摘要:
A multi-mode position location method detects the location of movable detection devices (31') which are attached to movable carriers (31) in a simulated battlefield. The multi-mode position location method employs three modes of position location of the detection devices. The first mode is a Global Positioning System (GPS) differentially corrected position (72) of the detection device (31'). The second mode is a multilateration determined position (84) of the detection device. The third mode is an autonomously determined GPS position (78) of the detection device. The autonomously determined position (78) is determined without any differential GPS corrections. The most accurately determined position of the detection device (31') may be used for area weapons effects simulation (10) and carrier tracking by transmitting the carrier's position to a master control station (11).
摘要:
A ballast circuit for driving a gas discharge having a source of pulsating and rectified AC (20), an energy storage circuit (30), a switch (40) that can have one end connected to an energy storage inductor and an opposite end that can be connected to circuit common; a control circuit (50) for opening and closing the switch (40) at a rate that is a function of at least a DC control current, a resonant circuit (60) that is coupled to the energy storage circuit (30) for energizing the gas discharge lamp.
摘要:
A method for forming a solder bump on an integrated circuit die utilizes a terminal (12) formed of an electrically conductive, solder-wettable composite material composed of copper particles and a polymeric binder. The terminal comprises a bond pad (24) overlying a passivation layer (20) on the die and a runner section (26) connecting the bond pad to a metal contact (16). The terminal is applied to the die, for example, as an ink by screen printing, after which a body of solder alloy is reflowed in contact with the bond pad to form the bump. A preferred material for the terminal is composed of silver-plated copper particles and a resol type phenolic binder.
摘要:
A novel off-line bootstrap startup circuit (10) including a high voltage device (100) for providing an initial bias voltage to an integrated circuit (IC) is provided. The high voltage device includes an NMOS transistor (102) having a high source to ground breakdown voltage thereby extending a bias voltage range provided to the IC. This bias voltage range may be needed to support large comparator (303) hysteresis and allow for an unregulated bias voltage. The bootstrap startup circuit becomes inoperative when the bias voltage exceeds a predetermined value.
摘要:
In a data synchronizer a timing error estimator (16) samples a received data stream and generates a clock to provide optimal sampling of the data stream, and a lock detector (17) monitors the clock and received data stream to provide an indication of whether optimal sampling has been achieved. The lock detector (17) processes differences between delayed versions of the input which are sampled based upon the clock timing. These sampled differences are then processed by a non-linear circuit (149, 159, 169, 179) to provide a lock signal indication which, when compared to a predetermined threshold signal, is used to provide optimal sampling indication. The lock detector (17) performs computations on real (145) and complex (165) inputs and therefore is compatible with a wide variety of modulation types. The lock detector (17) can be implemented in either analog or digital circuits, making it applicable to a broad range of data synchronizer applications.
摘要:
A method for forming a dielectric layer (16) on a high temperature metal layer (14) is provided. By processing the high temperature metal layer (14) with a non-oxidizing photoresist stripper and absent a photoresist hardening step, adhesion between the high temperature metal layer (14) and a dielectric layer (16) subsequently formed on the high temperature metal layer (14) is significantly improved. The dielectric layer (16) will adhere to the high temperature metal layer (14) in high temperature environments. The method is suitable for forming multi-layer metallization and buried layer structures for semiconductor integrated circuits.
摘要:
A method for forming a semiconductor device includes forming insulated gate regions (122,222) on a substrate (26) using a first photo-masking step, forming a base region (47) through an opening (143) between the insulated gate regions (122,222), and forming a source region (152) within the base region (47). Next, a protective layer (61) is formed and selectively patterned using a second photo-masking step to form an opening (62) within the first opening (143) and an opening (63) above one of the insulated gate regions (122). Next, a portion (66) of the substrate (26) and a portion (67) of the insulated gate region (122) are removed. Ohmic contacts (74,76) are then formed and patterned using a third photo-masking step. Additionally, a termination structure (81) is described.
摘要:
A sensor (10,30) is formed that does not require a bonding process in an oxygen rich or vacuum ambient. In a first embodiment, a port (14), a channel (15) and an opening (18) are used to provide an oxidizing ambient to a cavity (13). During an oxidation process, the cavity (13) is sealed and any remaining oxidizing ambient is consumed to form a sealed cavity that is under a vacuum pressure. In an alternate embodiment, a cavity (32) is formed in a first substrate (31). The cavity (32) is covered by a second substrate (36) and an opening (33,34) is formed in the second substrate (36) above the cavity (32). These openings (33,34) allow an oxidizing ambient to enter the cavity (32).
摘要:
A heterostructure field effect transistor and method including at least one passivation layer (20) and at least one etch stop layer (22). Enhancement, depletion and combined devices with both enhancement mode and depletion mode devices are possible with minor process variations. Refractory gate (40) and non-gold refractory ohmic contact (52) metallization combined with other features allows non-liftoff metal patterning.
摘要:
Electron column optics include a first electrical lens assembly (13) positioned to receive electrons from a rectangular electron source (12) and designed to accelerate the electrons to a first range of acceleration. The first electrical lens assembly (13) is further designed to substantially compensate for astigmatism produced by the first acceleration. A second electrical lens assembly (14) is positioned to receive electrons from the first electrical lens assembly (13) and is designed to accelerate the electrons to a second range of acceleration. The second electrical lens assembly (14) is further designed to focus the received electrons onto a remote surface (15).