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    Microwave plasma chemical deposition process for the production of a film containing mainly silicon and/or other group IV elements
    3.
    发明公开
    Microwave plasma chemical deposition process for the production of a film containing mainly silicon and/or other group IV elements 失效
    一种通过微波等离子体化学气相沉积制造基本上由硅和/或其它的IV族元素的薄膜的方法。

    公开(公告)号：EP0334000A2

    公开(公告)日：1989-09-27

    申请号：EP89101644.6

    申请日：1989-01-31

    申请人： CANON KABUSHIKI KAISHA

    发明人： Arai, Takayoshi ,  Kanai, Masahiro ,  Kawakami, Soichiro ,  Murakami, Tsutomu

    IPC分类号： C23C16/50 ,  C23C16/52 ,  C23C16/22 ,  C23C16/44 ,  H01J37/32

    CPC分类号： C23C16/511 ,  C23C16/452 ,  C23C16/52

    摘要： A process for the formation of a functional deposited film as a thin semiconductor film constituted with the group IV element or a thin semiconductor film constituted with group IV element alloy, by introducing, into a film forming space (116), a compound as the film-forming raw material and, if required, a compound containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of the compounds is activated, while forming hydrogen atoms in an excited state causing chemical reaction with at least one of the compounds in the gaseous state or in the activated state in an activation space (114) different from the film forming space and introducing them into the film forming space, thereby forming a deposited film on a substrate (118), wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator (101) integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled.

    摘要翻译： 一种用于形成功能沉积电影作为薄半导体与IV族元素或一个薄的半导体膜构成的具有第IV族元素合金，通过引入，为膜形成空间（116），化合物作为薄膜的薄膜构成过程 - 形成原料，并且如果需要，在能够在气体状态下各价电子控制为所沉积的电影作为构成元素的，或在一个状态元件含有氢的化合物，其中化合物中的至少一个被激活时，在形成 原子在激发态引起与处于气态或激活状态中在激活空间从所述空间，并将它们引入成膜空间，由此形成膜形成沉积不同的化合物（114）中的至少一个化学反应 电影上的基板（118）worin在激发态的氢原子被从氢气和稀有气体组成的氢气或气体混合物通过的方法形成 在与在微波电路中的两个阻抗匹配电路和氢原子的激发态一体的空腔谐振器（101）设置在等离子体产生室中产生的微波等离子体的控制。

    Pin junction photovoltaic device having an i-TYPE a-SiGe semiconductor layer with a maximal point for the Ge content
    6.
    发明公开
    Pin junction photovoltaic device having an i-TYPE a-SiGe semiconductor layer with a maximal point for the Ge content 失效
    具有pin结，其包括的i的光伏器件（ASI-Ge）的层，具有用于Ge含量最大点。

    公开(公告)号：EP0566972A1

    公开(公告)日：1993-10-27

    申请号：EP93106028.9

    申请日：1993-04-14

    申请人： CANON KABUSHIKI KAISHA

    发明人： Matsuda, Koichi ,  Sano, Masafumi ,  Murakami, Tsutomu

    IPC分类号： H01L31/075

    CPC分类号： H01L31/076 ,  H01L31/03765 ,  H01L31/065 ,  H01L31/075 ,  Y02E10/548

    摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer (105) composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer (103) composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer (118) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer (117) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

    摘要翻译： pin结光生伏打器件，包括基片和设置在所述基板的pin结的半导体有源层区，所述pin结的半导体有源层区域包括p型非单晶半导体材料组成的p型半导体层（105） 在n型的非单晶半导体材料构成的i型非单晶半导体材料和n型半导体层（103）组成的i型半导体层，其特征在于DASS（a）一种 包括非单晶硅半导体材料实质上不含有锗原子的缓冲层（118）被插在所述p型半导体层之间和所述I型半导体层，（b）包含非单晶的缓冲层（117） 实质上不含有锗原子的结晶硅半导体材料介于所述i型半导体层和n型半导体层。所述，并且所述 i型半导体层形成包含在整个区域的20〜70原子％的量的锗原子在哪，同时提供最大的厚度方向锗原子的浓度分布是变化的无定形硅锗半导体材料的 集中点。

    Process for the formation of a functional deposited film containing groups II and VI atoms as the main constituent atoms by microwave plasma chemical vapor deposition process
    7.
    发明公开
    Process for the formation of a functional deposited film containing groups II and VI atoms as the main constituent atoms by microwave plasma chemical vapor deposition process 失效
    一种用于实际的使用主要含有选自II和VI原子微波等离子体层通过化学气相沉积法沉积的制备方法。

    公开(公告)号：EP0327034A2

    公开(公告)日：1989-08-09

    申请号：EP89101657.8

    申请日：1989-01-31

    申请人： CANON KABUSHIKI KAISHA

    发明人： Kanai, Masahiro ,  Murakami, Tsutomu ,  Arai, Takayoshi ,  Kawakami, Soichiro

    IPC分类号： H01L21/365 ,  C30B25/02 ,  C30B29/48 ,  C23C16/30 ,  C23C16/44

    CPC分类号： C30B25/105 ,  C23C16/306 ,  C23C16/452 ,  C30B29/48 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  Y10S148/045 ,  Y10S148/064

    摘要： A process for the formation of a functional deposited film containing atoms belonging to the group II and VI of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a compound (1) and a compound (2) represented respectively by the following general formulae (I) and (II) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in excited state which cause chemical reaction with at least one of said compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from said film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled:
    RnMm      (I)
    AaBb      (II)
    where m represents a positive integer equal to or multiple integer of the valence number for R, n , represents a positive integer equal to or multiple integer of the valence number for M, M represents an element belonging to the group II of the periodical table, R represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group, a re­presents a positive integer equal to or multiple integer of the valence number for B, b represents a positive integer equal to or multiple integer of the valence number for A and A represents an element belonging to the group VI of the periodical table, B represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group.

    摘要翻译： 一种用于功能沉积膜含杂原子的属于组II和周期表如通过引入，为膜形成在基板的淀积电影设置在其中，化合物形成空间的主要组成原子的VI的形成过程（ 1）和（2）由下述通式餐饮（I）和（II）作为膜形成原料，并且如果需要，化合物（3）能够控制价电子的沉积的元素的含分别表示的化合物 电影作为构成元素的每个以气体状态，或者在寻求化合物中的至少一个是先前激活在从成膜空间分开设置激活空间，同时形成激发态氢原子引起的化学反应与在状态 至少（1），（2）和（3）以气态或在来自所述膜形成空间不同的激活空间中的激活状态和将它们引入薄膜用于所述化合物中的一种 明的空间，从而形成在基板上的功能沉积电影，worin在激发态的氢原子被从氢气和稀有气体组成的氢气或气体混合物通过在等离子体产生产生的微波等离子体的方法形成 香槟在空腔谐振器在微波电路和氢原子的激发态具有两个阻抗匹配电路集成配置有控制：RnMm（I）AABB（II）其中的价数为m darstellt的正整数等于或多个整数 用于R，N，darstellt的正整数等于或对于M的价数，属于周期表的第II族元素的M个darstellt的整数倍，R darstellt选自氢（H）中的成员，卤素（X） 和烃基，darstellt的正整数等于或多个整数对于b价数的，b的价数为A和A repres darstellt的正整数等于或多个整数 属于周期表第VI组元素的已废除，B darstellt选自氢（H）中的成员，卤素（X）和烃基。

    Pin junction photovoltaic element wherein the I-type semiconductor layer is formed of ZnSe or ZnSeTe containing 1-4 atomic % hydrogen
    9.
    发明公开
    Pin junction photovoltaic element wherein the I-type semiconductor layer is formed of ZnSe or ZnSeTe containing 1-4 atomic % hydrogen 失效
    具有非单晶材料构成的i型半导体层硒和H pin结光生伏打元件，其至少的Zn，在1至40原子％的量存在。

    公开(公告)号：EP0306297A2

    公开(公告)日：1989-03-08

    申请号：EP88308068.1

    申请日：1988-08-31

    申请人： CANON KABUSHIKI KAISHA

    发明人： Nakagawa, Katsumi ,  Kanai, Masahiro ,  Ishihara, Shunichi ,  Arao, Kozo ,  Fujioka, Yasushi ,  Sakai, Akira ,  Murakami, Tsutomu

    IPC分类号： H01L31/075 ,  H01L31/036 ,  H01L31/0296 ,  H01L31/20

    CPC分类号： H01L31/077 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/1828 ,  Y02E10/543

    摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-­type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe 1-x Te x :H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7 in terms of number of atoms.
    The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-­wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not cause any undesirable light-induced fatigue even upon continuous use for a long period of time.

    摘要翻译： 一种改进的pin结光电元件，其通过p型半导体层，i型半导体层和n型半导体层的结引起照片电动势，在没有特征的至少所述I型半导体层的步骤包括选择一个构件 选自一ZnSe的：H淀积膜含：H沉积膜在65〜85体积％的每单位体积的比例和一ZnSe 1-x碲X含的氢原子在1至4原子％和晶粒结构域的量 中的氢原子在65〜85％（体积）的每单位体积的比例为1〜4％（原子）和晶粒结构域的量，并因此通过含有硒原子和以1:1的硒/碲量比碲原子：9至 3：7中的原子的数目方面。 展品的pin结光电元件改进了对短波长的光的光电转换效率，并具有高的开路电压。 pin结光生伏打元件不即使在连续使用的很长一段时间引起任何不期望的光致疲劳。