公开(公告)号：EP0619872A4

公开(公告)日：1994-07-05

申请号：EP92904827

申请日：1991-12-30

申请人： UNIV LELAND STANFORD JUNIOR

发明人： ALBRECHT THOMAS ,  TORTONESE MARCO ,  BARRETT ROBERT

IPC分类号： G01B7/16 ,  G01B20060101 ,  G01B7/34 ,  G01B21/30 ,  G01L20060101 ,  G01L1/18 ,  G01Q20/04 ,  G01Q60/38 ,  G01Q60/40 ,  G01Q70/02 ,  H01J37/28 ,  H01L21/34

CPC分类号： G01Q60/38 ,  G01Q20/04 ,  Y10S977/851 ,  Y10S977/873

摘要： A microminiature cantilever structure is provided having a cantilever arm (102) with a piezoresistive resistor (120) embedded in at least the fixed end of th cantilever arm. Deflection of the free end of the cantilever arm produces stress in the base (150) of the cantilever that changes the piezoresistive resistor's resistance in proportion to the deflection. Resistance measuring apparatus (124) is coupled to the piezoresistive resistor. The microminiautre cantilever is formed on a semiconductor substrate (152). The cantilever arm is doped to form an electrically separate U-shaped piezoresistive resistor (160). A metal layer (266) is deposited over the semiconductor's surface and patterned to form electrical connections (162, 164) between the piezoresistive resistor and a resistance measuring circuit. The semiconductor substrate below the cantilever arm is substantially removed forming a cantilevered structure, and a tip (104) is connected to the free end of the cantilever arm for use in an atomic force microscope (100).

公开(公告)号：EP0165027A3

公开(公告)日：1987-08-19

申请号：EP85304050

申请日：1985-06-07

申请人： STAUFFER CHEMICAL COMPANY

发明人： Schachter, Rozalie ,  Viscogliosi, Marcello ,  Bunz, Lewis Andrew

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/314 ,  H01L21/34 ,  H01L21/363 ,  H01L29/80

CPC分类号： H01L51/0541 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02581 ,  H01L21/314 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/8126 ,  H01L51/001 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545

摘要： A thin film transistor characterised in that it comprises, as a switched semiconductor portion thereof, a thin film comprising MP x wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity is disclosed. A process for the production of a transistor characterised in that it comprises vacuum plasma sputtering of successive layers in contact of a semiconductor comprising MP x , wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is also disclosed. An insulated semidconductor device characterised in that it comprises as the switched semiconductor portion thereof a layer comprising MP., wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is further disclosed. Referring to the accompanying illustrative diagram, a Schottlky barrier thin film field effect transistor in accordance with the present invention may comprise a glass substrate (20), a high pnictide polypnictide semiconductor (22) of high resistivity, a metal (approximately 1 % Ni) doped layer (24) of the same semiconductor material of lower resistivity and metal source (26), gate (28) and drain (30) contacts deposited on layer (24). The present invention provides advances over the prior art.

摘要翻译： 一种薄膜晶体管，其特征在于，其包含作为其切换半导体部分的包含MPx的薄膜，其中M表示至少一种碱金属; P代表至少一个pnictide; 并且公开了从15到无穷大的x。 一种用于制造晶体管的方法，其特征在于，其包括与包含MPx的半导体接触的连续层的真空等离子体溅射，其中M表示至少一种碱金属; P表示至少一个pnictide，x的范围从15到无穷大; 并且还公开了包含pnictide的绝缘层。 一种绝缘半导体器件，其特征在于，其包含作为其开关半导体部分的包含MPx的层，其中M表示至少一种碱金属; P： 代表至少一个pnictide; 并且x的范围为15至无穷大，并且还公开了包含pnictide的绝缘层。 参考附图，根据本发明的肖特基势垒薄膜场效应晶体管可以包括玻璃衬底（20），高电阻率的高电阻聚合半导体（22），金属（约1％Ni） 掺杂层（24），其沉积在层（24）上的较低电阻率的金属源（26），栅极（28）和漏极（30）的相同半导体材料。 本发明提供了先有技术的进步。

公开(公告)号：EP4345909A1

公开(公告)日：2024-04-03

申请号：EP22860534.1

申请日：2022-08-24

申请人： BOE Technology Group Co., Ltd.

发明人： WANG, Lizhong ,  YUAN, Guangcai ,  NING, Ce ,  HU, Hehe ,  YAO, Nianqi ,  XUE, Dapeng ,  DONG, Shuilang ,  LEI, Liping ,  WANG, Dongfang ,  LI, Zhengliang

IPC分类号： H01L29/423 ,  H01L21/34 ,  H01L21/443 ,  H01L29/51 ,  H01L29/786

摘要： Embodiments of the present disclosure provide an oxide thin film transistor and a manufacturing method therefor, and an electronic device. The oxide thin film transistor comprises a base substrate (21), a gate (22) and a metal oxide semiconductor layer (24) that are sequentially stacked on the base substrate (21), and a gate insulating layer (23) provided between the metal oxide semiconductor layer (24) and the gate (22), wherein the gate insulating layer (23) comprises a silicon oxide insulating layer (231) and a silicon nitride layer (232) that are stacked; the silicon nitride layer (232) is of a single-layer structure or comprises a plurality of silicon nitride sub layers that are sequentially stacked; the silicon oxide insulating layer (231) is provided between the silicon nitride layer (232) and the metal oxide semiconductor layer (24); and at least part of the region of the silicon nitride layer (232) satisfies that: an Si-H bond occupies an Si-N bond, and the percentage content of the sum of an N-H bond and the Si-H bond is not greater than 7%. The thin film transistor can solve the problem of bulging of the gate insulating layer by adjusting the structure of the gate insulating layer.

公开(公告)号：EP4300588A1

公开(公告)日：2024-01-03

申请号：EP23175335.1

申请日：2023-05-25

申请人： INTEL Corporation

发明人： PENUMATCHA, Ashish Verma ,  O'BRIEN, Kevin P. ,  MAXEY, Kirby ,  NAYLOR, Carl H. ,  DOROW, Chelsey ,  AVCI, Uygar E. ,  METZ, Matthew V. ,  LEE, Sudarat ,  LIN, Chia-Ching ,  MA, Sean T.

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L21/34 ,  H01L29/778

摘要： Embodiments disclosed herein include transistors and methods of forming transistors. In an embodiment, the transistor comprises a channel with a first end and a second end opposite from the first end, a first spacer around the first end of the channel, a second spacer around the second end of the channel, and a gate stack over the channel, where the gate stack is between the first spacer and the second spacer. In an embodiment, the transistor may further comprise a first extension contacting the first end of the channel; and a second extension contacting the first end of the channel. In an embodiment, the transistor further comprises conductive layers over the first extension and the second extension outside of the first spacer and the second spacer.

公开(公告)号：EP3295475B1

公开(公告)日：2023-08-02

申请号：EP15858102.5

申请日：2015-12-10

发明人： YAN, Liangchen

IPC分类号： H01L21/34 ,  H01L29/786

公开(公告)号：EP3823045A1

公开(公告)日：2021-05-19

申请号：EP20206833.4

申请日：2020-11-11

申请人： Flosfia Inc.

发明人： Amazutsumi, Koji ,  Norimatsu, Kazuyoshi ,  Okigawa, Mitsuru

IPC分类号： H01L29/872 ,  H01L29/78 ,  H01L29/06 ,  H01L29/24 ,  H01L29/40 ,  H01L21/34 ,  H01L21/467 ,  H01L21/02

摘要： In a first aspect of a present inventive subject matter, a semiconductor device includes a crystalline oxide semiconductor layer; and at least one electrode electrically connected to the crystalline oxide semiconductor layer. The crystalline oxide semiconductor layer includes at least one trench in the crystalline oxide semiconductor layer at a side of a first surface of the crystalline oxide semiconductor layer. The trench includes a bottom, a side, and at least one arc portion with a radius of curvature that is in a range of 100 nm to 500 nm, and the at least one arc portion is positioned between the bottom and the side, and an angle between the side of the trench and the first surface of the crystalline oxide semiconductor layer is 90° or more.

公开(公告)号：EP3799132A1

公开(公告)日：2021-03-31

申请号：EP19808048.3

申请日：2019-05-21

申请人： BOE Technology Group Co., Ltd.

发明人： WANG, Ling ,  LIN, Yicheng ,  GAI, Cuili ,  XU, Pan

IPC分类号： H01L29/786 ,  H01L21/34 ,  H01L27/12

摘要： Provided are a thin-film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin-film transistor comprises: a base substrate; a first gate located on one side of the base substrate; an active layer located on the side of the first gate distant from the base substrate; a second gate located on the side of the active layer distant from the base substrate; and a source-drain electrode located on the side of the second gate distant from the base substrate. The orthographic projection of the source-drain electrode on the base substrate at least partially overlaps the orthographic projection of the second gate on the base substrate.

公开(公告)号：EP3549157A1

公开(公告)日：2019-10-09

申请号：EP17828831.2

申请日：2017-06-30

申请人： BOE Technology Group Co., Ltd.

发明人： SONG, Zhen ,  LI, Wei ,  WANG, Guoying

IPC分类号： H01L21/336 ,  H01L29/423 ,  H01L21/34

公开(公告)号：EP3320555A1

公开(公告)日：2018-05-16

申请号：EP15871296.8

申请日：2015-12-10

申请人： BOE Technology Group Co., Ltd. ,  South China University of Technology

发明人： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC分类号： H01L21/34 ,  H01L21/44 ,  H01L29/786 ,  H01L29/423 ,  H01L21/77 ,  H01L27/12

CPC分类号： H01L27/1214 ,  H01L21/28008 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

摘要： In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

公开(公告)号：EP2779242A4

公开(公告)日：2015-03-25

申请号：EP12848460

申请日：2012-11-08

申请人： TAMURA SEISAKUSHO KK

发明人： TAKIZAWA MASARU ,  KURAMATA AKITO

IPC分类号： H01L29/872 ,  H01L21/34 ,  H01L29/06 ,  H01L29/24 ,  H01L29/47

CPC分类号： H01L29/24 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/267 ,  H01L29/47 ,  H01L29/66969 ,  H01L29/872