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392 条记录 (耗时 0.023 秒)

    HIGH FREQUENCY SWITCHING DEVICE, AND BIAS VOLTAGE OUTPUTTING DEVICE
    81.
    发明公开
    HIGH FREQUENCY SWITCHING DEVICE, AND BIAS VOLTAGE OUTPUTTING DEVICE 审中-公开
    麻省理工学院霍华德·弗朗西斯·史密斯·VORRICHTUNG VORSPANNUNGSAUSGABEVORRICHTUNG

    公开(公告)号：EP2717473A1

    公开(公告)日：2014-04-09

    申请号：EP12788866.7

    申请日：2012-05-23

    申请人： Imagineering, Inc.

    发明人： MAKITA Minoru ,  IKEDA Yuji

    IPC分类号： H03K17/76 ,  H01P1/15 ,  H03K17/693

    CPC分类号： H03K17/04 ,  H01P1/15 ,  H01P5/16 ,  H03K17/76

    摘要： In a high frequency switch device 33 that switches an output terminal 42 , from which high frequency is outputted, from among a plurality of output terminals 42, to perform the switching the output terminal 42, from which high frequency is outputted, at high speed and with low loss. In the high frequency switch device 33, a branch transmission line 45 corresponding to each output terminal 42 is provided with a switching part 46. In the branch transmission line 45, the switching part 46 includes a transmission side diode 63 that is provided in such a manner that a cathode thereof is arranged on a side of an input terminal 41 and an anode thereof is arranged on a side of the output terminal 42, and a ground side diode 65 that is provided in such a manner that a cathode thereof is grounded and an anode thereof is electrically connected between the output terminal 42 and the transmission side diode 63 in the branch transmission line 45. The branch transmission line 45 includes a first capacitor 51 and a second capacitor 52 on the side of the output terminal 42 from the transmission side diode 63 in such a manner that the anode of the ground side diode 65 is connected between the first capacitor 51 and the second capacitor 52.

    摘要翻译： 在从多个输出端子42中切换从其输出高频的输出端子42的高频开关装置33中，高速输出高频的输出端子42进行切换， 低损失。 在高频开关装置33中，对应于每个输出端子42的分支传输线45设置有开关部分46.在分支传输线路45中，开关部分46包括：发射侧二极管63， 其阴极布置在输入端子41的一侧，其阳极布置在输出端子42的一侧，接地侧二极管65以使其阴极接地和 其阳极电连接在分支传输线45中的输出端子42和发送侧二极管63之间。分支传输线路45包括来自传输的输出端子42侧的第一电容器51和第二电容器52 以使得接地侧二极管65的阳极连接在第一电容器51和第二电容器52之间的方式。

    CIRCUIT DE COMMUTATION POUR DES SIGNAUX LARGE BANDE
    84.
    发明公开
    CIRCUIT DE COMMUTATION POUR DES SIGNAUX LARGE BANDE 有权
    电路是否对宽带信号

    公开(公告)号：EP2462701A1

    公开(公告)日：2012-06-13

    申请号：EP10739944.6

    申请日：2010-08-05

    申请人： Thales

    发明人： CHAHBAZIAN, Frank ,  GERFAULT, Bertrand

    IPC分类号： H04B1/48 ,  H01P1/15

    CPC分类号： H04B1/48 ,  H01P1/15 ,  H01P5/026

    摘要： The present invention relates to a switching circuit for controlling the passage of a radiofrequency signal between a first input/output (101) and a second input/output (105), said circuit including at least one diode (D2) between said inputs/outputs (101, 105), said diode (D2) being polarized by a DC voltage source (Vdc2) via at least two crossed transmission lines (110, 120) interconnecting said diode (D2) with said DC voltage source (Vdc2). The invention can be used in particular for radiocommunication systems, in particular to power systems.

    MATRIX SWITCH
    85.
    发明授权
    MATRIX SWITCH 有权

    公开(公告)号：EP1727230B1

    公开(公告)日：2012-05-23

    申请号：EP06715331.2

    申请日：2006-03-07

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： KAMITSUNA, Hideki

    IPC分类号： H01P1/15 ,  H01L27/095 ,  H03K17/00

    CPC分类号： H01P1/15

    摘要： Four SP4T switches (31 to 34) are grouped into two pairs so as to constitute two switch pairs. Four first conductor wires (411 to 414, 421 to 424) are respectively arranged between the SP4T switches (31 and 34, 32 and 33) constituting the switch pairs. Four second conductor wires (51 to 54) are connected to each one of the wires arranged in each of the switch pairs among the first conductor wires. The first and the second conductor wires are arranged on a dielectric layer having a lower surface on which a grounding conductor (6) is formed. The dielectric layer has a 2-layer configuration. The first conductor wires a re arranged on the first dielectric layer as a lower layer while the second conductor wires are arranged on the second dielectric layer as an upper layer. With this configuration, it is possible to reduce the size of the matrix, reduce the loss, and enable a wide-band operation.

    摘要翻译： 四个SP4T开关（31到34）分成两对，以构成两个开关对。 在构成开关对的SP4T开关（31和34,32和33）之间分别布置有四条第一导线（411至414,421至424）。 四条第二导线（51至54）连接到布置在第一导线中的每个开关对中的每条导线。 第一导线和第二导线布置在具有其上形成接地导体（6）的下表面的介电层上。 介电层具有2层结构。 第一导线重新布置在第一介电层上作为下层，而第二导线布置在第二介电层上作为上层。 通过这种配置，可以减小矩阵的尺寸，减少损耗，并实现宽带操作。

    High-frequency device, high-frequency module and communications device comprising them
    87.
    发明公开
    High-frequency device, high-frequency module and communications device comprising them 审中-公开
    Hochfrequenzvorrichtung，Hochfrequenzmodul und damit versehenesKommunikationsgerät

    公开(公告)号：EP2287963A2

    公开(公告)日：2011-02-23

    申请号：EP10014753.7

    申请日：2003-09-17

    申请人： Hitachi Metals, Ltd.

    发明人： Hayashi, Kenji

    IPC分类号： H01P1/15

    CPC分类号： H04B1/0057 ,  H01P1/15 ,  H03H7/463 ,  H03H2001/0085 ,  H04B1/18 ,  H04B1/48 ,  H04B1/525

    摘要： A high-frequency device comprises a high-frequency amplifying circuit (HPA1, HPA2), and a high-frequency circuit disposed downstream of said high-frequency amplifying circuit (HPA1, HPA2) for treating a high-frequency signal amplified by said high-frequency amplifying circuit (HPA1, HPA2), wherein said high-frequency amplifying circuit (HPA1, HPA2) comprises a semiconductor element (Q1) and an output matching circuit (MN), said high-frequency circuit comprises a switch circuit (SW1, SW2) for switching connection to transmitting systems and receiving systems, and an impedance matching between said high-frequency amplifying circuit (HPA1, HPA2) and said high-frequency circuit is achieved by said output matching circuit (MN). A phase θ 2 of an impedance Z 2 of each of said high-frequency circuit when viewed from a connection reference plane between said switch circuit (SW1, SW2) and said output matching circuit (MN) is adjusted in a range of -125° to +90° (-125° to -180° and +90° to +180° from 0 point on a Smith chart) in a necessary fundamental frequency band of said high-frequency signal to suppress the amount of variation of the input impedance of said output matching circuit (MN) in the fundamental frequency band.

    摘要翻译： 高频器件包括高频放大电路（HPA1，HPA2）和设置在所述高频放大电路（HPA1，HPA2）下游的高频电路，用于处理由所述高频放大电路放大的高频信号， 高频放大电路（HPA1，HPA2），其中所述高频放大电路（HPA1，HPA2）包括半导体元件（Q1）和输出匹配电路（MN），所述高频电路包括开关电路（SW1，SW2 ），用于切换到发送系统和接收系统的连接，并且所述高频放大电路（HPA1，HPA2）与所述高频电路之间的阻抗匹配由所述输出匹配电路（MN）实现。 当从所述开关电路（SW1，SW2）和所述输出匹配电路（MN）之间的连接基准面观察时，所述高频电路中的每一个的阻抗Z 2的相位¸2被调整在-125° 在所述高频信号的必要的基本频带中，至+ 90°（-125°至-180°，+ 0°至+ 180°，从史密斯圆图0°），以抑制输入阻抗的变化量 的所述输出匹配电路（MN）。

    PIN DIODE NETWORK FOR MULTIBAND RF COUPLING
    90.
    发明公开
    PIN DIODE NETWORK FOR MULTIBAND RF COUPLING 审中-公开
    用于多频RF耦合的PIN二极管网络

    公开(公告)号：EP2016641A2

    公开(公告)日：2009-01-21

    申请号：EP07755519.1

    申请日：2007-04-12

    申请人： Ruckus Wireless, Inc.

    发明人： SHTROM, Victor

    IPC分类号： H01P1/15

    CPC分类号： H01P1/15 ,  H03H5/12 ,  H03H7/25 ,  H03K17/74

    摘要： A PIN diode network includes a PIN diode (250) in parallel with an inductor (Ll 220; L2 230). In an off-state of the PIN diode (250) the inductor (Ll 220; L2 230) forms a resonant tank circuit with the PIN diode (250) based on the stray capacitance of the PIN diode. Thus at the operating frequency, isolation for the PIN diode is improved over the PlN diode alone.

    摘要翻译： PIN二极管网络包括与电感器（L1 220; L2 230）并联的PIN二极管（250）。 在PIN二极管（250）的关闭状态下，基于PIN二极管的杂散电容，电感器（L1 220; L2 230）与PIN二极管（250）形成谐振回路电路。 因此在工作频率下，PIN二极管的隔离度比单独的PlN二极管有所提高。