公开(公告)号：EP2623478A1

公开(公告)日：2013-08-07

申请号：EP11829123.6

申请日：2011-09-27

Applicant: Tosoh Corporation

Inventor： KURAMOCHI Hideto ,  MATSUMARU Keitaro ,  AKIIKE Ryo ,  UTSUMI Kentaro ,  SHIBUTAMI Tetsuo

IPC: C04B35/00 ,  C23C14/34 ,  H01B1/08 ,  H01B5/14 ,  H01B13/00

CPC classification number: C23C14/08 ,  C01G19/006 ,  C01P2002/34 ,  C01P2002/50 ,  C01P2004/62 ,  C01P2006/40 ,  C01P2006/60 ,  C04B35/01 ,  C04B35/457 ,  C04B35/62635 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/645 ,  C04B2235/3213 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/963 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/35 ,  H01B1/08 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

Abstract: The invention provides an oxide sintered compact 2 composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell. Sn / In + Sn + Sr = 0.01 - 0.11 Sr / In + Sn + Sr = 0.0005 - 0.004
[In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.]

Abstract translation: 本发明提供了对氧化物烧结体2的结晶相，其besteht一个红绿柱石型氧化物相和钙钛矿型氧化物相，或一个红绿柱石型氧化物相，所述具有结晶相铟，锡，锶和氧作为组成 的构成要素，以及铟，锡和满足公式锶内容（1）和（2）中的原子比，以及作为溅射靶的条款。 这里还提供了在氧化物透明导电膜形成用溅射靶，和一个太阳能电池。 的Sn /在+ SN + SR = 0时01分至0点11分的Sr /在+ SN + SR = 0.0005 - 0.004 [在式（1）和（2），铟，锡和Sr表示铟，锡和锶含量（原子％） 分别]

公开(公告)号：EP2463400A4

公开(公告)日：2013-07-10

申请号：EP10806297

申请日：2010-06-17

Applicant: SUMITOMO METAL MINING CO

Inventor： OSHIRO AZUSA

IPC: C23C14/24 ,  C01G15/00 ,  C04B35/01 ,  C04B35/626 ,  C23C14/08

CPC classification number: C04B35/01 ,  C01G15/00 ,  C01P2002/52 ,  C01P2004/03 ,  C04B35/6263 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/62695 ,  C04B2235/3229 ,  C04B2235/3286 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/77 ,  C04B2235/783 ,  C04B2235/786 ,  C23C14/086 ,  C23C14/24

公开(公告)号：EP2607516A2

公开(公告)日：2013-06-26

申请号：EP11818360.7

申请日：2011-08-12

Applicant: Korea University Research And Business Foundation

Inventor： HONG, MunPyo ,  LEE, You Jong ,  JANG, Yun-Sung ,  LEE, Jun Young

IPC: C23C14/20 ,  C23C14/56 ,  C23C16/54 ,  C23C14/34

CPC classification number: C23C16/44 ,  B05D1/62 ,  C23C14/086 ,  C23C14/22 ,  C23C14/225 ,  C23C14/3464 ,  C23C14/35 ,  C23C16/00 ,  C23C16/22 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3417 ,  H01J37/347 ,  H01J2237/332 ,  H01L51/5256

Abstract: A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

公开(公告)号：EP2601328A1

公开(公告)日：2013-06-12

申请号：EP11814171.2

申请日：2011-08-05

Applicant: Advanced Technology Materials Limited

Inventor： BALUCH, Dosten ,  KING, Charles, Edmund

IPC: C23C14/35 ,  C23C14/08

CPC classification number: C23C14/3414 ,  C04B35/457 ,  C04B35/6261 ,  C04B35/6263 ,  C04B2235/32 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/44 ,  C04B2235/446 ,  C04B2235/447 ,  C04B2235/5409 ,  C04B2235/6027 ,  C04B2235/606 ,  C04B2235/6585 ,  C04B2235/77 ,  C23C14/086

Abstract: A process for manufacturing indium tin oxide (ITO) sputtering targets is provided. The process includes: precipitating indium and tin hydroxides, calcining the hydroxides to produce granulated ITO powder, preparing an aqueous slurry of the ITO powder with additives such as special sintering aids, dispersing agent and binders, milling the slurry to obtain a slip, preparing compacted ITO green bodies by casting the slip using porous molds or drying the slip to yield granulated ITO powder and cold isostatic pressing the powder, and sintering the green body to yield ITO target of high density greater than 99% of theoretical.

公开(公告)号：EP1985725B1

公开(公告)日：2013-04-10

申请号：EP08104906.6

申请日：2004-07-29

Applicant: JX Nippon Mining & Metals Corporation

Inventor： Yahagi, Masataka ,  Takami, Hideo

IPC: C23C14/08 ,  C23C14/34 ,  G11B7/24 ,  G11B7/26 ,  C04B35/01 ,  C04B35/16 ,  C04B35/457

CPC classification number: G11B7/243 ,  C04B35/01 ,  C04B35/16 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3409 ,  C04B2235/3418 ,  C23C14/086 ,  C23C14/3414 ,  G11B7/2531 ,  G11B7/257 ,  G11B7/259 ,  G11B7/266 ,  G11B2007/25706 ,  G11B2007/25708

Abstract: A sputtering target formed from a material obtained by adding any one or both of SiO 2 and B 2 O 3 oxides to an In 2 O 3 -ZnO-SnO 2 system compound oxide having SnO 2 as its primary component. The present invention relates to a thin film for an optical information recording medium (especially used as a protective film) that has stable film amorphous nature, realizes high deposition speed, is superior in adhesiveness and mechanical properties with the recording layer, has a high transmission factor, and is composed with a non-sulfide system, whereby the deterioration of the adjacent reflective layer and recording layer can be suppressed. The present invention also relates to a manufacturing method of such a thin film, and a sputtering target for use therein. Accordingly, in addition to improving the performance of the optical information recording medium, the productivity can also be considerably improved.

公开(公告)号：EP2414890A4

公开(公告)日：2013-02-27

申请号：EP10764872

申请日：2010-03-31

Applicant: VIEW INC

Inventor： KOZLOWSKI MARK ,  KURMAN ERIC ,  WANG ZHONGCHUN ,  SCOBEY MIKE ,  DIXON JEREMY ,  PRADHAN ANSHU ,  ROZBICKI ROBERT

IPC: G02F1/15

CPC classification number: G02F1/1523 ,  B05D5/06 ,  B23K20/10 ,  C03C17/3417 ,  C03C2217/94 ,  C23C10/28 ,  C23C14/021 ,  C23C14/022 ,  C23C14/024 ,  C23C14/046 ,  C23C14/08 ,  C23C14/083 ,  C23C14/085 ,  C23C14/086 ,  C23C14/14 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/568 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/5853 ,  G02F1/15 ,  G02F1/153 ,  G02F1/1533 ,  G02F1/155

公开(公告)号：EP2518761A1

公开(公告)日：2012-10-31

申请号：EP12165705.0

申请日：2012-04-26

Applicant: Nitto Denko Corporation

Inventor： Nashiki, Tomotake ,  Sugawara, Hideo ,  Noguchi, Tomonori ,  Hamada, Akira ,  Ito, Yoshihisa ,  Ishibashi, Kuniaki

IPC: H01L21/67 ,  C23C14/08 ,  C23C14/56 ,  C23C28/00

CPC classification number: C23C14/568 ,  C23C14/086 ,  C23C14/562 ,  C23C28/32 ,  C23C28/321 ,  C23C28/345 ,  H01L21/67132 ,  H01L21/67173 ,  Y10T428/31678

Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.

Abstract translation: 公开了一种连续使细长衬底经受真空成膜的方法。 该方法包括以下步骤：从第一方向将第一辊室从第一室向第二辊室供给; 对第一衬底进行脱气; 在第二成膜室中在第一基板上形成第二材料的膜; 并卷起第二辊室中的第一基板，从而制造第一基板，并且还包括类似的步骤以产生第二基板。 在制造具有第二材料膜的第一基板之前，第一成膜室的第一阴极从第一成膜室移除，并且在用第一材料膜制造第二基板之前，第二阴极 从第二成膜室除去第二成膜室的电极。

公开(公告)号：EP2495224A1

公开(公告)日：2012-09-05

申请号：EP10826509.1

申请日：2010-10-13

Applicant: JX Nippon Mining & Metals Corporation

Inventor： IKISAWA Masakatsu ,  TAKAMI Hideo

IPC: C04B35/00 ,  C23C14/34 ,  H01B1/08 ,  H01B5/14

CPC classification number: H01B1/08 ,  C03C17/245 ,  C04B35/01 ,  C04B35/6261 ,  C04B35/62635 ,  C04B35/62695 ,  C04B2235/3251 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6567 ,  C04B2235/77 ,  C04B2235/9653 ,  C23C14/086 ,  C23C14/3414 ,  C23C30/00

Abstract: A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 mΩ•cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low.

Abstract translation: 一种包含铌作为添加剂的烧结氧化铟，其中铌原子数相对于烧结体中包含的所有金属元素的总原子数的比率在1〜4％的范围内，相对密度为98 ％以上，体积电阻为0.9μm以下。 提供了一种氧化铟系的烧结体和氧化铟系的透明导电膜，其具有在短波长和长波长范围内具有高透射率的特性，因为即使电阻率低，载流子浓度也不会太高。

公开(公告)号：EP2022871B1

公开(公告)日：2012-08-22

申请号：EP08104904.1

申请日：2004-07-29

Applicant: JX Nippon Mining & Metals Corporation

Inventor： Takami, Hideo Nippon Mining & Metals Co. Ltd. ,  Yahagi, Masataka Nippon Mining & Metals Co. Ltd.

IPC: C23C14/08 ,  C23C14/34 ,  G11B7/24 ,  G11B7/26

CPC classification number: G11B7/243 ,  C04B35/01 ,  C04B35/16 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3409 ,  C04B2235/3418 ,  C23C14/086 ,  C23C14/3414 ,  G11B7/2531 ,  G11B7/257 ,  G11B7/259 ,  G11B7/266 ,  G11B2007/25706 ,  G11B2007/25708

Abstract: A sputtering target formed from a material obtained by adding any one or both of SiO 2 and B 2 O 3 oxides to an In 2 O 3 -ZnO-SnO 2 system compound oxide having SnO 2 as its primary component. The present invention relates to a thin film for an optical information recording medium (especially used as a protective film) that has stable film amorphous nature, realizes high deposition speed, is superior in adhesiveness and mechanical properties with the recording layer, has a high transmission factor, and is composed with a non-sulfide system, whereby the deterioration of the adjacent reflective layer and recording layer can be suppressed. The present invention also relates to a manufacturing method of such a thin film, and a sputtering target for use therein. Accordingly, in addition to improving the performance of the optical information recording medium, the productivity can also be considerably improved.

公开(公告)号：EP2471972A1

公开(公告)日：2012-07-04

申请号：EP12161406.9

申请日：2007-11-30

Applicant: Idemitsu Kosan Co., Ltd.

Inventor： Inoue, Kazuyoshi ,  Yano, Koki ,  Utsuno, Futoshi

IPC: C23C14/34 ,  C23C14/08 ,  C04B35/453 ,  C04B35/01 ,  C04B35/64 ,  C04B35/626

CPC classification number: H01J37/3429 ,  C01G15/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/6261 ,  C04B35/62625 ,  C04B35/62655 ,  C04B35/64 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/725 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414 ,  H01J2237/332 ,  H01L21/02565 ,  H01L21/02631

Abstract: A sputtering target comprising a compound shown by InGaZnO 4 as a main component, which further contains a metal element with an atomic valency of positive tetravalency or higher.

Abstract translation: 包含InGaZnO 4所示的化合物作为主要成分的溅射靶，其进一步含有原子价为正四价以上的金属元素。