PROCESS FOR PREPARING A ZINC COMPLEX IN SOLUTION
    46.
    发明公开
    PROCESS FOR PREPARING A ZINC COMPLEX IN SOLUTION 审中-公开
    方法锌络合物在溶液生产

    公开(公告)号:EP2563719A2

    公开(公告)日:2013-03-06

    申请号:EP11774513.3

    申请日:2011-04-27

    Applicant: BASF SE

    Abstract: The present invention provides a process for preparing a solution of electrically uncharged [(OH)
    x (NH
    3 )
    y Zn]
    z where x, y and z are each independently 0.01 to 10, comprising at least the steps of (A) contacting ZnO and/or Zn(OH)
    2 with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)
    x (NH
    3 )
    y Zn]
    z where x, y and z each independently 0.01 to 10 with a concentration c1, (B) removing some solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH)
    2 , (C) removing solid Zn(OH)
    2 from the suspension from step (B), and (D) contacting the Zn(OH)
    2 from step (C) with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)
    x (NH
    3 )
    y Zn]
    z where x, y and z are each independently 0.01 to 10 with the concentration c2, and to highly concentrated solutions of electrically uncharged [(OH)
    x (NH
    3 )
    y Zn]
    z where x, y and z are each independently 0.01 to 10, to a process for producing a layer comprising at least zinc oxide on a substrate, comprising at least the steps of (E) preparing a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 by the former process according to the invention, (F) applying the solution from step (E) to the substrate and (G) thermally treating the substrate from step (F) at a temperature of 20 to 450 °C in order to convert electrically uncharged [(OH)
    x (NH
    3 )
    y Zn]
    z where x, y and z are each independently 0.01 to 10 to zinc oxide.

    VERFAHREN ZUR HERSTELLUNG VON HALBLEITENDEN SCHICHTEN
    47.
    发明公开
    VERFAHREN ZUR HERSTELLUNG VON HALBLEITENDEN SCHICHTEN 审中-公开
    用于生产半导体层

    公开(公告)号:EP2425038A2

    公开(公告)日:2012-03-07

    申请号:EP10715825.5

    申请日:2010-04-26

    Applicant: BASF SE

    Abstract: The present invention relates to a method for producing a layer containing at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) producing a solution containing at least one precursor compound of the at least one metal oxide selected from the group of carboxylates from monocarboxylic, dicarbonic, or polycarboxylic acids with at least three carbon atoms or derivatives of monocarboxylic, dicarbonic, or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidins, amidrazones, carbamide derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and compounds thereof, in at least one solvent; (B) application of the solvent of step (A) on the substrate; and (C) thermal treatment of the substrate of step (B) at a temperature of 20 to 200 degrees Celsius, in order to transfer the at least one precursor compound in at least one semiconductive metal oxide. In the event that in step (A), electrically neutral [(OH)
    x (NH
    3 )
    y Zn]
    z with x, y, and z independently from one another 0.01 to 10, is used as precursor compound, said precursor compound is obtained by conversion of zinc oxide or zinc hydroxide with ammonia; a substrate, which is coated with at least one semiconductive metal oxide, obtainable by said method; the application of said substrate in electronic components; and a method for producing electronically neutral [(OH)
    x (NH
    3 )
    y Zn]
    z with x, y, and z independently from one another 0.01 to 10, by conversion of zinc oxide and/or zinc hydroxide with ammonia.

Patent Agency Ranking