide powders or sulfate powders of the constitutive elements A and E and a boron powder followed by shaping the powder mixture and then sintering the shaped body.

公开(公告)号：EP0139990A3

公开(公告)日：1985-08-28

申请号：EP84110058

申请日：1984-08-23

申请人： International Business Machines Corporation

发明人： Gaind, Arun Kumar ,  Kulkarni, Subhash Balkrishna ,  Poponiak, Michael Robert

IPC分类号： H01L21/205 ,  H01L21/34

CPC分类号： H01L21/74 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  Y10S438/916

摘要： A reduced pressure epitaxial deposition method is disclosed to maximize performance and leakage limited yield of devices formed in the epitaxial layer. The method includes specified prebake and deposition conditions designed to minimize arsenic (buried subcollector) and boron (buried isolation) autodoping effects when pressures below one atmosphere are selected in accordance with the subcollector-to-isolation area ratio.

公开(公告)号：EP4285415A1

公开(公告)日：2023-12-06

申请号：EP21748827.9

申请日：2021-07-22

申请人： Huawei Technologies Co., Ltd.

发明人： SILVESTRI, Marco ,  CURATOLA, Gilberto

IPC分类号： H01L29/24 ,  H01L29/812 ,  H01L21/34 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78 ,  H01L29/872 ,  H01L31/00 ,  H01L21/8258 ,  H01L29/417

公开(公告)号：EP4246558A1

公开(公告)日：2023-09-20

申请号：EP22716119.7

申请日：2022-02-14

申请人： Instituto Superior Técnico

发明人： LORENZ, Katharina ,  ANTÓNIO BAPTISTA PERES, Marco ,  JORGE DA COSTA ALVES, Eduardo ,  MANUEL VARELAS DA ROCHA, Jorge

IPC分类号： H01L21/425 ,  H01L21/34 ,  C30B33/06

摘要： The present invention relates to a process for the production of membranes of submicrometric thickness and rolls of Ga 2 O 3 comprising the steps of: a) implanting ions in a monocrystal semiconductor of Ga 2 O 3 , with a cleavage plane parallel to the surface, at a temperature below 500°C, making an ion beam to strike, along a non-parallel direction to the referred cleavage plane, with an energy in the range of 10-4000 keV, a flux in the range of 1×10 12 -1×10 14 ions/cm 2 .s and a fluence in the range of 1×10 13 -1×10 16 ions/cm 2 , forming at least one roll; b) subjecting the at least one roll formed in step a) to a thermal treatment at a temperature equal to or greater than 500°C.

公开(公告)号：EP3783666A1

公开(公告)日：2021-02-24

申请号：EP20200067.5

申请日：2015-07-21

申请人： Flosfia Inc.

发明人： Hitora, Toshimi ,  Oda, Masaya ,  Takatsuka, Akio

IPC分类号： H01L29/78 ,  H01L29/808 ,  H01L29/778 ,  H01L29/739 ,  H01L29/812 ,  H01L29/772 ,  H01L29/872 ,  H01L29/24 ,  H01L29/04 ,  H01L21/34 ,  H01L21/20 ,  H01L27/098 ,  H01L33/26 ,  H01L21/02

摘要： A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 µm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.