摘要:
There is provided an AC power supply for a sputtering apparatus in which the AC power supply can prevent the induction of an arc discharge by suppressing an overvoltage to be generated when the polarity of each electrode is reversed. A bridge circuit 3 made up of a plurality of switching transistors SW1 - SW4 is disposed between positive and negative DC current output lines 2a and 2b from a DC electric power supply source 1. An inductor DCL which makes a DC output to have a constant-current characteristic is disposed in at least one of the positive and the negative DC output lines 2a and 2b from the DC electric power supply source 1 to the bridge circuit 3, and a snubber circuit 7 is disposed in parallel with inputs 3a and 3b of the bridge circuit 3.
摘要:
Methods and systems of arc suppression during RF sputtering of a thin film from a semiconducting target 104 onto a substrate 12 are provided. During sputtering, an alternating current of RF frequency can be applied to a semiconducting target 104 to form a plasma 110. Upon formation of an arc 112 extending from the target 104, an arc signature can be detected, where the arc signature is simultaneously defined by decreasing plasma voltage from an initial sputtering plasma voltage to an arc plasma voltage and increasing reflective power from an initial sputtering reflective power to an arc reflective power. Upon identification of the arc signature, the alternating current can be temporarily interrupted to the semiconducting target 104 to suppress the arc 112 extending from the target 104. Thereafter, the alternating current from the electrical power supply 102 can be reapplied to the semiconducting target 104.
摘要:
A power supply device for sputtering which enables improvement in step coverage and improvement in fineness of a sputtering film, by realizing stable sputtering at a voltage not higher than a starting voltage, thereby reducing scattering of sputtering particles due to collision with a sputtering inert gas. The power supply device for sputtering includes a DC power source for sputtering (A), a constant-current circuit (B) connected with the DC power source, a sputtering source (21) connected with the constant-current circuit (B), and a controller (11) for controlling a current outputted from the constant-current circuit (B) to be a constant current.
摘要:
The invention relates to a device and to a method for pretreating and coating bodies by magnetron atomization. Said device comprises a vacuum chamber with metal chamber walls (26) and magnetrons with sputter-targets are arranged in said vacuum chamber, at least one magnetron being an HPPMS magnetron to which electric impulses are fed such that a capacitive element (6) is connected by a switch element (5) to the sputter-target of the HPPMS-magnetron. According to a first aspect of the invention, in order to effectively pretreat and coat substrates, the switch element is arranged on the chamber wall.
摘要:
In a method of limiting the current (I out ) flowing between a plasma chamber (3) and a power supply (2), wherein the current change di/dt is limited if the current exceeds a predetermined current by a by a current change limiting device (7, 40) which is provided in the current path between the power supply (2) and the plasma chamber (3).
摘要:
A module, such as a pump module or a sputtering module, comprises a lid assembly sufficient to fit or to cover a compartment, such as a pump compartment or a sputtering compartment, of a coating system, such as a modular coating system. A sputtering module comprises a power supply unit and is sufficient for receiving an electrical input and for delivering an electric output sufficient for sputtering in a sputtering compartment. A pump module, it comprises at least one pump and is sufficient for receiving an electrical input sufficient for operating the pump or pumps. Various connections between the module, external supplies, components or devices, and the compartment may be made automatically and/or manually. A control connection may be such that an external controller or a central controller is able to recognize a particular module that is associated with a particular compartment of the coating system.
摘要:
In producing discharges in a load element such as a magnetron sputtering device, electric pulses are provided from different electric pulse sources, e.g. three or more electric pulse sources. The pulse sources are controlled by a control and monitoring unit to give the element electric pulses different heights and start and end times. The element electric pulses are summed, such as by connecting the pulse sources in parallel to the load, to form resulting, relatively long electric pulses. Each of the resulting electric pulses can have a portion that has a substantially constant level and then the substantially constant level is formed from at least two element electric pulses having the same pulse height. The resulting electric pulses are applied to electrodes in the load. The element electric pulses can have the same polarity such as being half a period of a sinusoid oscillation of a single frequency. Then the time intervals between starts of successive element electric pulses are relatively short such as not being not larger than one third of the period of the sinusoid. For example, the resulting electric pulses can have a substantially rectangular shape, a shape including two different substantially constant levels or have a substantially triangular shape.
摘要:
The invention relates to the deposition, in a magnetron reactor (1) fitted with a magnetron cathode (CM), of at least one material on a substrate (11a), said material being vaporized, by means of magnetron cathodic pulverization, with the aid of a gas which is ionized in a pulsed mode. In order to promote the formation of high current pulses of a short duration, while avoiding the formation of arcs and enabling efficient ionization of the pulverized vapor, the gas is preonized prior to application of the main voltage pulse to the magnetron cathode (CM) such that it is possible to generate current pulses (IC) whose duration of decline (Td) is less than 5µs after interruption of the main voltage pulse (IT).
摘要:
A plasma source includes a chamber for containing a feed gas. An anode is positioned in the chamber. A segmented magnetron cathode comprising a plurality of electrically isolated magnetron cathode segments is positioned in the chamber proximate to the anode. A power supply is electrically connected to an electrical input of a switch. A respective one of the plurality of electrical outputs of the switch is electrically connected to a respective one of the plurality of magnetron cathode segments. The power supply generates a train of voltage pulses that ignites a plasma from the feed gas. Individual voltage pulses in the train of voltage pulses are routed by the switch in a predetermined sequence to at least two of the plurality of magnetron cathode segments.
摘要:
A method and an apparatus are disclosed for sputter deposition of an insulating material on a substrate (3) in a continuous mode of operation. A novel design for an anode assembly and driving power supply is disclosed to permit this. Single or multiple anodes (11 and 12) are used, which at any given time may be biased negatively with respect to the plasma (2), so that any insulating material which may have been deposited thereupon may be sputtered away so as to provide a clean positive anode to the system, and at least for some period of time is biased positively so that it acts as an anode. The removal of any insulating material which may have formed on the anode structure permits its continuing effective use in collecting electrons from the plasma when it is biased positively, and therefore its continuing effective use as an anode for the system, permitting continuous operation of the system.