利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

181 条记录 (耗时 0.019 秒)

    MAGNETIC THIN FILM OR COMPOSITE MAGNETIC THIN FILM FOR HIGH FREQUENCY AND MAGNETIC DEVICE INCLUDING THE SAME
    82.
    发明公开
    MAGNETIC THIN FILM OR COMPOSITE MAGNETIC THIN FILM FOR HIGH FREQUENCY AND MAGNETIC DEVICE INCLUDING THE SAME 审中-公开
    DÜNNERMAGNETFILM ODER ZUSAMMUSTRETZTERDÜNNERMAGNETFILMFÜRHOCHFREQUENZ UND MAGNETVORRICHTUNG DAMIT

    公开(公告)号：EP1585149A1

    公开(公告)日：2005-10-12

    申请号：EP03780982.9

    申请日：2003-12-22

    申请人： TDK Corporation

    发明人： CHOI, Kyung-Ku, TDK Corporation ,  MURASE, Taku, TDK Corporation

    IPC分类号： H01F10/16 ,  H01F10/13 ,  H01F17/04 ,  H01F17/00

    CPC分类号： H01L27/08 ,  H01F10/132 ,  H01F10/16 ,  H01F10/265 ,  H01F17/0006 ,  H01F41/046 ,  Y10T428/3183

    摘要： There can be obtained a magnetic thin film for high frequency 1 which has both a high permeability and a high saturation magnetization by combining a T-L composition layer 5 comprising a T-L composition, wherein T is Fe or FeCo, and L is at least one element selected from the group consisting of C, B and N, with a Co based amorphous alloy layer 3 disposed on either of the surfaces of the T-L composition layer 5. Further, there can be obtained a magnetic thin film for high frequency 1 which has both a high permeability and a high saturation magnetization, and at the same time has a high resistivity by further providing the magnetic thin film with, in addition to the T-L composition layer 5 and the Co based amorphous alloy layer 3, a high resistance layer 7 having an electric resistance higher than the T-L composition layer 5 and the Co based amorphous alloy layer 3.

    摘要翻译： 通过组合包含TL组合物的TL组合物层5，其中T是Fe或FeCo，并且L是选择的至少一种元素，可以获得具有高磁导率和高饱和磁化强度的高频1磁性薄膜 从由C，B和N组成的组中，与配置在TL组合物层5的任一表面上的Co基非晶态合金层3构成。此外，可以得到高频1的磁性薄膜，其具有 高磁导率和高饱和磁化强度，同时通过进一步提供磁性薄膜，除了TL组合物层5和Co基非晶合金层3之外，还具有高电阻层7，高电阻层7具有 电阻高于TL组合物层5和Co基非晶态合金层3.

    MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    83.
    发明公开
    MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    磁存储设备及其制造方法

    公开(公告)号：EP1489660A4

    公开(公告)日：2005-09-28

    申请号：EP03715413

    申请日：2003-03-26

    申请人： SONY CORP

    发明人： MOTOYOSHI MAKOTO ,  IKARASHI MINORU

    IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/68 ,  H01L29/82 ,  H01L43/08

    CPC分类号： G11C11/16 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A magnetic memory device capable of improving write characteristic by providing a magnetic flux concentrator which can apply a current magnetic field generated by a write word line effectively to the storage layer of a TMR element. The magnetic memory device (1) includes the TMR element (13), a write word line (first wire) (11) electrically insulated from the TMR element (13), and a bit line (second wire) (12) to be electrically connected to the TMR element (13) and three-dimensionally intersecting the write word line (11) via the TMR element (13). The device further includes a magnetic flux concentrator (51) composed of a highly permeable layer arranged on both sides of the write word line (11) and along the surface of the write word line (11) opposite to the surface opposing to the TMR element (13). At least one of the side walls of the magnetic flux concentrator (51) is formed to protrude toward the TMR element (13) side from the write word line (11).

    MAGNETIC RECORDING MEDIUM
    84.
    发明公开
    MAGNETIC RECORDING MEDIUM 失效
    MAGNETISCH AUFZEICHNUNGSMEDIUM

    公开(公告)号：EP0971340A4

    公开(公告)日：2000-03-22

    申请号：EP97908547

    申请日：1997-03-28

    申请人： TAKAHASHI MIGAKU

    发明人： TAKAHASHI MIGAKU ,  NAKAI JUNICHI

    IPC分类号： G11B5/64 ,  G11B5/73 ,  G11B5/66 ,  H01F10/16

    CPC分类号： G11B5/7325 ,  G11B5/656 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/12854

    摘要： A magnetic recording medium having a high coercive force of a ferromagnetic metal layer, a high anisotropic magnetic field and/or normalized coercive force, and adaptable to high density recording. The magnetic recording medium comprises a substrate and a ferromagnetic metal layer containing at least Co and Cr formed thereon via a metallic underlying layer of Cr. Magnetic inversion is utilized for the recording. A region (1) which penetrates through the ferromagnetic metal layer and in which Cr is segregated are formed among the crystalline particles constituting the ferromagnetic metal layer. The Cr concentration in the intermediate portions of the region (1) in the direction of thickness of the ferromagnetic metal layer is smaller than that of the portions near the surface and near the metallic underlying layer. The crystalline particles of the ferromagnetic metal layer are constituted by a region (2) in which the Cr concentration increases toward the grain boundary and a region (3) which is formed at the center of the crystalline particle and whose Cr concentration is lower than that near the grain boundary. The maximum Cr concentration in the region (3) is smaller than the maximum Cr concentration in the region (2).

    摘要翻译： 一种磁记录介质，具有强磁性金属层的高矫顽力，高各向异性磁场和/或归一化矫顽力，并适用于高密度记录。 该磁记录介质包括衬底和通过Cr的金属底层在其上至少包含Co和Cr的铁磁金属层。 磁性反转用于记录。 在构成强磁性金属层的结晶粒子中，形成贯穿强磁性金属层且Cr偏析的区域（1）。 区域（1）的铁磁性金属层的厚度方向的中间部分的Cr浓度比表面附近的金属基底层附近的Cr浓度小。 强磁性金属层的结晶粒子由Cr浓度向晶界增大的区域（2）和在结晶粒子的中心形成的Cr浓度低于该浓度的区域（3）构成 靠近晶界。 区域（3）中的最大Cr浓度小于区域（2）中的最大Cr浓度。

    Thick deposited cobalt platinum magnetic film and method of fabrication thereof
    87.
    发明授权
    Thick deposited cobalt platinum magnetic film and method of fabrication thereof 失效
    具有磁性膜和厚度的方法，用于制造其的钴铂层。

    公开(公告)号：EP0463002B1

    公开(公告)日：1994-06-01

    申请号：EP90904171.7

    申请日：1990-03-02

    申请人： EASTMAN KODAK COMPANY

    发明人： BRUCKER, Charles, Frederick ,  SPADA, Frederick, Edson

    IPC分类号： G11B5/64 ,  H01F10/16

    CPC分类号： H01F10/30 ,  G11B5/82 ,  H01F10/16 ,  H01F41/18 ,  Y10S428/928 ,  Y10T428/1284 ,  Y10T428/12854 ,  Y10T428/12861

    摘要： A 3,000-10,000 angstrom thick cobalt-platinum (CoPt) magnetic film is deposited onto a chromium (Cr) or tungsten (W) overlayer on a substrate (16), or is deposited directly onto the substrate (16). The deposited film has an appreciable component of its C-axis, which is parallel to the [00.2] direction, lying in the plane of the film. The component of the C-axis lies in the plane of the film throughout the entire thickness of the CoPt film, and the resultant magnetic film has a coercivity from 1,300-2,000 oersteds, depending upon which, if any, overlayer is included. The method for producing the magnetic film of the invention teaches sputtering the overlayer onto a substrate (16) maintained approximately at room temperature in an atmosphere of inert gas. After adjusting the pressure of the gas and controlling the distance (40) between the CoPt (34) sputtering target and the substrate (16), CoPt is sputtered such that the depositing Co and Pt atoms are thermalized while traversing the distance between the target (34) and the substrate (16). The film as deposited is magnetically isotropic in the plane, and may be configured as a permanent magnet having a resultant magnetization in the plane by exposure to an external magnetizing field oriented along the film plane.