公开(公告)号：EP2975011A1

公开(公告)日：2016-01-20

申请号：EP14765463.6

申请日：2014-03-10

申请人： Kuraray Noritake Dental Inc.

发明人： YAMADA, Yoshihisa ,  MATSUMOTO, Atsushi ,  ITO, Yoshihisa

IPC分类号： C04B35/48 ,  A61C13/083

CPC分类号： C04B35/49 ,  C04B35/486 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/5472 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/9653

摘要： When a cross-sectional area of each zirconia crystal grain is calculated in an image of a cross section of a zirconia sintered body; a converted crystal grain size of each zirconia crystal grain is calculated based on the cross-sectional area on the assumption that each zirconia crystal grain has a circular cross-sectional shape; the zirconia crystal grains are classified into a class of smaller than 0.4 µm, a class of from 0.4 µm to smaller than 0.7 µm, and a class of 0.76 µm or greater based on the converted crystal grain size; a total cross-sectional area of the zirconia crystal grains is calculated in each of the classes; and a rate of the cross-sectional area to a total cross-sectional area of all zirconia crystal grains whose cross-sectional area has been calculated is calculated in each class, the rate of the cross-sectional area of the zirconia crystal grains in the class of the converted crystal grain size of smaller than 0.4 µm ranges from 4% to 35%, the rate of the cross-sectional area of the zirconia crystal grains in the class of the converted crystal grain size of from 0.4 µm to smaller than 0.76 µm ranges from 24% to 57%, and the rate of the cross-sectional area of the zirconia crystal grains in the class of the converted crystal grain size of 0.76 µm or greater ranges from 16% to 62%.

摘要翻译： 当在氧化锆烧结体的横截面的图像中计算每个氧化锆晶粒的横截面面积时， 假定每个氧化锆晶粒具有圆形截面形状，基于截面面积计算每个氧化锆晶粒的转化晶粒大小; 基于转化的晶粒大小，氧化锆晶粒分为小于0.4μm的类别，从0.4μm到小于0.7μm的类别和0.76μm以上的类别; 计算每种类别中氧化锆晶粒的总横截面面积; 计算截面面积相对于计算出截面积的全部氧化锆结晶粒子的总截面积的比例，并求出各分级中的氧化锆结晶粒子的截面积的比例 小于0.4μm的转换晶粒尺寸的范围为4％至35％，氧化锆晶粒的横截面面积在转换后的晶粒尺寸范围内为0.4μm至小于0.76 μm的范围为24％〜57％，氧化锆晶粒的换算结晶粒径为0.76μm以上的范围的比例为16％〜62％。

公开(公告)号：EP2819128A4

公开(公告)日：2015-12-16

申请号：EP13751491

申请日：2013-02-20

申请人： TDK CORP

发明人： TAGUCHI HITOSHI

IPC分类号： C04B35/26 ,  C04B35/626 ,  H01F1/11 ,  H01F41/02

CPC分类号： H01F1/11 ,  C04B35/26 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3272 ,  C04B2235/3418 ,  C04B2235/442 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/602 ,  C04B2235/72 ,  C04B2235/767 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/788 ,  H02K1/02

摘要： Provided is a sintered ferrite magnet 10 that comprises Sr ferrite having a hexagonal crystal structure, wherein the total amount of Na and K is 0.004 to 0.31% by mass in terms of Na 2 O and K 2 O, an amount of Si is 0.3 to 0.94% by mass in terms of SiO 2 , and the following Expression (1) is satisfied. 1.3 ‰¤ Sr F + Ba + Ca + 2 �¢ Na + 2 �¢ K / Si ‰¤ 5.7 [In Expression (1), Sr F represents an amount of Sr, on a molar basis, other than Sr which constitutes the Sr ferrite, and Ba, Ca, Na, and K represent amounts of respective elements on a molar basis.]

摘要翻译： 提供一种烧结铁氧体磁体10，其包含具有六方晶体结构的Sr铁氧体，其中Na和K的总量以Na 2 O和K 2 O计为0.004至0.31质量％，Si的量为0.3至 以SiO 2换算为0.94质量％，满足下述式（1）。 1.3‰¤Sr F + Ba + Ca + 2 ¢Na + 2 ¢K / Si‰¤5.7 [表达式（1）中，Sr F表示除了构成 Sr铁氧体，Ba，Ca，Na和K表示摩尔的各元素的量。

公开(公告)号：EP2819129A4

公开(公告)日：2015-10-28

申请号：EP13751493

申请日：2013-02-20

申请人： TDK CORP

发明人： TAGUCHI HITOSHI

IPC分类号： C04B35/26 ,  C04B35/626 ,  H01F1/03 ,  H01F1/11 ,  H02K15/03

CPC分类号： H01F1/0315 ,  C04B35/26 ,  C04B35/6262 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/72 ,  C04B2235/728 ,  C04B2235/767 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/788 ,  C04B2235/80 ,  H01F1/11 ,  H02K1/02

摘要： Provided is a sintered ferrite magnet 10 that contains Sr ferrite having a hexagonal crystal structure, wherein the total amount of Na and K is 0.01 to 0.09% by mass in terms of Na 2 O and K 2 O, an amount of Si is 0.1 to 0.29% by mass in terms of SiO 2 , and the following Expression (1) is satisfied. [In Expression (1), Sr F represents an amount of Sr, on a molar basis, other than Sr which constitutes the Sr ferrite, and Ba, Ca, Na, and K represent amounts of respective elements on a molar basis.]

公开(公告)号：EP2683675A4

公开(公告)日：2015-04-29

申请号：EP12757872

申请日：2012-03-09

申请人： SAINT GOBAIN CERAMICS

发明人： CITTI OLIVIER ,  KAZMIERCZAK ANDREA

IPC分类号： C04B35/101 ,  C03B17/06 ,  C03C3/083 ,  C03C3/097 ,  C04B35/495

CPC分类号： C03B17/064 ,  C04B35/1015 ,  C04B35/111 ,  C04B35/62665 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3418 ,  C04B2235/3463 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6023 ,  C04B2235/6027 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/782 ,  C04B2235/783 ,  C04B2235/786 ,  C04B2235/788 ,  C04B2235/95 ,  Y02P40/57

摘要： A refractory object can include at least 10 wt % Al2O3. In an embodiment, the refractory object can further include a dopant including an oxide of a rare earth element, Ta, Nb, Hf, or any combination thereof. In another embodiment, the refractory object may have a property such that the averaged grain size does not increase more than 500% during sintering, an aspect ratio less than approximately 4.0, a creep rate less than approximately 1.0×10−5 μm/(μm×hr), or any combination thereof. In a particular embodiment, the refractory object can be in the form of a refractory block or a glass overflow forming block. The glass overflow forming block can be useful in forming an Al—Si—Mg glass sheet. In a particular embodiment, a layer including Mg—Al oxide can initially form along exposed surfaces of the glass overflow forming block when forming the Al—Si—Mg glass sheet.

摘要翻译： 难熔物体可以包括至少10重量％的Al 2 O 3。 在一个实施方案中，难熔物体还可以包括掺杂剂，其包括稀土元素的氧化物，Ta，Nb，Hf或其任何组合。 在另一个实施方案中，耐火物体可以具有这样的性质，使得平均粒度在烧结期间不增加超过500％，纵横比小于约4.0，蠕变速率小于约1.0×10-5μm/（μm ×hr），或其任何组合。 在特定实施例中，耐火物体可以是耐火块或玻璃溢流成形块的形式。 玻璃溢流成型块可用于形成Al-Si-Mg玻璃板。 在特定的实施方案中，当形成Al-Si-Mg玻璃板时，最初可以沿着玻璃溢流形成块的暴露表面形成包含Mg-Al氧化物的层。

公开(公告)号：EP2710615A2

公开(公告)日：2014-03-26

申请号：EP12737704.2

申请日：2012-05-16

申请人： Forschungszentrum Jülich Gmbh

发明人： PITHAN, Christian ,  KATSU, Hayoto ,  WASER, Rainer ,  DORNSEIFFER, Jürgen

IPC分类号： H01C7/02 ,  C04B35/46

CPC分类号： H01C7/025 ,  B82Y30/00 ,  C01G23/006 ,  C01P2002/54 ,  C01P2004/04 ,  C04B35/465 ,  C04B35/4682 ,  C04B35/47 ,  C04B35/49 ,  C04B35/491 ,  C04B35/62222 ,  C04B35/624 ,  C04B35/62615 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3294 ,  C04B2235/401 ,  C04B2235/441 ,  C04B2235/5454 ,  C04B2235/663 ,  C04B2235/666 ,  C04B2235/768 ,  C04B2235/782 ,  C04B2235/785

摘要： The invention relates to a method for producing a semiconductor ceramic material having a non-linear electrical resistance with a positive temperature coefficient, in which a precursor mass that comprises a donor-doped, ferroelectric material having a Perovskite structure and the general formula A
x B
y O
3 is sintered in a reduced atmosphere at temperatures of not more than 1200 °C. According to the invention, the sintered material has an average grain size in the sub-micrometer range. The sintered material is then reoxidized at its grain boundaries at temperatures of not more than 600 °C. The grain size of the precursor mass has an average primary grain size in the sub-micrometer range, preferably an average primary grain size of not more than 50 nm, more preferably of not more than 20 nm and even more preferably of not more than 10 nm. The semiconductor ceramic material produced by said method has also an average grain size in the sub-micrometer range, preferably in such a way that 80% of the grains are smaller than 800 nm, more preferably smaller than 300 nm and even more preferably smaller than 200 nm.

公开(公告)号：EP2623479A4

公开(公告)日：2014-03-12

申请号：EP11829212

申请日：2011-09-28

申请人： KYOCERA CORP

发明人： SHIKATA KUNIHIDE ,  KUSANO KAZUHIDE

IPC分类号： C04B35/111 ,  C04B35/46 ,  C04B35/486 ,  G02B5/02 ,  G02B5/08 ,  H01L33/48 ,  H01L33/60 ,  H01L33/64 ,  H05B33/02 ,  H05K1/03

CPC分类号： C04B35/111 ,  C04B35/46 ,  C04B35/486 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/5436 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/85 ,  C04B2235/9607 ,  C04B2235/9646 ,  G02B5/0242 ,  G02B5/0247 ,  G02B5/0284 ,  H01L33/486 ,  H01L33/60 ,  H01L33/641 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/02 ,  H05K1/0306 ,  H05K2201/10106 ,  Y10T428/268 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： There is provided a ceramics substrate for mounting a light-emitting element having high thermal conductivity which can achieve high reflectance and which can enhance heat dissipation performance to extend the lifetime of a light-emitting element. A ceramics substrate for mounting a light-emitting element includes a ceramic sintered body, the ceramic sintered body having a mounting section on which a light-emitting element is mounted, in a surface portion on a mounting section side of the ceramic sintered body, a ratio of crystal grains having a crystal grain size of 0.2 µm to 1.0 µm in equivalent circle diameter being in a range of 45% to 80%, a ratio of crystal gains having a crystal grain size of 2.0 µm to 6.0 µm in equivalent circle diameter being in a range of 5% to 15%, and a ratio of crystal grains having a crystal grain size of more than 6.0 µm in equivalent circle diameter being 2.7% or less. Therefore, the reflectance of the ceramics substrate for mounting a light-emitting element (1) can be improved, and a ceramics substrate for mounting a light-emitting element with high thermal conductivity can be produced.

公开(公告)号：EP2298712A1

公开(公告)日：2011-03-23

申请号：EP09794308.8

申请日：2009-06-23

申请人： JX Nippon Mining & Metals Corporation

发明人： SATOH Kazuyuki ,  KOIDO Yoshimasa

IPC分类号： C04B35/00 ,  C04B35/50 ,  C23C14/34

CPC分类号： C23C14/08 ,  C04B35/486 ,  C04B35/50 ,  C04B35/645 ,  C04B2235/3227 ,  C04B2235/3244 ,  C04B2235/442 ,  C04B2235/656 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/724 ,  C04B2235/726 ,  C04B2235/727 ,  C04B2235/77 ,  C04B2235/782 ,  C04B2235/786 ,  C04B2235/9684 ,  C04B2235/9692 ,  C23C14/3414

摘要： An oxide sintered compact composed of a composite oxide of lanthanum and hafnium, wherein the amount of hafnium contained in the sintered compact is equivalent or more relative to the lanthanum. A method of producing an oxide sintered compact of lanthanum and hafnium, wherein La 2 (CO 3 ) 3 powder and HfO 2 powder are used as raw material powder, blending and mixing are performed so that the composition molar ratio of Hf and La becomes 1 to 1.2, the mixed powder is thereafter heated and synthesized in the atmosphere, the synthesized material is subsequently pulverized to obtain powder, and the synthesized powder is thereafter hot pressed into a sintered compact. Since metal lanthanum rapidly bonds with oxygen and decays, and lanthanum oxide bonds with moisture and forms a hydroxide and changes into powder form, there is a problem in that long-term storage is difficult and a sputtering target cannot be used for a practical use. In light of these points, provided is a stable La-containing oxide sintered compact composed of oxides of lanthanum (La) and hafnium (Hf), and in particular provided is a La-containing oxide sputtering target that is suitable for forming a high-k gate insulating film.

摘要翻译： 镧和铪的复合氧化物构成的氧化物烧结体，worin包含在烧结体铪的量为当量以上相对于镧。 生产镧和铪的氧化物烧结体的，worin的La 2（CO 3）3粉末2和HfO 2粉末的一种方法被用作原料粉末，混合，混合象Hf组成的组合物的摩尔比进行和La变为1 到01.02，混合粉末进行加热，并合成在大气中，将该合成材料粉碎得到粉末后，将该粉末被合成进行热压而得到烧结体。 由于金属镧快速与氧键和衰减，并与水分氧化镧键，并形成氢氧化物而变为粉末状，有一个问题在没有长期储存是困难和溅射靶不能用于实际应用。 在光合成点，提供了一种提供镧（La）的和铪（Hf），并且特别是氧化物组成的稳定的含La的氧化物烧结体是含La氧化物溅射靶所做的是适于形成高 k栅绝缘膜。

公开(公告)号：EP1662521B1

公开(公告)日：2009-01-07

申请号：EP05025764.1

申请日：2005-11-25

申请人： KYOCERA CORPORATION

发明人： Iwasaki, Kenichi Kyocera Corporation ,  Fukuda, Daisuke Kyocera Corporation ,  Nishigaki, Masahiro Kyocera Corporation ,  Matsubara, Kiyoshi Kyocera Corporation ,  Kamigaki, Kousei Kyocera Corporation

IPC分类号： H01G4/12

CPC分类号： C04B35/4682 ,  B32B2311/22 ,  C04B35/49 ,  C04B35/62665 ,  C04B35/62805 ,  C04B35/6281 ,  C04B35/62815 ,  C04B35/6303 ,  C04B35/64 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/36 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/79 ,  C04B2235/85 ,  C04B2237/346 ,  C04B2237/405 ,  H01G4/1218 ,  H01G4/1227

公开(公告)号：EP1736456A1

公开(公告)日：2006-12-27

申请号：EP05710578.5

申请日：2005-02-23

申请人： TDK Corporation

发明人： Ito, Kazushige ,  Hara, Haruya ,  Iguchi, Toshihiro ,  Sato, Shigeki ,  Sato, Akira ,  Kojima, Takashi

IPC分类号： C04B35/46 ,  H01B3/12 ,  H01G4/12

CPC分类号： C04B35/4682 ,  B32B18/00 ,  B32B2311/22 ,  C04B35/64 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/3436 ,  C04B2235/3454 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/662 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2237/346 ,  C04B2237/40 ,  C04B2237/405 ,  C04B2237/704 ,  C04B2237/706 ,  H01B3/12 ,  H01G4/1227

摘要： To provide a multilayer ceramic capacitor which has capacitance-temperature characteristics satisfying the X8R characteristic specified by the EIA standard and has capacitance with an excellent long-term stability.
The object is achieved by a multilayer ceramic capacitor comprising a laminate including alternately stacked dielectric layers of a sintered compact composed of crystal particles of a dielectric porcelain composite and internal-electrode layers. The dielectric porcelain composite comprises a primary constituent containing barium titanate; a first accessory constituent composed of at least one of MgO, CaO, BaO, and SrO; a second accessory constituent containing silicon oxide as a major constituent; a third accessory constituent composed of at least one of V 2 O 5 , MoO 3 , and WO 3 ; a fourth accessory constituent composed of an oxide of R1 (wherein R1 is at least one of Sc, Er, Tm, Yb, and Lu); a fifth accessory constituent composed of CaZrO 3 or a combination of CaO and ZrO 2 ; and a sixth accessory constituent composed of an oxide of R2 (wherein R2 is at least one ofY, Dy, Ho, Tb, Gd, and Eu). In the case of 100 moles of barium titanate, there are 0.1 to 3 moles of the first accessory constituent, 2 to 10 moles of the second accessory constituent, 0.01 to 0.5 moles of the third accessory constituent, 0.5 to 7 moles of the fourth accessory constituent (wherein the number of moles of the fourth accessory constituent is that of R1 alone), more than 0 but not more than 5 moles of the fifth accessory constituent, and more than 0 but not more than 9 moles of the sixth accessory constituent. The crystal particles constituting the dielectric layers have an average particle diameter of not less than 0.2 µm and less than or equal to 0.55 µm.

摘要翻译： 提供具有满足EIA标准规定的X8R特性的电容 - 温度特性并且具有优异的长期稳定性的电容的多层陶瓷电容器。 该目的是通过一种多层陶瓷电容器来实现的，该电容器包括层压体，它包括由电介质陶瓷复合材料的晶体颗粒和内部电极层组成的烧结体的交替层叠电介质层。 介电瓷复合材料包含含钛酸钡的主要成分; 由MgO，CaO，BaO和SrO中的至少一种构成的第一辅助成分; 含有氧化硅作为主要成分的第二配料; 由V 2 O 5，MoO 3和WO 3中的至少一种构成的第三辅助成分; 由R1的氧化物（其中R1是Sc，Er，Tm，Yb和Lu中的至少一种）组成的第四辅助成分; 由CaZrO 3或CaO和ZrO 2的组合构成的第五附属成分; 和由R2的氧化物（其中R2是Y，Dy，Ho，Tb，Gd和Eu中的至少一种）构成的第六附属成分。 在100摩尔钛酸钡的情况下，第一辅助成分为0.1〜3摩尔，第二副成分为2〜10摩尔，第三副成分为0.01〜0.5摩尔，第四附属物为0.5〜7摩尔 构成（其中第四辅助成分的摩尔数为单独的R1的摩尔数），大于0但不超过5摩尔的第五附属成分，大于0但不大于9摩尔的第六附属成分。 构成电介质层的结晶粒子的平均粒径为0.2μm以上且小于等于0.55μm。