公开(公告)号：EP2811816A4

公开(公告)日：2015-11-25

申请号：EP13744063

申请日：2013-02-04

申请人： AMOSENSE CO LTD

发明人： JANG KIL JAE ,  LEE DONG HOON ,  LEE DONG KUN

IPC分类号： H05K9/00 ,  B32B7/12 ,  B32B27/08 ,  B32B27/28 ,  B32B27/32 ,  B32B27/36 ,  B32B37/12 ,  B32B38/00 ,  B82Y25/00 ,  C21D6/00 ,  G06F1/16 ,  G06F1/18 ,  H01F10/08 ,  H01F10/13 ,  H01F10/14 ,  H01F10/187 ,  H01F27/36 ,  H01Q1/52 ,  H04B1/38

CPC分类号： G06F1/182 ,  B82Y25/00 ,  G06F1/1684 ,  H01F10/08 ,  H05K9/0075 ,  Y10S977/838

摘要： Provided are a magnetic field shield sheet for a digitizer, which blocks an effect of a magnetic field generated from various components of a main body of the portable terminal device and at the same time improves the sensitivity of an electronic pen when a digitizer feature is implemented in the portable terminal device, while minimizing an influence upon a geomagnetic sensor, a method of manufacturing the magnetic field shield sheet, and a portable terminal device using the magnetic field shield sheet. The magnetic field shield sheet includes: at least one layer thin magnetic sheet made of a nanocrystalline alloy and flake-treated so as to be separated into a plurality of fine pieces; a protective film that is adhered on one surface of the thin magnetic sheet via a first adhesive layer provided on one side of the protective film; and a double-sided tape that is adhered on the other surface of the thin magnetic sheet via a second adhesive layer provided on one side of the double-sided adhesive tape, wherein the thin magnetic sheet is obtained by heat treating an amorphous ribbon made of the nanocrystalline alloy at a temperature of 300°C to 700°C.

公开(公告)号：EP2808869A3

公开(公告)日：2014-12-17

申请号：EP14175160.2

申请日：2002-08-29

申请人： Lambeth Magnetic Structures, LLC

发明人： Lambeth, David N.

IPC分类号： G11B5/64 ,  G11B5/66 ,  G11B5/667 ,  G11B5/673 ,  B82Y40/00 ,  C23C14/22 ,  B82Y10/00 ,  B82Y25/00 ,  C23C14/35 ,  C30B23/02 ,  C30B29/52 ,  G11B5/39 ,  G11B5/73 ,  G11B5/851 ,  H01F10/28 ,  H01F10/32 ,  H01F41/30 ,  G11B5/31 ,  H01F10/08

CPC分类号： C23C14/225 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/228 ,  C23C14/35 ,  C30B23/02 ,  C30B29/52 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/66 ,  G11B5/667 ,  G11B5/7325 ,  G11B5/851 ,  H01F10/08 ,  H01F10/28 ,  H01F41/303

摘要： A magnetic material structure comprising a substrate; at least one (110) textured bcc-d layer which is magnetic, forming a uniaxial symmetry broken structure, and having a magnetocrystaline anisotropy energy density constant K 1 > 0 or K 1

摘要翻译： 一种磁性材料结构，包括基底; 至少一个（110）纹理的bcc-d层，其是磁性的，形成单轴对称断裂结构，并且具有磁性各向异性能量密度常数K 1> 0或K 1 <0; 提供设置在所述基底和所述bcc层之间的（111）纹理六边形原子模板的至少一层; 其中所述六方晶原子模板由fcc-d或hcp结晶材料形成并且紧密堆积。

公开(公告)号：EP1450378A3

公开(公告)日：2006-07-05

申请号：EP04003840.8

申请日：2004-02-20

申请人： TDK Corporation

发明人： Hashimoto, Yasuo, c/o TDK Corporation ,  Wakayama, Katsuhiko, c/o TDK Corporation ,  Kakinuma, Akira, c/o TDK Corporation ,  Tasaki, Kazunori, c/o TDK Corporation ,  Iijima, Yasushi, c/o TDK Corporation ,  Chou, Tsutomu , c/o TDK Corporation

IPC分类号： H01F10/08 ,  H01F10/32 ,  H05K9/00 ,  H01F41/26

CPC分类号： H05K9/0088 ,  B82Y25/00 ,  H01F10/3222 ,  H01F41/26 ,  Y10T428/325

摘要： There is provided a soft magnetic member comprising a resin film, a metal sublayer (3) formed on the resin film and a soft magnetic metal layer (4a) formed on the metal sublayer (3). In the soft magnetic metal layer (4a), on the side of the metal sublayer (3), there is formed a region (4a1) having a higher Fe concentration and a higher saturation flux density than other regions.

摘要翻译： 本发明提供一种软磁性构件，其包括树脂片，形成在金属子层形成在树脂膜和软磁性金属层（4a）的一个金属子层（3）（3）。 在金属子层（3）的侧上的软磁性金属层（4a）中，形成有区域（4A1），其具有更高的Fe浓度比其他区域更高的饱和磁通密度。

公开(公告)号：EP0902445B1

公开(公告)日：2004-06-02

申请号：EP98307030.1

申请日：1998-09-02

申请人： Matsushita Electric Industrial Co., Ltd.

发明人： Hiramoto, Masayoshi ,  Sakakima, Hiroshi ,  Matsukawa, Nozomu

IPC分类号： H01F10/00 ,  H01F10/08 ,  G11B5/187 ,  H01F10/30 ,  G11B5/31

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/147 ,  G11B5/1878 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3967 ,  H01F10/00 ,  H01F10/265 ,  H01F10/30 ,  H01F41/18 ,  Y10S428/90 ,  Y10T428/115

公开(公告)号：EP0814519B1

公开(公告)日：2004-01-21

申请号：EP97109660.7

申请日：1997-06-13

申请人： SHARP KABUSHIKI KAISHA

发明人： Deguchi, Haruhiko ,  Nakabayashi, Takaya ,  Komoda, Tomohisa ,  Kira, Tohru ,  Fujita, Noboru ,  Uneyama, Kazuhiro

IPC分类号： H01L43/08 ,  H01F10/08 ,  G11B5/39 ,  H01L43/10

CPC分类号： B82Y25/00 ,  G11B5/3906 ,  H01F10/3268 ,  H01L43/08

公开(公告)号：EP1105890B1

公开(公告)日：2002-12-18

申请号：EP99950494.7

申请日：1999-08-02

申请人： Infineon Technologies AG

发明人： SCHWARZL, Siegfried

IPC分类号： H01F10/08 ,  H01L43/08 ,  G11C11/15 ,  G11C11/155 ,  G11C11/16

CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/3281 ,  H01L43/08

摘要： According to the invention, a magnetoresistive element has a first ferromagnetic layer element (11), a non-magnetic layer element (13) and a second ferromagnetic layer element (12) disposed in such a way that the non-magnetic layer element (13) is disposed between the first ferromagnetic layer element and the second ferromagnetic layer element (12). The first ferromagnetic layer element (11) and the second ferromagnetic layer element (12) are substantially made of the same material. They differ, however, in terms of their cross section parallel to the interface with the non-magnetic layer element (13) in that at least one of their dimensions has different sizes. The magnetoresistive element is particularly suitable both as sensor element and as storage element in a storage cell array.

摘要翻译： 根据本发明，磁阻元件具有第一铁磁层元件（11），非磁性层元件（13）和第二铁磁层元件（12），其以非磁性层元件（13） ）设置在第一铁磁层元件和第二铁磁层元件（12）之间。 第一铁磁层元件（11）和第二铁磁层元件（12）基本上由相同的材料制成。 然而，就它们与非磁性层元件（13）的界面平行的横截面而言，它们的区别在于它们的至少一个尺寸具有不同的尺寸。 磁阻元件特别适合作为传感器元件和存储单元阵列中的存储元件。

公开(公告)号：EP1052520A1

公开(公告)日：2000-11-15

申请号：EP99303615.1

申请日：1999-05-10

申请人： HITACHI EUROPE LIMITED

发明人： Tsukagoshi, Kazuhito ,  Alphenaar, Bruce W. ,  Mizuta, Hiroshi

IPC分类号： G01R33/09 ,  H01F10/08 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  H01F1/0072 ,  H01F10/324

摘要： A magnetoelectric device responsive to an applied magnetic field, e.g. for use as a reading head for data stored in magnetic storage media, comprises first and second ferromagnetic regions (3, 4) with a channel region (5) between them, the ferromagnetic regions being configured so that charge carriers with a particular spin polarisation which can pass through the first region, pass through the second region as a function of the relative orientations of magnetisation of the ferromagnetic regions produced by the applied magnetic field such that the device exhibits a conductivity as a function of the strength of the applied field. The channel region (5) includes a nanotube (6) which may be formed of carbon, configured to provide a quasi-one-dimensional channel to cause charge carriers which pass through the first ferromagnetic region to maintain their spin polarisation as they pass towards the second ferromagnetic region. In an alternative embodiment a deposited carbon layer (14) is used in the channel region.

摘要翻译： 响应于所施加的磁场的磁电装置，例如， 用作用于存储在磁存储介质中的数据的读取头，包括在它们之间具有通道区域（5）的第一和第二铁磁区域（3,4），所述铁磁区域被配置为使得具有特定自旋极化的电荷载流子 可以通过第一区域，作为由施加的磁场产生的铁磁区域的磁化的相对取向的函数，穿过第二区域，使得该器件显示作为施加场强度的函数的导电率。 通道区域（5）包括可以由碳形成的纳米管（6），其被配置为提供准一维通道，以引起通过第一铁磁区域的电荷载流子，以保持其自旋极化 第二铁磁区。 在替代实施例中，在沟道区域中使用沉积碳层（14）。

公开(公告)号：EP1046047A1

公开(公告)日：2000-10-25

申请号：EP99936399.7

申请日：1999-06-02

申请人： ROBERT BOSCH GMBH

发明人： MARX, Klaus ,  KITTEL, Hartmut ,  JOST, Franz ,  FREITAG, Martin

IPC分类号： G01R33/09 ,  H01L43/08 ,  H01F10/08

CPC分类号： G01D5/145 ,  B82Y25/00 ,  G01B7/30 ,  G01R33/093

摘要： The invention relates to a magnetoresistive sensor element, especially an angular sensor element, having a first magnetic layer (3) whose magnetization direction represents a reference direction, a second non magnetic layer (2) formed on the first layer (3) and a third magnetic layer (1) formed on the second layer (2), the magnetization direction of said third layer being influenced by an external magnetic field, wherein said sensor element comprises means (5) for selective orientation of magnetization direction of the first layer (3) in order to create different reference directions.

公开(公告)号：EP0490608B1

公开(公告)日：2000-03-08

申请号：EP91311417.9

申请日：1991-12-09

申请人： International Business Machines Corporation

发明人： Dieny, Bernard ,  Gurney, Bruce Alvin ,  Lambert, Steven Eugene ,  Mauri, Daniele ,  Parkin, Stuart Stephen Papworth ,  Speriosu, Virgil Simon ,  Wilhoit, Dennis Richard

IPC分类号： G01R33/06 ,  H01F10/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3903 ,  G11B2005/0018 ,  G11B2005/3996

公开(公告)号：EP0917161A1

公开(公告)日：1999-05-19

申请号：EP98121708.6

申请日：1998-11-13

申请人： Matsushita Electronics Corporation

发明人： Kawawake, Yasuhiro ,  Sakakima, Hiroshi ,  Satomi, Mitsuo ,  Sugita, Yasunari

IPC分类号： H01F10/08 ,  H01L43/10 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3919 ,  G11B5/3925 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3268 ,  H01L43/10

摘要： An exchange coupling film of the present invention includes a substrate and a multilayer film. The multilayer film includes: a ferromagnetic layer and a magnetization rotation suppressing layer provided adjacent to the ferromagnetic layer for suppressing a magnetization rotation of the ferromagnetic layer; and the magnetization rotation suppressing layer includes an Fe-M-O layer (where M = Al, Ti, Co, Mn, Cr, Ni or V).

摘要翻译： 本发明的交换耦合膜包括基板和多层膜。 多层膜包括：铁磁层和与铁磁层相邻设置的用于抑制铁磁层的磁化旋转的磁化抑制层; 磁化抑制层包括Fe-M-O层（其中M = Al，Ti，Co，Mn，Cr，Ni或V）。