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    PROCESS FOR ANNEALING III-V COMPOUND SEMICONDUCTOR MATERIAL
    85.
    发明公开
    PROCESS FOR ANNEALING III-V COMPOUND SEMICONDUCTOR MATERIAL 失效
    用于退火III-V化合物半导体材料的方法

    公开(公告)号：EP0226311A3

    公开(公告)日：1988-09-21

    申请号：EP86308475

    申请日：1986-10-30

    申请人： GTE LABORATORIES INCORPORATED

    发明人： PRINCE, FRANCISCO C. ,  ARMIENTO, CRAIG A.

    IPC分类号： C23C14/48 ,  H01L21/265 ,  H01L21/324

    CPC分类号： H01L21/3245 ,  Y10S148/065 ,  Y10S148/084

    摘要： A method of rapid thermal annealing a wafer (10) of an ion implanted III-V compound semiconductor material by heating the wafer (10) in close proximity to a III-V compound semiconductor wafer (13) coated with a layer (14) of tin or indium. A localized overpressure of the Group V element is produced by the combination of the III and V elements with the tin or indium tending to reduce surface decomposition of the implanted wafer.

    摘要翻译： 通过将晶片靠近涂覆有锡或铟层的III-V化合物半导体晶片加热晶片，快速热退火离子注入III-V族化合物半导体材料的晶片的方法。 通过III和V元素与锡或铟的组合产生V族元素的局部超压，倾向于减少注入晶片的表面分解。

    Thin film forming device
    86.
    发明公开
    Thin film forming device 失效
    Vorrichtung zur Ausbildung einesdünnenFilmes。

    公开(公告)号：EP0253361A1

    公开(公告)日：1988-01-20

    申请号：EP87110160.6

    申请日：1987-07-14

    申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

    发明人： Ito, Hiroki c/o Mitsubishi Denki K.K. ,  Ina, Teruo c/o Mitsubishi Denki K.K.

    IPC分类号： C23C14/48 ,  C23C14/24 ,  C23C14/34 ,  C23C16/44 ,  H01L21/203

    CPC分类号： C23C16/452 ,  C23C16/487 ,  C23G5/00

    摘要： A thin film forming device comprises a vacuum tank (1 a) held at the predetermined degree of vacuum; a substrate (2) placed in the vacuum tank; an internal tank (32) disposed in the vacuum tank (1 a) and having an opening opposite to the substrate (2); gas jet nozzles (33,34) arranged in the internal tank (32) and connected with reactive gas sources (6, 7) outside the vacuum tank (1a) for jetting reactive gases of different types toward the substrate (2) through the opening of the internal tank (32); and electron beam irradiation means (37) disposed close to a passage, through which the reactive gases jetted from the gas jet nozzles (33, 34) pass, for irradiating electron beams to the reactive gases.

    摘要翻译： 薄膜形成装置包括保持在预定真空度的真空槽（1a）; 放置在真空槽中的基板（2） 设置在所述真空容器（1a）中并具有与所述基板（2）相对的开口的内部容器（32）; 布置在内部储罐（32）中并与真空罐（1a）外部的反应性气体源（6,7）连接的气体喷嘴（33,34），用于通过开口向衬底（2）喷射不同类型的反应性气体 的内部容器（32）; 以及靠近通道的电子束照射装置（37），从气体喷嘴（33,34）喷射的反应气体通过该通道，用于将电子束照射到反应气体。

    Surface treatment of metals
    87.
    发明公开
    Surface treatment of metals 失效
    表面处理的金属。

    公开(公告)号：EP0175538A1

    公开(公告)日：1986-03-26

    申请号：EP85306421.0

    申请日：1985-09-10

    申请人： UNITED KINGDOM ATOMIC ENERGY AUTHORITY

    发明人： Dearnaley, Geoffrey

    IPC分类号： C23C14/48

    CPC分类号： C23C26/00 ,  C23C10/00 ,  C23C14/48 ,  C23C28/00

    摘要： 57 A process for hardening the surface of a metal body in which the surface is first bombarded with ions capable of occupying interstitial sites in its crystal lattice, the a coating of a reactive metal is deposited on the surface, and finally the coating is bombarded with ions which will react with it to form a hard material such as a carbide or nitride. The bombardment is continued until the hard material has become embodied in the surface by means of radiation enhanced diffusion.

    Method for ion-implanting metal elements
    90.
    发明公开
    Method for ion-implanting metal elements 失效
    一种用于金属元素的离子注入法。

    公开(公告)号：EP0066288A1

    公开(公告)日：1982-12-08

    申请号：EP82104791.7

    申请日：1982-06-01

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Kirita, Kei ,  Koike, Katuo

    IPC分类号： C23C14/48

    CPC分类号： C23C16/513 ,  B01J19/088 ,  H01J27/22

    摘要： The invention provides a method for producing metal ions (26), having the steps of: producing a gas (1a) containing a metal element by evaporation of a liquid organic metal compound (1); introducing the gas (1a) containing the metal element and an auxiliary gas (2) for cleaning into the ionization chamber (8); and producing the metal ions (26) by ionizing the metal element by a discharge. According to this method, the metal ions are produced easily and quickly with good controllability.