公开(公告)号：EP1675192A3

公开(公告)日：2006-07-05

申请号：EP05257880.4

申请日：2005-12-20

申请人： NGK INSULATORS, LTD.

发明人： Nanataki, Tsutomu, c/ Intell. Prop. Dept. ,  Kitagawa, Mutsumi, c/ Intell. Prop. Dept. ,  Kashiwaya, Toshikatsu, c/ Intell. Prop. Dept.

IPC分类号： H01L41/09 ,  H01L41/24 ,  B41J2/14

CPC分类号： B41J2/14233 ,  C04B35/493 ,  C04B2235/3206 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/6025 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/787 ,  H01L41/083 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/273

摘要： There is disclosed a piezoelectric/electrostrictive body which has superior piezoelectric/electrostrictive properties and which exhibits a sufficient durability even in a case where a flexural displacement is repeated a large number of times. A piezoelectric/electrostrictive body (30) is constituted of a large number of crystal grains (31) having the piezoelectric/electrostrictive properties in the form of a film or a layer having one or more layers. 80% or more of a large number of crystal grains (31) observed in an arbitrary section in the thickness direction of the body are grains exposed to at least one of interfaces (35a,35b) between the body and the outside in a thickness direction.

摘要翻译： 公开了一种具有优异的压电/电致伸缩性能的压电/电致伸缩体，即使在多次重复弯曲位移的情况下也具有足够的耐久性。 压电/电致伸缩体（30）由具有膜或具有一层或多层的层的形式的压电/电致伸缩特性的大量晶粒（31）构成。 在本体的厚度方向的任意截面中观察到的大量晶粒（31）的80％以上是在主体与外部之间的至少一个界面（35a，35b）的厚度方向上露出的晶粒 。

公开(公告)号：EP1381093A3

公开(公告)日：2006-04-12

申请号：EP03254404.1

申请日：2003-07-11

申请人： NGK INSULATORS, LTD.

发明人： Takahashi, Nobuo NGK Insulators, Ltd. ,  Bessho, Yuki NGK Insulators, Ltd. ,  Kobayashi, Nobuyuki NGK Insulators, Ltd. ,  Murasato, Masahiro NGK Insulators, Ltd.

IPC分类号： H01L41/09 ,  B41J2/14

CPC分类号： C04B35/493 ,  C04B2235/3206 ,  C04B2235/3227 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/785 ,  H01L41/0973 ,  H01L41/314

摘要： There is disclosed a piezoelectric/electrostrictive film device which has a flexural displacement and durability equal to or more than those of a related-art piezoelectric/electrostrictive film device and which has a remarkably high resonance frequency and which is superior in high-speed response. The piezoelectric/electrostrictive film device comprises: a substrate (44) formed of ceramic; and a piezoelectric/electrostrictive operation portion (78) including a lower electrode (77), piezoelectric/electrostrictive layer (73), and upper electrode (75) which are successively stacked on the substrate and including a projecting end of the piezoelectric/electrostrictive layer with which an upper surface of the lower electrode and a lower surface of the upper electrode are coated, and a projecting portion (79) of the piezoelectric/electrostrictive layer comprises a coupling member (70) constituted of a hybrid material in which inorganic particles are scattered in a matrix of a polymer compound, and is coupled to the substrate.

公开(公告)号：EP1630842A2

公开(公告)日：2006-03-01

申请号：EP05255199.1

申请日：2005-08-24

申请人： NGK INSULATORS, LTD.

发明人： Yamaguchi, Hirofumi, NGK Insulators, Ltd. ,  Sato, Kei, NGK Insulators, Ltd. ,  Kashiwaya, Toshikatsu, NGK Insulators, Ltd.

IPC分类号： H01J1/304 ,  H01J1/312

CPC分类号： H01J1/312 ,  B82Y10/00 ,  C04B35/493 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3227 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/764 ,  C04B2235/765 ,  H01J1/32 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

摘要： Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate (11); an emitter section (12) formed of a dielectric material; a first electrode (14) formed on the top surface of the emitter section; and a second electrode (16) formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.

摘要翻译： 本发明提供一种压电薄膜型电子发射器，其能够抑制由于重复使用而引起的电子发射量的降低，并且具有高耐久性。 该电子发射器包括衬底（11）; 由电介质材料形成的发射极部分（12） 形成在发射极部分的顶表面上的第一电极（14） 和形成在发射极部分的底表面上的第二电极（16）。 形成发射极部分的电介质材料包含具有电场感应应变（即，在施加4kV / mm的电场下的变形的百分比，在与电场垂直的方向上测量）为0.07％ 或更少。

公开(公告)号：EP1543568A2

公开(公告)日：2005-06-22

申请号：EP03769225.8

申请日：2003-09-29

申请人： EPCOS AG

发明人： GLAZOUNOV, Alexandre

IPC分类号： H01L41/107

CPC分类号： C04B35/493 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/658 ,  H01L41/0477 ,  H01L41/107 ,  H01L41/187

摘要： The invention relates to a piezoelectric transformer comprising at least two ceramic elements and a copper-based electrode which is arranged therebetween. The inventive ceramic elements are made of a compound containing Pb (Zrx Ti 1-x) O3 + y Pb (Mn1/3 Nb2/3 ) O3.

公开(公告)号：EP1519427A2

公开(公告)日：2005-03-30

申请号：EP04022480.0

申请日：2004-09-22

申请人： TDK Corporation

发明人： Azuma, Tomohisa,c/oTDK Corporation ,  Hirose, Masakazu,c/oTDK Corporation

IPC分类号： H01L41/24 ,  H01L41/187 ,  H03H3/04

CPC分类号： H03H9/02031 ,  C04B35/493 ,  C04B35/6262 ,  C04B35/6268 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/662 ,  H01L41/1876 ,  H01L41/253 ,  H01L41/257 ,  H01L41/43

摘要： There are provided steps of polarizing a ceramic composition including a perovskite compound containing Pb, Zr, Ti and Mn as main components and a heat treatment step for keeping the polarized ceramic composition within a temperature range lower than Tc (Tc denoting the Curie temperature of the ceramic composition) for 1 to 100 minutes.

公开(公告)号：EP1400498A3

公开(公告)日：2004-06-09

申请号：EP03254745.7

申请日：2003-07-29

申请人： BROTHER KOGYO KABUSHIKI KAISHA

发明人： Mizuno, Shigeru, c/o Brother Kogyo K.K.

IPC分类号： C04B35/499 ,  C04B35/493 ,  H01L41/187

CPC分类号： H01L41/187 ,  B41J2/14209 ,  B41J2002/14217 ,  B41J2002/14225 ,  B41J2002/14306 ,  B41J2002/14491 ,  B41J2202/20 ,  C04B35/493 ,  C04B35/499

摘要： A piezoelectric ceramic composition comprises a composite perovskite type oxide of Pb(Ni 1/3 Nb 2/3 )O 3 and simple perovskite type oxides of PbTiO 3 and PbZrO 3 as main components. The composition range of the main components exists in an area surrounded by lines for connecting respective composition points, i.e., a point A (X = 40, Y = 37, Z = 23), a point B (X = 36, Y = 37, Z = 27), a point C (X = 33, Y = 40, Z = 27), and a point D (X = 37, Y = 40, Z = 23) in a triangular coordinate system defined by apexes of Pb(Ni 1/3 Nb 2/3 )O 3 , PbTiO 3 , and PbZrO 3 , provided that Pb(Ni 1/3 Nb 2/3 )O 3 amounts to X molar %, PbTiO 3 amounts to Y molar %, and PbZrO 3 amounts to Z molar %. The composition makes it possible to realize a large strain amount while suppressing the relative dielectric constant to be low. The composition is preferably usable for an piezoelectric actuator of an ink-jet head.

公开(公告)号：EP1382587A1

公开(公告)日：2004-01-21

申请号：EP02705068.1

申请日：2002-03-04

申请人： TDK Corporation

发明人： SASAKI, Satoshi c/o TDK Corporation

IPC分类号： C04B35/49 ,  H01L41/187

CPC分类号： H01L41/187 ,  C04B35/493 ,  C04B35/6262 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2235/96 ,  H01L41/083

摘要： Provided are a piezoelectric ceramic and a piezoelectric device having a larger piezoelectric strain constant and capable of being fired at a lower temperature. A main component of Pb A [(Mg 1/3 Nb 2/3 ) a (Zn 1/3 Nb 2/3 ) b Ti c Zr d ]O 3 (a+b+c+d=1, 0.99≦A≦ 1.01, 0.15≦a+b≦0.5, 0.05≦b≦0.25, 0.2≦c≦0.5, 0.15≦d≦0.6) and 0.01 mass% to 0.8 mass% inclusive of at least one kind selected from the group consisting of Fe, Co, Ni and Cu in the form of oxide per 1 mol of the main component as a first sub-component are comprised. Thereby, a larger piezoelectric strain constant can be obtained, and a firing temperature can be reduced. In the main component, a part of Pb may be replaced with at least one kind selected from the group consisting of Ca, Sr and Ba. Further, as a second sub-component, 0.05 mass% to 1.0 mass% inclusive of at least one kind selected from the group consisting of Sb, Nb and Ta in the form of oxide per 1 mol of the main component may be comprised.

摘要翻译： 提供了一种压电陶瓷和压电应变常数较大且能够在较低温度下烧制的压电器件。 PbAÄ（Mg1 / 3Nb2 / 3）a（Zn1 / 3Nb2 / 3）bTicZrd0O3（a + b + c + d = 1，0.99 <= = 1.01，0.15

公开(公告)号：EP0764992B1

公开(公告)日：2000-08-23

申请号：EP96114974.7

申请日：1996-09-18

申请人： SEIKO EPSON CORPORATION

发明人： Shimada, Masato ,  Takahashi, Tetsushi ,  Kamei, Hiroyuki ,  Qui, Hong

IPC分类号： H01L41/09 ,  H01L41/24 ,  B41J2/045

CPC分类号： H01L41/318 ,  B41J2/14233 ,  B41J2002/14258 ,  C04B35/493 ,  C04B35/6264 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3294 ,  C04B2235/3296 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/656 ,  C04B2235/661 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/80 ,  H01L41/0805 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： The present invention provides a thin piezoelectric film having a high piezoelectric strain constant and a good adhesion with a lower electrode which can be produced without being cracked. The present invention also provides an ink jet recording head comprising this thin piezoelectric film as a vibrator. The thin piezoelectric film element of the present invention comprises a PZT film 14 made of a polycrystalline substance, and an upper electrode 16 and a lower electrode 12 arranged with the PZT film interposed therebetween. The grain boundary of the crystalline constituting the PZT film is present almost perpendicular to the surface of the electrode. Further, the orientation of the crystalline constituting the PZT film is controlled to a desired range.

公开(公告)号：EP0928033A3

公开(公告)日：1999-08-04

申请号：EP99101630.4

申请日：1996-09-18

申请人： SEIKO EPSON CORPORATION

发明人： Shimada, Masato ,  Takahashi, Tetsushi ,  Kamei, Hiroyuki ,  Qui, Hong

IPC分类号： H01L41/09 ,  B41J2/045

CPC分类号： H01L41/318 ,  B41J2/14233 ,  B41J2002/14258 ,  C04B35/493 ,  C04B35/6264 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3294 ,  C04B2235/3296 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/656 ,  C04B2235/661 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/80 ,  H01L41/0805 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： The present invention provides a thin piezoelectric film having a high piezoelectric strain constant and a good adhesion with a lower electrode which can be produced without being cracked. The present invention also provides an ink jet recording head comprising this thin piezoelectric film as a vibrator. The thin piezoelectric film element of the present invention comprises a PZT film 14 made of a polycrystalline substance, and an upper electrode 16 and a lower electrode 12 arranged with the PZT film interposed therebetween. The piezoelectric film has pores (20) with an average diameter of not less than 0.01 µm and a surface density of not less than 0.3%.

摘要翻译： 本发明提供一种压电应变常数高且与不产生裂纹的下部电极的密合性良好的压电薄膜。 本发明还提供一种包含该薄压电膜作为振动器的喷墨记录头。 本发明的薄压电薄膜元件包括由多晶物质制成的PZT薄膜14，以及布置有PZT薄膜的上电极16和下电极12。 压电膜具有平均直径不小于0.01μm且表面密度不小于0.3％的孔（20）。

公开(公告)号：EP0619279B1

公开(公告)日：1997-11-05

申请号：EP94103270.8

申请日：1994-03-04

申请人： CeramTec AG Innovative Ceramic Engineering

发明人： Helke, Günter, Dr. ,  Langer, Hans-Joachim

IPC分类号： C04B35/49

CPC分类号： H01L41/187 ,  C04B35/493