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    Vertical cavity surface emitting laser (vcsel), vcsel array device, optical scanning apparatus, and image forming apparatus
    62.
    发明公开
    Vertical cavity surface emitting laser (vcsel), vcsel array device, optical scanning apparatus, and image forming apparatus 有权
    Vertikalresonator-Oberflächenemissionslaser（VCSEL），VCSEL-Arrayvorrichtung，optischesAbtastgerätund Bilderzeugungsvorrichtung

    公开(公告)号：EP2131458A3

    公开(公告)日：2011-02-09

    申请号：EP09251433.0

    申请日：2009-05-29

    申请人： Ricoh Company, Ltd.

    发明人： Kei, Hara ,  Morimasa, Kaminishi

    IPC分类号： H01S5/183 ,  H01S5/343 ,  H01S5/42 ,  H01S5/34 ,  H01S5/32

    CPC分类号： H01S5/18355 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3202 ,  H01S5/3218 ,  H01S5/3404 ,  H01S5/34306 ,  H01S5/3436 ,  H01S5/423

    摘要： A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed thereon, an active layer formed on the lower reflecting mirror, a selective oxidization layer including a current confined structure, and an upper reflecting mirror. A mesa structure is formed in at least the active layer, selective oxidization layer, and the upper reflecting mirror. The VCSEL emits laser light perpendicularly to the plane of the semiconductor substrate when an electric current flows between an upper electrode and a lower electrode. The semiconductor substrate is inclined with respect to (100) plane, and the active layer includes a quantum well layer having a compressive strain with respect to the substrate, and a spacer layer. The spacer layer has either a compressive strain or a tensile strain with respect to the semiconductor substrate.

    摘要翻译： 垂直腔面发射激光器（VCSEL）包括半导体衬底，形成在其上的下反射镜，形成在下反射镜上的有源层，包括电流限制结构的选择性氧化层和上反射镜。 至少在有源层，选择性氧化层和上反射镜中形成台面结构。 当电流在上电极和下电极之间流动时，VCSEL发射垂直于半导体衬底的平面的激光。 半导体衬底相对于（100）平面倾斜，并且有源层包括相对于衬底具有压缩应变的量子阱层和间隔层。 间隔层相对于半导体衬底具有压缩应变或拉伸应变。

    Conductive element with lateral oxidation barrier
    69.
    发明公开
    Conductive element with lateral oxidation barrier 失效
    LeitfähigesElement mit seitlicher Oxidationsbarriere

    公开(公告)号：EP1986295A2

    公开(公告)日：2008-10-29

    申请号：EP06090221.0

    申请日：1996-12-04

    申请人： Picolight Incorporated

    发明人： Jewell, Jack L.

    IPC分类号： H01S5/183 ,  H01S5/20

    CPC分类号： H01S5/18355 ,  G02B3/00 ,  H01L33/105 ,  H01S5/0042 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18372 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/2215 ,  H04L67/34 ,  H04L69/329

    摘要： A light emitting device comprising:
    a light emitting active region (86);
    at least a first oxidizing layer disposed above said active region (86), said first oxidizing layer being significantly oxidized in a laterally oriented first region (28), said first region (28) exhibiting high electrical resistance;
    a laterally oriented second region (32) of said first oxidizing layer which is not significantly oxidized and having electrical resistance significantly lower than said first region (28), said second region (32) being in electrical communication with said active region (86); and
    top and bottom electrical contacts (96, 98) disposed to communicate with said active region (86).

    摘要翻译： 一种发光器件，包括：发光有源区（86）; 至少第一氧化层设置在所述有源区（86）之上，所述第一氧化层在横向取向的第一区（28）中被显着氧化，所述第一区（28）表现出高电阻; 所述第一氧化层的横向取向的第二区域（32）不被显着地氧化并且具有显着低于所述第一区域（28）的电阻，所述第二区域（32）与所述有源区域（86）电连通。 以及设置成与所述有源区域（86）连通的顶部和底部电触点（96,98）。