公开(公告)号：EP2726643A1

公开(公告)日：2014-05-07

申请号：EP12725436.5

申请日：2012-06-04

申请人： Reinhausen Plasma GmbH

发明人： NETTESHEIM, Stefan ,  KORZEC, Dariusz

IPC分类号： C23C16/04 ,  C23C16/452 ,  C23C16/515 ,  H01J37/32

CPC分类号： H05H1/48 ,  C23C16/045 ,  C23C16/452 ,  C23C16/515 ,  H01J37/32357 ,  H01J37/32394

摘要： The invention relates to a device and a method for plasma treatment of hollow bodies. The invention is in particular suited for the protective plasma treatment of the inner surface of thermally sensitive hollow bodies such as plastic bottles. The plasma treatment according to the invention can, for example, consist of chemical activation, sterilization, cleaning or coating. One or more hollow bodies are put into a processing chamber for treatment. The processing chamber is in fluid connection with at least one plasma source. An exhaust device on the processing chamber generates a negative pressure in the processing chamber relative to the plasma source so that plasma can expand out of the plasma source into the processing chamber and hollow body.

公开(公告)号：EP2652169A1

公开(公告)日：2013-10-23

申请号：EP11831820.3

申请日：2011-12-15

申请人： KHS Corpoplast GmbH

发明人： ANDERSEN, Arne ,  HERBORT, Michael ,  SIEBELS, Sönke

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/30 ,  C23C16/511 ,  C23C16/515

CPC分类号： C23C16/511 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/30 ,  C23C16/515

摘要： The method serves for the plasma treatment of workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber top and a lateral chamber wall. The plasma treatment involves depositing a coating on the workpiece. The ignition of the plasma is performed by microwave energy. The coating consists at least of a gas barrier layer and a protective layer. The gas barrier layer contains SiOx and the protective layer contains carbon. The protective layer is produced from a gas that contains at least a silicon compound and argon.

公开(公告)号：EP2630273A1

公开(公告)日：2013-08-28

申请号：EP11788021.1

申请日：2011-09-01

申请人： KHS Corpoplast GmbH

发明人： SIEBELS, Sönke ,  KYTZIA, Sebastian

IPC分类号： C23C16/26 ,  C23C16/40 ,  C23C16/503 ,  C23C16/511 ,  C23C16/515 ,  C23C16/52 ,  B65D23/02 ,  C23C16/04 ,  C23C16/02

CPC分类号： C23C16/511 ,  C23C16/029 ,  C23C16/045 ,  C23C16/047 ,  C23C16/401 ,  C23C16/503 ,  C23C16/515 ,  C23C16/52

摘要： The method and the device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. A coating is deposited on the workpiece by means of the plasma treatment. The plasma is ignited by pulsed microwave energy. Switch-on phases and switch-off phases of a microwave input are specified by a controller. The relation between the duration of the switch-on phases and the duration of the switch-off phases is changed during the execution of the treatment process for a workpiece.

摘要翻译： 该方法和装置用于等离子体处理工件。 工件被插入可至​​少部分抽空的处理站的腔室中。 等离子体腔室由腔室底部，腔室盖和侧室壁限定。 通过等离子体处理将涂层沉积在工件上。 等离子体被脉冲微波能量点燃。 微波输入的接通和断开阶段由控制器指定。 在执行工件的处理过程中，接通阶段的持续时间和关闭阶段的持续时间之间的关系被改变。

公开(公告)号：EP1852522B1

公开(公告)日：2013-04-24

申请号：EP06713568.1

申请日：2006-02-07

申请人： Toyo Seikan Kaisha, Ltd.

发明人： INAGAKI, Hajime,Toyo Seikan Group Corp. Res. Dev. ,  IEKI, Toshihide,Toyo Seikan Group Corp. Res. Dev. ,  KITOU, Satoru,Toyo Seikan Kaisha, Ltd ,  NAKANO, Ryuta,Toyo Seikan Kaisha, Ltd ,  NAKAYAMA, Megumi,Toyo Seikan Kaisha, Ltd

IPC分类号： C23C16/44 ,  B65D1/00 ,  B65D23/02 ,  C23C16/40 ,  C23C16/50 ,  C23C16/02 ,  C23C16/515 ,  C23C16/04

CPC分类号： C23C16/401 ,  B05D1/62 ,  B05D2201/00 ,  B05D2490/50 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/515 ,  Y10T428/13 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/1321 ,  Y10T428/1355 ,  Y10T428/1359 ,  Y10T428/1383 ,  Y10T428/1393 ,  Y10T428/31678

公开(公告)号：EP2420582A2

公开(公告)日：2012-02-22

申请号：EP10764618.4

申请日：2010-04-12

申请人： Dawonsys Co., Ltd.

发明人： PARK, Sun Soon ,  LIU, Hyo Yol

IPC分类号： C21D1/09 ,  C21D1/42 ,  C21D9/46 ,  C21D10/00

CPC分类号： C21D10/005 ,  C21D1/09 ,  C21D1/42 ,  C21D9/46 ,  C23C16/515 ,  C23C16/545 ,  Y02P10/253

摘要： The present invention relates to an apparatus and a method for plasma surface treatment, more particularly, to an apparatus and a method for treating a surface of a conductive object with ions from plasma. According to the present invention, an apparatus for plasma surface treatment which treats a surface of a treatment portion of a conductive object using ions from plasma comprising: connecting means electrically connected to the treatment portion for applying negative voltage pulses to the treatment portion; a pulse voltage generating unit electrically connected to the connecting means; and magnetic cores disposed at the boundary of the treatment portion for preventing electric current caused by the negative voltage pulses applied to the treatment portion from flowing across the boundary of the treatment portion is provided. The apparatus and method for plasma surface treatment according to the present invention can confine the treatment portion by using negative high voltage pulses and magnetic cores. Also, the apparatus and method can apply negative high voltage pulse to the treatment portion of an electrically grounded object such as a metal sheet coil and a metal wire coil.

摘要翻译： 本发明涉及一种用于等离子体表面处理的装置和方法，更具体地涉及用等离子体离子处理导电物体的表面的装置和方法。 根据本发明，一种用于等离子体表面处理的装置，其使用来自等离子体的离子处理导电物体的处理部分的表面，包括：电连接到处理部分的连接装置，用于向处理部分施加负电压脉冲; 电连接到所述连接装置的脉冲电压产生单元; 并且设置在处理部分的边界处的用于防止由施加到处理部分的负电压脉冲引起的电流流过处理部分的边界的磁芯。 根据本发明的等离子体表面处理装置和方法可以通过使用负高压脉冲和磁芯来限制处理部分。 此外，该装置和方法可以将负高压脉冲施加到诸如金属片状线圈和金属线圈的电接地物体的处理部分。

公开(公告)号：EP2107593A3

公开(公告)日：2011-12-14

申请号：EP09250884.5

申请日：2009-03-27

申请人： NGK Insulators, Ltd.

发明人： Imaeda, Minoru ,  Imanishi, Yuichiro ,  Saito, Takao

IPC分类号： H01J37/32 ,  C23C14/40

CPC分类号： H01J37/32568 ,  C23C16/24 ,  C23C16/515 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/3244

摘要： In a silicon-based thin film depositing apparatus 10, a plurality of transparent electrodes 62 are disposed so as to face the corresponding counter electrodes 16 with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices 14a toward the supporting electrodes 18 and also injecting a barrier gas from barrier gas injection orifices 15a in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet 13, and thereby, the pressure in a chamber 12 is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode 16 to deposit a silicon-based thin film. In this method, a DC pulse voltage is applied to perform discharge as described above. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved. Furthermore, by injecting the barrier gas so as to surround the raw material gas, when a carrier gas is mixed with the raw material gas, the flow rate of the carrier gas can be decreased.

公开(公告)号：EP1561239B1

公开(公告)日：2011-04-27

申请号：EP03783399.3

申请日：2003-11-12

申请人： Micron Technology, Inc.

发明人： DOAN, Trung, Tri ,  BLALOCK, Guy, T. ,  SANDHU, Gurtej, S.

IPC分类号： H01L21/285

CPC分类号： H01L21/0228 ,  C23C16/38 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31683 ,  H01L21/76841

摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.

公开(公告)号：EP2284869A1

公开(公告)日：2011-02-16

申请号：EP09754576.8

申请日：2009-05-14

申请人： Mitsubishi Electric Corporation

发明人： TSUDA, Mutsumi ,  TAKI, Masakazu

IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/455 ,  H01L31/04

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： Included are a vacuum chamber 10 having a substrate stage 12 that holds a substrate 100 and a plasma electrode 13 that is provided so as to face the substrate 100, a H 2 gas supply unit that supplies a H 2 gas to the vacuum chamber 10 at a constant flow rate during deposition, a SiH 4 gas supply unit that opens or closes a gas valve 25 to turn on or off the supply of a SiH 4 gas to the vacuum chamber 10 during deposition, a high-frequency power source 40 that applies a high frequency voltage to the plasma electrode 13, a shield box 20 that is connected to the ground so as to surround the plasma electrode 13 outside the vacuum chamber 10, and a control unit 60 that controls the opening or closing of the gas valve 25 such that the SiH 4 gas is periodically supplied to the vacuum chamber 10 and modulates the amplitude of high frequency power supplied to the plasma electrode 13 in synchronization with the opening or closing of the gas valve 25, and the gas valve 25 is provided in the shield box 20.

摘要翻译： 包括具有保持基板100的基板台12和与基板100相对地设置的等离子体电极13的真空室10，H 2气体供给单元，其向真空室10供给H 2气体 在沉积期间恒定的流速，SiH 4气体供应单元，其在沉积期间打开或关闭气体阀25以接通或关闭向真空室10供应SiH 4气体;应用高频电源40 向等离子体电极13施加的高频电压，与真空室10外的等离子体电极13连接的接地的屏蔽箱20以及控制气体阀25的开闭的控制部60 使得SiH 4气体周期性地供给到真空室10，并且与气体阀25的打开或关闭同步地调制供给到等离子体电极13的高频功率的振幅，并且气体阀25设置在 臂章 d框20。

公开(公告)号：EP2229466A1

公开(公告)日：2010-09-22

申请号：EP08860425.1

申请日：2008-12-12

申请人： Plasmatrix Materials AB

发明人： NICOLESCU, Mihai ,  HJALMARSSON, Äke ,  KOUZNETSOV, Klim

IPC分类号： C23C16/515 ,  C23C16/44 ,  C23C16/52 ,  H01J37/32

CPC分类号： H01J37/32174 ,  C23C14/22 ,  C23C14/3485 ,  C23C16/44 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32559 ,  H01J37/3467 ,  H01J2237/3321

摘要： In plasma activated chemical vapour deposition a plasma decomposition unit (1) is used that is arranged in or connected to a vacuum vessel having a relatively low pressure or vacuum, to which an operating gas is provided. Periodically- repeated voltage pulses are applied between the anode (15a: 15b) and the cathode (7) of the plasma decomposition unit in such a manner that pulsed electric discharges are produced between the cathode and the surrounding anode of the plasma decomposition unit. The anode is arranged in a special way so that at least a portion thereof will obtain only an electrically conductive coating or substantially no coating when operating the unit. For that purpose, the anode includes a portion (15a) located in the direct vicinity of the free surface (5) of the cathode. The portion is a flange or edge portion which is located or extends over margins of the free surface of the cathode. In that way, the anode will include a portion (17) that is shielded for direct coating with particles from the plasma formed and that hence will obtain e.g. substantially no dielectric coating at all.

公开(公告)号：EP2122006A2

公开(公告)日：2009-11-25

申请号：EP08709622.8

申请日：2008-02-15

申请人： Diamond Hard Surfaces Ltd

发明人： SERGEY ALEKSANDROV, Sergey

IPC分类号： C23C16/503 ,  C23C16/515 ,  C23C16/26 ,  C23C16/02 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34

CPC分类号： C23C16/515 ,  C23C14/351 ,  C23C14/564 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/503 ,  H01J37/3408 ,  H01J37/3438

摘要： An apparatus for depositing a coating onto a surface of a substrate comprising: -a vacuum chamber (5) with an inlet (2) for supplying a precursor gas to the chamber, the chamber comprising, -a carrier (6) for locating the substrate (8) in the chamber, the substrate, when located in the carrier constituting a first cathode; -a first anode (3) having an aperture in which a plasma can be formed, and -a magnetic field source, wherein, in use, a substantially linear magnetic field between the anode and the cathode is formed such that the direction of the magnetic field is substantially orthogonal to the surface to be coated and plasma production and deposition takes place substantially within the linear field.

摘要翻译： 本发明是一种将涂层沉积在基材上的装置和方法。 该装置包括具有用于向腔室供应前体气体的入口的真空室。 腔室包括用于将衬底定位在腔室中的载体，具有可形成等离子体的孔的第一阳极和磁场源。 当衬底位于载体中时，构成第一阴极。 当形成阳极和阴极之间的基本上线性的磁场时，磁场的方向基本上与待涂覆的表面正交，等离子体的产生和沉积基本上在线性磁场内发生。