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135 条记录 (耗时 0.013 秒)

    NANOTUBE PERMEABLE BASE TRANSISTOR AND METHOD OF MAKING SAME
    71.
    发明公开
    NANOTUBE PERMEABLE BASE TRANSISTOR AND METHOD OF MAKING SAME 审中-公开
    具有耐诺渗透BASIS和工艺晶体管用于生产

    公开(公告)号：EP1537605A1

    公开(公告)日：2005-06-08

    申请号：EP03761093.8

    申请日：2003-06-17

    申请人： Nantero, Inc.

    发明人： VOGELI, Bernhard ,  RUECKES, Thomas ,  SEGAL, Brent, M.

    IPC分类号： H01L31/109

    CPC分类号： H01L51/0575 ,  B82Y10/00 ,  H01L29/7722 ,  H01L51/0048 ,  H01L51/0504

    摘要： A permeable base transistor (PBT) having a base layer (112) including metallic nanotubes (110) embedded in a semiconductor crystal material is disclosed. The nanotube base layer separates emitter (104E) and collector (104C) layers of the semiconductor material. A method of making a permeable base transistor (PBT) is disclosed. According to the method, a semiconductor substrate is provided, a base layer is provided on the substrate, and a semiconductor layer is grown over the base layer. The base layer includes metallic nanotubes, which may be grown or deposited on the semiconductor substrate. The nanotube base layer separates emitter and collector layers of semiconductor material.

    ENHANCED LIGHT-EMITTING DIODE
    72.
    发明公开
    ENHANCED LIGHT-EMITTING DIODE 有权
    改进的发光二极管

    公开(公告)号：EP1320899A1

    公开(公告)日：2003-06-25

    申请号：EP01954944.3

    申请日：2001-07-25

    申请人： American Xtal Technology, Inc.

    发明人： CHEN, John ,  LIANG, Bingwen ,  SHIH, Robert

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L29/12 ,  H01L29/20 ,  H01L31/109

    CPC分类号： H01L33/38 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/30

    摘要： A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer (207) formed of p doped GaP; a low impedance second layer (208) formed of p GaAs; an amorphous conducting layer (209) formed of Indium Tin Oxide (ITO), and a titanium/gold contact (210). In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer, and is insulated from direct contact with the first layer.

    METAL SULFIDE SEMICONDUCTOR TRANSISTOR DEVICES
    73.
    发明公开
    METAL SULFIDE SEMICONDUCTOR TRANSISTOR DEVICES 审中-公开
    金属硫化物半导体器件晶体管

    公开(公告)号：EP1312123A1

    公开(公告)日：2003-05-21

    申请号：EP01963936.8

    申请日：2001-08-10

    申请人： Braddock, Walter David IV

    发明人： Braddock, Walter David IV

    IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/802 ,  H01L29/24 ,  H01L29/267 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66924 ,  H01L29/7782

    摘要： A self-aligned enhancement mode metal-sulfide-compound semiconductor field effect transistor (10) includes a lower sulfide layer that is a mixture of Ga2S, Ga2S3, and other gallium sulfide compounds (30), and a second insulating layer that is positioned immediately on top of the gallium sulphur layer together positioned on upper surface (14) of a III-V compound semiconductor wafer structure (13). Together the lower gallium sulfide compound layer and the second insulating layer form a gallium sulfide gate insulating structure. The gallium sulfide gate insulating structure and underlying compound semiconductor gallium arsenide layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The initial essentially gallium sulphur layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating sulfide layer. A refractory metal gate electrode layer (17) is positioned on upper surface (18) of the second insulating sulfide layer. The refractory metal is stable on the second insulating sulfide layer at elevated temperature. Self-aligned source and drain areas, and source and drain contacts (19, 20) are positioned on the source and drain areas (21, 22) of the device. Multiple devices are then positioned in proximity and the appropriate interconnection metal layers and insulators are utilized in concert with other passive circuit elements to form a integrated circuit structure.

    HETEROJUNCTION ENERGY GRADIENT STRUCTURE
    75.
    发明公开
    HETEROJUNCTION ENERGY GRADIENT STRUCTURE 失效
    异质结结构MIT能量梯度

    公开(公告)号：EP0789935A4

    公开(公告)日：1998-08-19

    申请号：EP95938897

    申请日：1995-10-25

    申请人： INTEVAC INC

    发明人： DAVIS GARY A

    IPC分类号： H01L31/10 ,  H01J1/34 ,  H01L21/331 ,  H01L29/205 ,  H01L29/66 ,  H01L29/73 ,  H01L29/737 ,  H01L31/032 ,  H01L31/103 ,  H01L31/105 ,  H01L31/108 ,  H01L31/109 ,  H01L31/075

    CPC分类号： H01L31/1035 ,  H01L29/205 ,  H01L31/105 ,  H01L31/108

    摘要： A smooth and monotonic potential energy gradient was established at a p-type (InGa)As - undoped InP heterojunction to efficiently transfer conduction electrons from the (InGa)As:p layer (14) to the InP:ζ layer (20). This potential energy gradient was established with a compositionally graded p-type semiconductor alloy layer (16) and an n-type InP built-in field layer (18) interposed at the heterojunction. The compositionally graded semiconductor alloy layer spatially distributes the conduction band discontinuity of the (InGa)As - InP heterojunction and the InP:n built-in field layer eliminates potential energy barries from the conduction band over a wide range of externally-applied biases including no externally applied bias. The smooth and monotonic potential energy gradient thus established promotes efficient transfer of the conduction electrons due to drift from the (InGa)As:p layer to the large bandgap InP collector layer where they contribute to the output current of any number of electronic devices. The utility of this potential energy grading structure was demonstrated in a transferred-electron photocathode device wherein the efficient transfer of photoelectrons from the (InGa)As:p absorber layer to the InP:ζ electron-transfer layer has been utilized.

    Heterojunction pin photodiode
    76.
    发明公开
    Heterojunction pin photodiode 失效
    异质结PIN光电二极管

    公开(公告)号：EP0800219A2

    公开(公告)日：1997-10-08

    申请号：EP97105610.6

    申请日：1997-04-04

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Ishibashi, Tadao ,  Furuta, Tomofumi ,  Shimizu, Naofumi ,  Nagata, Koichi ,  Matsuoka, Yutaka ,  Tomizawa, Masaaki

    IPC分类号： H01L31/105 ,  H01L31/109

    CPC分类号： H01L31/105

    摘要： A hetrajunction pin photodiode having a structure capable of high frequency response and saturation output current. The pin photodiode is formed by: a first semiconductor layer (11) of a first conduction type; a second semiconductor layer (12) of a second conduction type; a third semiconductor layer (13) sandwiched between the first and second semiconductor layers, having a doping concentration lower than those of the first and second semiconductor layers; a fourth semiconductor layer (14) of the first conduction type, provided at one side of the first semiconductor layer opposite to a side at which the third semiconductor layer is provided; and a cathode electrode (16) and an anode electrode (15) connected directly or indirectly to the second semiconductor layer (12) and the fourth semiconductor layer (14), respectively. The first semiconductor layer (11) has a bandgap energy by which a charge neutrality condition is maintained in at least a part of the first semiconductor layer and the first semiconductor layer is made to function as a light absorption layer, while the second and third semiconductor layers (12,13) have bandgap energies by which the second and third semiconductor layers are made not to function as a light absorption layer, and the fourth semiconductor layer (14) has a bandgap energy greater than that of the first semiconductor layer.