Abstract:
A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4xn pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
Abstract:
A photosensor having a plurality of light sensitive pixels each of which comprises a light sensitive region and a plurality of storage regions for accumulating photocharge generated in the light sensitive region, a transfer gate for each storage region that is selectively electrifiable to transfer photocharge from the light sensitive region to the storage region, and an array of microlenses that for each storage region directs a different portion of light incident on the pixel to a region of the light sensitive region closer to the storage region than to other storage regions.
Abstract:
A solid-state imaging device (1) includes a substrate (11) and a photoelectric conversion region (13). The substrate has a charge accumulation region (12). The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent.
Abstract:
An image sensor, an imaging apparatus, and a method of manufacturing an image sensor with an improved heat dissipation effect. An image sensor (12) includes a first layer (18) having an imaging function, pixels being arranged in the first layer (18) in at least a first direction, and a second layer (19) joined to the first layer (18). The second layer (19) includes a first sublayer (26), and primary material regions including primary material and secondary material regions including secondary material are arranged alternately in the first direction in the first sublayer (26).
Abstract:
An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.
Abstract:
An image processing system includes at least two, complementary, angle sensitive pixel (ASP) structures, having a spatial frequency domain ASP output including a background output and a plurality of ASP response outputs, in response to an optical input; an ASP response output subtractor component, which functions to suppress the background output and perform a subtraction of at least two of the ASP response outputs; and a processing component that can process the subtracted spatial frequency domain ASP response outputs. An optical domain image processing method includes the steps of providing at least two, complementary, angle sensitive pixel (ASP) structures; obtaining a spatial frequency domain ASP output including a plurality of complementary ASP response outputs, in response to an optical input; performing a wavelet-like transform of the ASP response outputs in the optical domain prior to performing any operation in a digital domain; and obtaining a desired output of the optical input.
Abstract:
The invention concerns colour image sensors. In order to benefit both from good brightness resolution and a colorimetry that is not excessively degraded by the sensitivity of silicon to near infrared radiation, the invention proposes producing a pixel mosaic comprising colour pixels (R), (G), (B), coated with colour filters, distributed in the matrix, with white pixels (T) not coated with colour filters and distributed in the matrix. The colour pixels comprise photodiodes constituted differently to the photodiodes of the white pixels, the different constitution being such that the photodiodes of the colour pixels have a lower sensitivity to infrared radiation than the photodiodes of the white pixels.
Abstract:
Systems and methods for generating an X-ray image using a digital flat panel detector with a squircle shape are described. The flat panel X-ray detector contains a circuit board, a light imager electrically connected to the circuit board, and a scintillator coupled on the light imager. The detector has superellipse shape or a cornerless shape with a first substantially straight edge and a second substantially straight edge running substantially perpendicular to the first edge, wherein the first and second edges do not physically intersect with each other at 90 degrees. The flat panel detector with this shape can be used in an x-ray imaging system that uses the detector to detect x-rays and produce an x-ray image. With this shape, the active sensing area of the detector can be similar to those currently available with rectangular or square flat panel detectors, while using less material to create the detector.