公开(公告)号：EP1717846A4

公开(公告)日：2009-05-27

申请号：EP05719124

申请日：2005-02-15

申请人： NIPPON MINING CO

发明人： NAKAMURA MASASHI ,  OOTA SUGURU ,  HIRANO RYUICHI

IPC分类号： H01L21/203 ,  C23C14/54 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  C30B29/40

CPC分类号： H01L21/02658 ,  C30B23/002 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631

摘要： A vapor-phase deposition method for growing an epitaxial layer of a compound semiconductor such as InAlAs on a semiconductor substrate of, e.g., Fe-doped InP with good reproducibility. In the vapor-phase deposition method, the resistivity of the semiconductor substrate at the room temperature is previously measured, the set temperature of the substrate is controlled according to the resistivity at the room temperature so that the actual surface temperature of the substrata may be a desired one independently of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.

公开(公告)号：EP1995796A3

公开(公告)日：2009-02-18

申请号：EP08014729.1

申请日：2002-10-08

申请人： Sumitomo Electric Industries, Ltd.

发明人： Motoki, Kensaku ,  Hirota, Ryu ,  Okahisa, Takuji ,  Nakahata, Seiji

IPC分类号： H01L33/00 ,  C30B25/02 ,  C30B23/02

CPC分类号： C30B29/406 ,  C30B23/002 ,  C30B25/02 ,  C30B29/403

摘要： A single crystal GaN substrate having a top surface, a bottom surface, a diameter of more than or equal to 1 inch (25mm) and a thickness of more than or equal to 120µm, the top surface comprising: a linear low dislocation single crystal region (Z) extending in both a direction of thickness and a direction defined on the top surface; and two linear voluminous defect accumulating regions (H) extending in the same direction as the low dislocation single crystal region (Z), having interfaces (K) on both sides and being in contact with the low dislocation single crystal regions (Z) via the interfaces (K), the low dislocation density single crystal region (Z) being sandwiched by the linear voluminous defect accumulating regions (H).

公开(公告)号：EP1997125A2

公开(公告)日：2008-12-03

申请号：EP07712941.9

申请日：2007-03-19

申请人： Nanogan Limited

发明人： WANG, Wang, Nang

IPC分类号： H01L21/20 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/48 ,  C30B33/00

CPC分类号： C30B25/005 ,  C30B23/007 ,  C30B25/18 ,  C30B29/40 ,  C30B29/406 ,  C30B29/48 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02653 ,  Y10T428/24612

摘要： A method utilizes HVPE to grow high quality flat and thick compound semiconductors (15) onto foreign substrates (10) using nanostructure compliant layers. Nanostructures (12) of semiconductor materials can be grown on foreign substrates (10) by molecular beam epitaxy (MBE), chemical vapour deposition (CVD), metalorganic chemical vapour deposition (MOCVD) and hydride vapour phase epitaxy (HVPE). Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.

摘要翻译： 一种方法，利用HVPE使用纳米结构柔顺层走上异质衬底（10）生长高质量平且厚的化合物半导体（15）。 半导体材料的汽车的纳米结构（12）通过分子束外延（MBE），化学气相沉积（CVD），金属有机化学气相沉积（MOCVD）和氢化物气相外延（HVPE）异质衬底（10）上生长。 连续的化合物半导体厚膜（15）或晶片的进一步的生长是通过外延横向过生长使用HVPE来实现。

公开(公告)号：EP1158077B1

公开(公告)日：2007-08-29

申请号：EP00985890.3

申请日：2000-12-26

申请人： SHOWA DENKO KABUSHIKI KAISHA

发明人： SHIGETO, Masashi ,  YANO, Kotaro ,  NAGATO, Nobuyuki

IPC分类号： C30B29/36 ,  C30B23/02 ,  H01L21/205 ,  C30B23/00 ,  C30B25/00

CPC分类号： C30B23/02 ,  C30B23/00 ,  C30B25/00 ,  C30B29/36

摘要： Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas and allowing the gas to reach a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten or gaseous state to generate the reaction gas. An apparatus used for producing the silicon carbide single crystal comprises a reaction crucible, and a seed crystal substrate disposed in the crucible; and further comprises means for maintaining the carbon raw material placed in the crucible at a temperature such that carbon is allowed to react with silicon in a molten or gaseous state to generate the reaction gas, and means for continuously feeding the silicon raw material onto the carbon raw material placed in the crucible.

公开(公告)号：EP1215730B9

公开(公告)日：2007-08-01

申请号：EP00956966.6

申请日：2000-09-06

申请人： Sixon Inc. ,  Kansai Electric Power C.C., Inc. ,  MITSUBISHI CORPORATION ,  Sumitomo Electric Industries, Ltd.

发明人： SHIOMI, Hiromu ,  KIMOTO, Tsunenobu ,  MATSUNAMI, Hiroyuki

IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L29/78 ,  C30B29/36 ,  C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B25/20

CPC分类号： H01L29/1608 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02516 ,  H01L21/02529 ,  H01L21/02579 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/78

摘要： A SiC wafer comprises a 4H polytype SiC substrate 2 in which the crystal plane orientation is substantially ä03-38ü, and a buffer layer 4 composed of SiC formed over this SiC substrate 2. The ä03-38ü plane forms an angle of approximately 35 DEG with respect to the axial direction in which micropipes and so forth extend, so micropipes and so forth are eliminated at the crystal sides, and do not go through to an active layer 6 on the buffer layer 4. Lattice mismatching between the SiC substrate 2 and the active layer 6 is suppressed by the buffer layer 4. Furthermore, anisotropy in the electron mobility is low because a 4H polytype is used. Therefore, it is possible to obtain a SiC wafer and a SiC semiconductor device with which there is little anisotropy in the electron mobility, and strain caused by lattice mismatching can be lessened, as well as a method for manufacturing these.

摘要翻译： 一种SiC晶片，其包括面取向为约{03-38}的4H多晶SiC衬底（2）和形成在SiC衬底（2）上的SiC缓冲层（4）。 由于{03-38}面相对于微管等延伸的<0001×轴方向形成约35°的角度，所以微管等在晶体侧面消失， 不进入缓冲层（4）上的有源层（6）。 另外，SiC衬底（2）和有源层（6）之间的晶格失配受到缓冲层（4）的限制，并且使用4H多晶型降低了电子迁移率的各向异性，从而提供了减小的SiC晶片 在电子迁移率的各向异性中通过晶格失配而缓和应变，SiC半导体器件及其制造方法。

公开(公告)号：EP1803840A3

公开(公告)日：2007-07-18

申请号：EP07006992.7

申请日：1999-12-24

申请人： SHOWA DENKO KABUSHIKI KAISHA

发明人： Yano, Kotaro ,  Yamamoto, Isamu ,  Shigeto, Masashi ,  Nagato, Nobuyuki

IPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B25/20

CPC分类号： C30B23/00 ,  C30B29/36

摘要： In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so as to grow a silicon carbide single crystal (3) on the seed crystal, the temperature gradient from the back surface of the seed crystal (2) toward the crucible cap (8) side is rendered zero or a positive value, whereby the back surface sublimation from the back surface of the seed crystal (2) is prevented or suppressed.
Furthermore, by allowing the inner wall of the growth vessel in the periphery of the seed crystal to have a temperature higher than the temperature on the surface of the seed crystal (2), a polycrystal silicon carbide is prevented or suppressed from growing and thereby inhibiting the growth of a silicon carbide single crystal (3).

公开(公告)号：EP1314800A4

公开(公告)日：2007-02-14

申请号：EP01961296

申请日：2001-08-31

申请人： JAPAN SCIENCE & TECH AGENCY

发明人： KOINUMA HIDEOMI ,  KAWASAKI MASASHI ,  MATSUMOTO YUJI

IPC分类号： C30B29/22 ,  H01L39/24 ,  C30B19/04 ,  C30B23/02 ,  C30B25/02

CPC分类号： H01L39/2438 ,  C30B19/04 ,  C30B23/002 ,  C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  C30B29/225

摘要： The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

公开(公告)号：EP1494269A1

公开(公告)日：2005-01-05

申请号：EP03745948.4

申请日：2003-04-07

申请人： Tokyo University of Agriculture and Technology TLO Co., Ltd.

发明人： KOUKITSU, Akinori, The Faculty of Tech. Tokyo ,  KUMAGAI, Yoshinao, The Faculty of Tech. Tokyo ,  MARUI, Tomohiro, The Faculty of Tech. Tokyo

IPC分类号： H01L21/205 ,  C30B23/02 ,  C30B25/14 ,  C30B29/38 ,  C30B29/40 ,  C23C16/34

CPC分类号： C30B25/02 ,  C23C16/303 ,  C30B25/14 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1016

摘要： A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700°C or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

公开(公告)号：EP1219731B1

公开(公告)日：2004-04-28

申请号：EP00942464.9

申请日：2000-07-03

申请人： Japan Science and Technology Agency

发明人： YOSHIDA, Hiroshi ,  SATO, Kazunori

IPC分类号： C30B29/16 ,  C30B23/02

CPC分类号： G06N99/002 ,  B82Y10/00 ,  C30B23/02 ,  C30B29/16

摘要： The present invention provides a single-crystal ZnO thin film having a high ferromagnetic transition temperature. In one aspect of the present invention, the ZnO thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal element consisting of Mn, and a p-type dopant. In another aspect of the present invention, the thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal element consisting of Mn, a p-type dopant, and an n-type dopant. The single-crystal zinc oxide material can be applied to quantum computers and high-capacity magnetic-optical recording medium by combining with conventional n-type or p-type transparent electrode ZnO materials or optical fibers, and to powerful information-communication devices or quantum computers as a photoelectric material usable for a wide range from visible light to ultraviolet light.

公开(公告)号：EP1411152A2

公开(公告)日：2004-04-21

申请号：EP02024418.2

申请日：2002-10-28

申请人： Theva Dünnschichttechnik GmbH

发明人： Metzger, Ralf, Dipl.-Phys. ,  Numssen, Kai, Dr. ,  Kinder, Helmut, Prof. Dr.

IPC分类号： C30B23/02 ,  C04B41/89 ,  H01L39/24

CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2111/0025 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2461 ,  C04B41/4529 ,  C04B41/5042 ,  C04B41/5029 ,  C04B41/522 ,  C04B41/5074 ,  C04B41/524 ,  C04B35/04 ,  C04B35/10 ,  C04B35/48

摘要： In einem erfindungsgemäßen Verfahren zur Herstellung einer Hochtemperatur-Supraleiterschicht wird ein polykristallines oder amorphes Substrat (1) mittels Beschichtung unter schräger Depositionsrichtung (ISD) mit einer biaxial texturierten Pufferschicht (2) versehen. Oberhalb dieser Pufferschicht wird weiterhin eine Schicht (4a,4b) umfassend RBCO aufgebracht, wobei R ein Element der Ordnungszahl 57-64 oder eine Mischung aus zumindest zweien dieser Elemente ist. Weiterhin ist eine erfindungsgemäße Hochtemperatur-supraleitende Schichtstruktur offenbart, aufweisend ein polykristallines oder amorphes Substrat (1), eine biaxial texturierte Pufferschicht (2), die mittels Beschichtung unter schräger Depositiorisrichtung (ISD) aufgebracht wurde und eine Schicht (4a,4b) umfassend RBCO, wobei R ein Element der Ordnungszahl 57-64 oder eine Mischung aus zumindest zweien dieser Elemente ist.

摘要翻译： 高温超导层结构的生产包括：在多晶或（1）使用在沉积方向上的涂层，以及施加来自RBa2Cu3O7（RBCO）制成的层（4a）的无定形衬底上形成双轴织构的缓冲层（2）（其中 R =具有在57原子序数为64的元素）。 因此独立claimsoft包括由上述方法制造的高温超导层结构。