摘要:
A substrate holder for use in a lithographic apparatus. The substrate holder comprises a main body (400) and a plurality of burls provided on the main body and having end surfaces to support a substrate. The burls each comprise a lower portion (406a) protruding from the main body and an upper portion (406b) above the lower portion. The lower portions are a different material than the upper portions, the upper portions comprise diamond-like carbon, and the upper portions are separated from each other.
摘要:
A liquid immersion lithography system includes projection optics (PL) and a showerhead (604). The projection optics are configured to expose a substrate (W) with a patterned beam. The showerhead includes a first nozzle (610) and a second nozzle (612) that are configured to be at different distances from a surface of the substrate during an exposure operation.
摘要:
An object holder (100) for a lithographic apparatus has a main body (400) having a surface (400a). A plurality of burls (406) to support an object are formed on the surface or in apertures of a thin-film stack (410, 440, 450). At least one of the burls is formed by laser-sintering. At least one of the burls formed by laser-sintering may be a repair of a damaged burl previously formed by laser-sintering or another method.
摘要:
The disclosure relates to substrate tables for lithography and methods of handling a substrate. In one arrangement, a substrate table comprises one or more membranes. An actuation system deforms each membrane to change a height of a portion of the membrane. In another arrangement, a substrate table comprises one or more membranes and a clamping system for clamping a substrate to the substrate table, wherein the clamping deforms each membrane by pressing the substrate against the membrane.
摘要:
A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam (E) along a first path towards a first side of the target (30) and to direct a second portion of the electron beam (E) along a second path towards a second side of the target (30).