公开(公告)号：EP0671871A4

公开(公告)日：1997-05-21

申请号：EP94908129

申请日：1993-08-13

申请人： TAKASAGO THERMAL ENGINEERING ,  HAMAMATSU PHOTONICS KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  INABA HITOSHI ,  IKEDO TOMOYUKI

IPC分类号： H05F3/06 ,  A01G7/00 ,  E04H5/02 ,  H01L21/02 ,  H01L21/68

CPC分类号： H05F3/06

摘要： An apparatus and method for producing positive and negative ions and/or electrons in a gas of any atmosphere without producing dust, a method and structure for neutralizing a charged body in a short period of time and for completely preventing static electricity from being generated, and various apparatuses and structures, such as a conveyor, wet bench, and clean room, which use the neutralizing method and structure. The gaseous ion producing apparatus produces positive and negative ions and/or electrons in a gas by irradiating, with electromagnetic waves in a soft X-ray region, the gas under a high pressure, atmospheric pressure, or reduced pressure. In the neutralizing structure an X-ray unit is arranged at an appropriate place to apply the electromagnetic waves in a soft X-ray region to the atmospheric gas surrounding a charged body.

公开(公告)号：EP0685808A4

公开(公告)日：1997-05-14

申请号：EP94907085

申请日：1994-02-22

申请人： SHIBATA TADASHI ,  OHMI TADAHIRO

发明人： SHIBATA TADASHI ,  OHMI TADAHIRO ,  KOTANI KOJI

IPC分类号： G06F7/38 ,  G06F15/18 ,  G06N3/063 ,  G06N99/00 ,  H03K19/00 ,  H03K19/173 ,  G06G7/60

CPC分类号： G06F7/388 ,  G06N3/063 ,  G06N3/0635 ,  G06N99/005

摘要： A novel computing device capable of performing flexible information processing analogous to that of living things, such as learning, adaption, and self-multiplication, which are essential to implement advanced information processing of the future. The device comprises a plurality of first and second input terminals, and a plurality of operational units which execute a given operation of data signals to be inputted into the first input terminals, and each have at least one terminal for outputting the result of the operation. The output signal from one of the output terminals or the result of a given operational processing of this output signal is inputted into at least one of the second input terminals.

公开(公告)号：EP0644597A4

公开(公告)日：1995-12-20

申请号：EP93913479

申请日：1993-06-03

申请人： SHIBATA TADASHI ,  OHMI TADAHIRO

发明人： SHIBATA TADASHI ,  OHMI TADAHIRO

IPC分类号： H01L21/8247 ,  G06N3/063 ,  H01L27/10 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

CPC分类号： G06N3/0635 ,  H01L27/115

摘要： Using the title semiconductor device, a synapse circuit through which no steady-state current flows, whose positive and negative weights can be realized by a single 5-V current, and which has a self-learning function is realized. This semiconductor device comprises first and second power source lines which supply high and low two potentials a first NMOS having a first floating gate, and a second PMOS having a second floating gate. The source and drain of the first NMOS are connected to the second and first power source lines through third NMOS and fourth PMOS, respectively. The source and drain of the second PMOS are connected to the first and second power source lines through fifth PMOS and sixth NMOS, respectively. The sources of the first NMOS and second PMOS are connected to the thrid floating gate through first and second capacitors, respectively.

公开(公告)号：EP0594853A4

公开(公告)日：1995-05-31

申请号：EP92915840

申请日：1992-07-16

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  TAKANO JUN DEP OF ELECTRONICS

IPC分类号： G01N27/04 ,  G01N27/06

CPC分类号： G01N27/06

摘要： This invention consists in a device consisting of a vessel (1) containing chemical solution soluble in water, a sample room or sample itself (13), and electric conduction meter (3); and a method in which said chemical solution is brought into contact with the sample so as to absorb water adsorbed to the surface of the sample and then electric conductivity of said chemical solution is measured. By means of such a structure as above, water content having been adsorbed by the sample can be measured with high precision in a short period of time.

公开(公告)号：EP0598128A4

公开(公告)日：1995-05-17

申请号：EP92916817

申请日：1992-08-05

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： C23C14/54 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00 ,  H05H1/46 ,  H01L21/205

CPC分类号： H01J37/32935 ,  H05H1/46

摘要： A plasma processing apparatus, wherein the energy and density of ions impinging onto a base material can be controlled precisely and the process parameters can be controlled easily too. The apparatus comprises means (9, 12) for measuring the waveshape and value of a high-frequency electric power; a means (13) for calculating the energy and density of ions impinging onto the base material on the basis of the measured values; a means (13) for storing process parameters determined according to the state of a plasma; a means (13) for displaying the output of the storage means; a means (13) for setting the values of energy and density of ions; a means (13) for inputting the energy value and density value of ions to the setting means; and a means (14) for controlling the energy and density of the ions in the apparatus at the values set in the setting means.

摘要翻译： 一种等离子体处理装置，其中能够精确地控制冲击到基材上的离子的能量和密度，并且也可以容易地控制工艺参数。 该装置包括用于测量高频电力的波形和值的装置（9,12）; 基于测量值计算撞击到基材上的离子的能量和密度的装置（13）; 用于存储根据等离子体的状态确定的工艺参数的装置（13）; 用于显示存储装置的输出的装置（13）; 用于设定离子的能量和密度值的装置（13）; 用于将离子的能量值和浓度值输入到设定装置的装置（13） 以及用于以设定装置中设定的值控制装置中的离子的能量和密度的装置（14）。

公开(公告)号：EP0608421A4

公开(公告)日：1994-12-07

申请号：EP92921332

申请日：1992-10-15

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： B32B9/00 ,  B01J19/02 ,  B05D5/08 ,  B05D7/14 ,  B05D7/22 ,  B32B15/04 ,  B65D65/40 ,  B65D90/04 ,  C23C8/80 ,  C23C28/00 ,  C23F15/00 ,  F16L58/10 ,  B32B9/04 ,  B65D85/84

CPC分类号： F16L58/10 ,  B01J19/02 ,  B01J2219/0236 ,  B01J2219/024 ,  B01J2219/0277 ,  B05D5/083 ,  B05D7/14 ,  B05D7/22 ,  C23C8/80

摘要： A metallic material which is excellent in the resistance to chemical solution capable of composing a chemical solution treating device free of erosion on metallic piping, metallic devices, and metallic parts thereof as well as capable of controlling the flow rate of solution with high precision and free of pollution by chemical solution; and also intends to provide a chemical solution treating device or parts thereof using said metallic materials. The material is characterized by being provided with at least a basic member (101) composed of a metallic material, a metal fluoride layer or metal oxide layer (102) formed on the basic member (101) and fluorocarbon film (103) to cover said metal fluoride layer or metal oxide layer (102).

摘要翻译： 本发明提供一种耐药品性优异的金属材料，其能够在金属管道，金属器件及其金属部件上构成化学溶液处理装置而不会腐蚀，并且能够高精度且自由地控制溶液的流量 化学溶液污染; 并且还打算提供使用所述金属材料的化学溶液处理装置或其部件。 该材料的特征在于，在基材（101）和碳氟化合物膜（103）上形成至少由金属材料，金属氟化物层或金属氧化物层（102）构成的基础部件（101），以覆盖所述 金属氟化物层或金属氧化物层（102）。

公开(公告)号：EP0598124A4

公开(公告)日：1994-11-30

申请号：EP92914383

申请日：1992-07-02

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： B01D19/00 ,  C02F1/20 ,  C02F1/30 ,  H01L21/304

CPC分类号： B01D19/0078 ,  B01D19/0005 ,  B01D19/0031 ,  C02F1/20 ,  C02F1/30 ,  C02F2103/04

摘要： A method of cleaning, wherein nitrogen and oxygen dissolved in water are degassed and the wettability with water of the surface of a substrate, in particular, a silicon wafer from which the insulating film has been removed is improved, whereby pure water is brought into contact with the surface of silicon, so that even a very small amount of impurities on the silicon can be completely cleaned away, and a system for supplying the pure water. One feature resides in that, in the system for supplying the pure water, a means (10) for degassing nitrogen and oxygen contained in the water is provided in the intermediate portion of a piping for supplying the pure water to a use point (14). Further, another feature resides in that a vessel, in which the pure water and a gas can coexist, is provided between the degassing means and the use point, and the interior of the vessel is filled up with a gas not containing nitrogen and oxygen. Furthermore, a further feature resides in that, in the method of cleaning the gas, the substrate is cleaned by use of the pure water supplied from the system for supplying the pure water.

公开(公告)号：EP0694778A4

公开(公告)日：1994-03-04

申请号：EP92910179

申请日：1992-05-13

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： G01N25/14 ,  G01N1/40 ,  G01N13/02 ,  G01N33/38 ,  H01L21/304 ,  H01L21/306 ,  G01N13/00 ,  G01N1/28

CPC分类号： G01N13/02 ,  G01N1/40 ,  G01N2001/4027

摘要： A method and an apparatus for evaluating a segregation at a solid-liquid interface, capable of specifying and measuring quantitatively a segregation substance, that is, a substance which precipitates preferentially on a solid surface from a liquid or remains preferentially in the liquid (or elutes from the solid surface into the liquid), on the contrary. A reception table (2) having a shallow cup-like upper surface is disposed inside a container (1). After a predetermined inert gas is introduced into the container (1), a sample sheet (3) placed on the reception table (2) is downwardly curved by deformation means such as a vacuum suction mechanism. Thereafter, a predetermined solution is dropped onto the sample sheet (3) through a capillary (4) and the dropped solution is evaporated by a mercury lamp (7). After predetermined evaporation is completed, the sample sheet (3) is taken out from the container (1), and is analyzed by an appropriate one of measuring instruments attached to the apparatus. The instrument used depends on a segregation substance.

摘要翻译： 一种用于评估固 - 液界面偏析的方法和装置，其能够定量和定量地测定偏析物质，即优先在液体中沉淀在固体表面上或优先保留在液体中的物质（或洗脱液 从固体表面进入液体），相反。 具有浅杯状上表面的接收台（2）设置在容器（1）的内部。 在将预定的惰性气体引入到容器（1）中之后，放置在接收台（2）上的样品片（3）通过诸如真空抽吸机构的变形装置向下弯曲。 此后，通过毛细管（4）将预定的溶液滴落到样品片（3）上，并通过水银灯（7）蒸发掉滴下的溶液。 在完成预定的蒸发之后，将样品片（3）从容器（1）中取出，并通过安装在该装置上的适当的测量仪器进行分析。 使用的仪器取决于分离物质。 $$

公开(公告)号：EP1602978A4

公开(公告)日：2009-08-19

申请号：EP04710494

申请日：2004-02-12

申请人： NIHON CERATEC CO LTD ,  OHMI TADAHIRO

发明人： TAKEHISA KIWAMU ,  MORIYAMA SHIROU ,  SAKAMAKI MAKOTO ,  OHMI TADAHIRO

IPC分类号： G02F1/13 ,  C04B35/565 ,  C04B35/584 ,  C04B38/00 ,  G02F1/1343 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F7/70716 ,  C04B35/565 ,  C04B35/584 ,  C04B2235/36 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/9607 ,  G03F7/7095

摘要： A composite ceramic material with a honeycomb structure which is composed by adding glass into silicon carbide is used for a mask stage (2) and a substrate stage (12) in a exposure apparatus (100) for liquid crystal panels.

公开(公告)号：EP1130634A4

公开(公告)日：2009-07-08

申请号：EP00949896

申请日：2000-07-26

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/77 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/088 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H05H1/46 ,  H01L21/76

CPC分类号： H01L21/28194 ,  H01L21/28211 ,  H01L21/28238 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.