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    PLANAR PATCH CLAMP DEVICE, ELECTRODES FOR SAID DEVICE AND CELL ION CHANNEL CURRENT MEASUREMENT METHOD
    81.
    发明公开
    PLANAR PATCH CLAMP DEVICE, ELECTRODES FOR SAID DEVICE AND CELL ION CHANNEL CURRENT MEASUREMENT METHOD 审中-公开
    平面膜片钳装置，电极上对所述设备和方法测量细胞离子通道

    公开(公告)号：EP2801820A1

    公开(公告)日：2014-11-12

    申请号：EP12859984.2

    申请日：2012-12-05

    Applicant: Japan Science and Technology Agency

    Inventor： URISU, Tsuneo ,  WANG, Zhi-hong ,  UNO, Hidetaka ,  OBULIRAJ, Senthil Kumar ,  NAGAOKA, Yasutaka

    IPC: G01N27/28 ,  C12M1/34 ,  C12Q1/02 ,  G01N27/00 ,  G01N27/416

    CPC classification number: G01N33/48728 ,  G01N27/416

    Abstract: An object of the present invention is directed to reducing a noise current by suppressing variations in an applied membrane potential in the planar patch clamp device, thereby enabling accurate measurement of an ion channel current.
    A planar patch clamp device comprising: an electrically insulative substrate having at least one fine through holes; a liquid reservoir and an electrode unit disposed on each of surfaces of the through-hole are configured so that the liquid reservoir retains a conductive liquid and the electrode unit is electrically communicate with the liquid reservoir, wherein the electrode comprises (a) an electrode vessel, wherein at least part of a vessel wall is made of an inorganic porous material, (b) an electrode in which a chloride (NmCl) layer is formed on the surface of a noble metal (Nm), and (c) an electrode solution containing (NmCl) and an alkali metal chloride being dissolved at a saturated concentration, is disclosed.

    Abstract translation: 本发明的目的是针对通过在平面膜片钳装置抑制膜电位变化，以应用，从而使离子通道电流的精确测量降低噪声电流。 一种平面膜片钳装置，其包括：具有至少一个通细孔的电绝缘性基板; 贮液器和电极单元设置在每个通孔象液体贮存RETAIN导电液体与电极单元电性与液体贮存器连通，worin所述电极包括被配置的（a）到电极容器的表面的 中，血管壁的worin至少一部分由无机多孔材料构成，（b）至电极，其中一个氯（NMCL）层由贵金属（NM），和电极溶液（c）的表面上形成 含有（NMCL）和碱金属氯化物在饱和浓度被溶解，是游离缺失盘。

    NMR IMAGING DEVICE AND NMR IMAGING METHOD
    82.
    发明公开
    NMR IMAGING DEVICE AND NMR IMAGING METHOD 审中-公开
    NMR-BILDGEBUNGSVORRICHTUNG NMR-BILDGEBUNGSVERFAHREN

    公开(公告)号：EP2799849A1

    公开(公告)日：2014-11-05

    申请号：EP12860186.1

    申请日：2012-12-18

    Applicant: Japan Science and Technology Agency

    Inventor： SASAKI, Susumu ,  YUGE, Tatsuro ,  HIRAYAMA, Yoshiro

    IPC: G01N24/08 ,  A61B5/055 ,  G01R33/48 ,  H01L21/66

    CPC classification number: G01R33/50 ,  G01N24/08 ,  G01R33/34 ,  G01R33/56 ,  H01L22/12

    Abstract: In order to provide an NMR imaging device capable of distinguishing substances that cannot be distinguished by T 2 H , an NMR imaging device (1) according to this invention includes: a probe (3) capable of housing a sample in a static gradient magnetic field; an application portion (5) configured to apply a π pulse having a Larmor frequency corresponding to the static gradient magnetic field at a predetermined position of the sample to the sample in a multiplexed manner at a predetermined time interval; and an image processing portion (7) configured to determine a relaxation time based on a nuclear magnetic resonance signal of the sample, and perform imaging of the relaxation time.

    Abstract translation: 为了提供能够区分不能被T 2 H区分的物质的NMR成像装置，根据本发明的NMR成像装置（1）包括：能够以静态梯度磁场容纳样品的探针（3） ; 应用部分（5），其被配置为以预定的时间间隔以多路复用方式将具有对应于样本的预定位置的静态梯度磁场的拉莫尔频率的脉冲施加到样本; 以及图像处理部（7），被配置为基于所述样本的核磁共振信号来确定弛豫时间，并进行所述弛豫时间的成像。

    THERMOELECTRIC MATERIAL, METHOD FOR PRODUCING SAME, AND THERMOELECTRIC CONVERSION MODULE USING SAME
    85.
    发明公开
    THERMOELECTRIC MATERIAL, METHOD FOR PRODUCING SAME, AND THERMOELECTRIC CONVERSION MODULE USING SAME 有权
    热敏材料，HERSTELLUNGSVERFAHRENDAFÜR，热塑性弹性体

    公开(公告)号：EP2784835A1

    公开(公告)日：2014-10-01

    申请号：EP13796323.7

    申请日：2013-05-15

    Applicant: Japan Science and Technology Agency

    Inventor： NAKAMURA, Yoshiaki ,  ISOGAWA, Masayuki ,  UEDA, Tomohiro ,  KIKKAWA, Jun ,  SAKAI, Akira ,  HOSONO, Hideo

    IPC: H01L35/32 ,  H01L35/14 ,  H01L35/34

    CPC classification number: H01L35/22 ,  H01L35/00 ,  H01L35/12 ,  H01L35/14 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34

    Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening.
    As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.

    Abstract translation: 热电材料包括半导体衬底，形成在衬底上的半导体氧化膜和设置在氧化物膜上的热电层。 半导体氧化膜具有形成在其中的第一纳米开口。 热电层具有将半导体纳米点堆叠在第一纳米开口上或上方的结构，以形成粒子堆积结构。 至少一些纳米点各自具有在其表面中形成的第二纳米开口，并且通过其晶体取向对准通过第二纳米开口彼此连接。 通过氧化基板以在其上形成半导体氧化膜的步骤，在氧化膜中形成第一纳米开口并外延生长以在第一纳米开口上堆叠多个纳米点来制造热电材料。 结果，可以提供热电转换性能优异的热电材料。

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