公开(公告)号：EP1552035B1

公开(公告)日：2010-08-25

申请号：EP03727360.4

申请日：2003-04-25

申请人： Henkel AG & Co. KGaA

发明人： GIORDANI, Paolo ,  RIGAMONTI, Mauro ,  GASPARETTO, Valentino

IPC分类号： C23C22/34 ,  C23F3/06 ,  C23G1/08

CPC分类号： C23C22/36 ,  C23C22/34 ,  C23F3/06 ,  C23G1/086

公开(公告)号：EP2196509A1

公开(公告)日：2010-06-16

申请号：EP09155071.5

申请日：2009-03-13

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： LIU, Zhendong

IPC分类号： C09G1/02 ,  C09K3/14 ,  C23F3/06 ,  H01L21/321

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt% abrasive having an average particle size of ≤ 100 nm; 0.001 to 5 wt% quaternary compound; a material having a formula (I):

wherein R is selected from C 2 -C 20 alkyl, C 2 -C 20 aryl, C 2 -C 20 aralkyl and C 2 -C 20 alkaryl; wherein x is an integer from 0 to 20; wherein y is an integer from 0 to 20; wherein x + y ≥ 1; and, wherein the chemical mechanical polishing composition has a pH ≤ 5.

摘要翻译： 一种用于在互连金属中的至少一个，并使用化学机械抛光组合物包含水的低k介电材料的存在包括阻挡材料中的基材的化学机械抛光方法; 磨料具有上‰的平均粒径¤100nm的1〜40重量％; 0.001〜5重量％的季化合物; 具有式（I）的物质：其中R选自C 2 -C 20烷基，C 2 -C 20芳基，C 2 -C 20芳烷基和C 2 -C 20烷芳基; worin x为0至20的整数; worin y是从0到20的整数; worin X + Y‰¥1; 并且，worin所述化学机械抛光组合物的pH‰¤第五

公开(公告)号：EP0905754B1

公开(公告)日：2009-06-24

申请号：EP98115931.2

申请日：1998-08-24

申请人： SEZ AG

发明人： Kruwinus, Hans-Jürgen, Dipl.-Ing. ,  Sellmer, Reinhard, Dipl.-Ing. (FH)

IPC分类号： H01L21/3105 ,  H01L21/321 ,  H01L21/311 ,  H01L21/3213 ,  C23F3/06

CPC分类号： C23F1/20 ,  C23F1/18 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/32115 ,  H01L21/32134

公开(公告)号：EP1929071A1

公开(公告)日：2008-06-11

申请号：EP06803687.0

申请日：2006-09-15

申请人： CABOT MICROELECTRONICS CORPORATION

发明人： WANG, Yuchun ,  LU, Bin ,  PARKER, John ,  MARTIN, Roger

IPC分类号： C23F3/06 ,  C09G1/02 ,  H01L21/321

CPC分类号： C09G1/02 ,  C23F3/06 ,  H01L21/3212

摘要： A composition suitable for copper chemical-mechanical polishing (CMP) comprises an abrasive powder, such as a silica and/or alumina abrasive, in a liquid carrier. The composition has a transition metal content of less than about 5 parts per million (ppm), preferably less than about 2 ppm. Preferably the composition contains less than about 2 ppm of yttrium, zirconium, and/or iron. The CMP compositions, when combined with hydrogen peroxide, provide CMP slurries for copper CMP that have improved pot life by ameliorating hydrogen peroxide degradation in slurries.

公开(公告)号：EP1447461B1

公开(公告)日：2007-12-12

申请号：EP01976326.7

申请日：2001-10-24

申请人： Fundacion Inasmet ,  Fundacion Museo Guggenheim Bilbao

发明人： CANO IRANZO, Francisco ,  VAQUERO TXAPARTEGI, Maria Isabel ,  PELAYO RIVERA, Alberto

IPC分类号： C23G1/02 ,  C23F1/16 ,  C23F3/06

CPC分类号： C11D3/042 ,  C11D3/044 ,  C11D3/1266 ,  C11D3/222 ,  C11D11/0029 ,  C11D17/003 ,  C11D17/0043 ,  C23G1/00 ,  C23G1/02 ,  C23G1/103 ,  C23G1/106 ,  C23G1/205

摘要： The invention relates to a cleaning product containing: (A) a developing composition which comprises a mixture of nitric acid and hydrofluoric acid, a thickener, a surfactant, an indicator, water and, optionally, a propellant; and (B) a fixing composition which comprises a base, a thickener, a surfactant, water and a propellant. The inventive cleaning product can be used to clean titanium surfaces, such as titanium panels and facades.

公开(公告)号：EP1631416A4

公开(公告)日：2007-04-04

申请号：EP04751828

申请日：2004-05-10

申请人： ADVANCED TECH MATERIALS

发明人： DARSILLO MICHAEL ,  WRSCHKA PETER ,  BOGGS KARL

IPC分类号： B24D3/02 ,  B24B1/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  C23F3/06 ,  H01L21/302 ,  H01L21/321 ,  H01L21/461

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  C23F3/06 ,  H01L21/3212

摘要： A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.

公开(公告)号：EP1606431A1

公开(公告)日：2005-12-21

申请号：EP04720872.3

申请日：2004-03-16

申请人： ATOTECH Deutschland GmbH

发明人： MAHLKOW, Hartmut ,  SPARING, Christian

IPC分类号： C23F1/18 ,  C23F3/06 ,  H01L21/3213

CPC分类号： C23C18/1844 ,  C23C18/31 ,  C23C18/50 ,  C23F1/18 ,  C23F3/06 ,  H01L2924/0002 ,  H05K3/244 ,  H05K3/383 ,  H01L2924/00

摘要： A solution for etching copper or a copper alloy for producing a copper surface having the brightest possible finish for a metallization that is to follow is described. The solution has a pH on the order of 4 or less and is free of sulfate ions. It comprises: a) at least one oxidizing agent selected from the group comprising hydrogen peroxide and peracids, b) at least one substance selected from the group comprising aromatic sulfonic acids and salts of the aromatic sulfonic acids and optionally c) at least one N-heterocyclic compound. Further a method for depositing metal onto the surface of copper or a copper alloy is described. Said method comprises the following method steps: a) contacting the surface with the solution in accordance with the invention and b) coating the surface with at least one metal. The solution and the method are especially suited in the production of electric circuit carriers, more specifically for semiconductor manufacturing.

公开(公告)号：EP0896042B1

公开(公告)日：2005-02-09

申请号：EP98305999.9

申请日：1998-07-28

申请人： Cabot Microelectronics Corporation

发明人： Grumbine, Steven K. ,  Streinz, Christopher C. ,  Hoglund, Eric W.G.

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  C23F3/00 ,  C23F3/04 ,  C23F3/06

CPC分类号： C23F3/00 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing composition and slurry comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching and methods for using the composition and slurry to polish tungsten containing substrates.

公开(公告)号：EP1242651A2

公开(公告)日：2002-09-25

申请号：EP00985228.6

申请日：2000-12-21

申请人： Henkel Kommanditgesellschaft auf Aktien ,  ACCIAI SPECIALI TERNI S.p.a.

发明人： GIORDANI, Paolo, Bruno ,  GASPARETTO, Valentino ,  NEGRI, Dario

IPC分类号： C23F3/06 ,  C23C22/48 ,  C23C22/34

CPC分类号： C01B15/037 ,  C23C22/10 ,  C23C22/50 ,  C23F3/06 ,  C23G1/083

摘要： A chromium- and nitrogen-free brightening and passivating treatment for metal surfaces, particularly iron and steel, comprises: at least one acid; at least one substance containing a peroxy moiety; and at least one organic substance selected from the group consisting of: molecules that contain both at least one ether moiety and at least one hydroxyl moiety; molecules that contain at least two ether moieties; and molecules that contain in each molecule both at least one ether moiety and one nitrogen atom that is covalently bonded to at least three carbon atoms. Preferably part of the acid contains phosphorus, which has been found to act synergistically with the organic substance to stabilize peroxy compounds against decomposition, particularly in the presence of metal ions.

公开(公告)号：EP0816532B1

公开(公告)日：2001-03-28

申请号：EP97304265.8

申请日：1997-06-18

申请人： YKK CORPORATION

发明人： Tomiyama, Takashi

IPC分类号： C23F3/06 ,  A44B19/42

CPC分类号： C23F3/06 ,  A44B19/42