摘要:
The invention relates to a method for decontaminating microlithography projection lighting devices with optical elements (2) or parts thereof, especially the surfaces of optical elements, wherein a UV-light and a fluid are used. A second UV-light source (5) is directed towards at least one part of the optical element (2) during exposure pauses for decontamination.
摘要:
In an exposure method for exposing a substrate which is arranged in the area of an image plane (7) of a projection objective (6), as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. By means of a variable adjustment of the output polarization state with the aid of at least one polarization manipulation device (40, 50, 60, 70, 80) the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要:
An illumination system of a microlithographic projection exposure apparatus comprises at least one transmission filter (66; 166; 266; 366; 466; 566; 666; 666'; 766, 766'; 866, 866') which has a different transmittance at least at two positions and which is arranged between a pupil plane (42, 60) and a field plane (52, 58). The transmittance distribution is determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.
摘要:
An illumination system of a microlithographic projection exposure apparatus comprises at least one transmission filter (66; 166; 266; 366; 466; 566; 666; 666'; 766, 766'; 866, 866') which has a different transmittance at least at two positions and which is arranged between a pupil plane (42, 60) and a field plane (52, 58). The transmittance distribution is determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.
摘要:
The invention relates to a system for reducing the coherence of a wave front-emitting laser radiation (10), especially for a projection lens for use in semiconductor lithography, wherein a first partial beam (10a) of a laser beam (10) incident on a surface (11) of a resonator body (9) is partially reflected. A second partial beam (10b) penetrates the resonator body (9) and emerges from the resonator body (9) at least approximately in the area of entry after a plurality of total internal reflections. The two partial beams (10a and 10b) are then passed on jointly to an illumination plane. The resonator body (9) is adapted, in addition to splitting the laser beam into partial beams (10a, 10b), to modulate the wave fronts of at least one partial beam (10b) during a laser pulse. The partial beams (10a, 10b) reflected on the resonator body (9) and penetrating the resonator body are superimposed downstream of the resonator body (9). The resonator body (9, 9') is provided with a phase plate (12) having different local phase distribution.
摘要:
In an exposure method for exposing a substrate which is arranged in the area of an image plane (7) of a projection objective (6), as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. By means of a variable adjustment of the output polarization state with the aid of at least one polarization manipulation device (40, 50, 60, 70, 80) the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要:
The invention relates to a method for producing an optical element from a quartz substrate for illuminating systems having illumination sources that emit beams having a wavelength of 157 nm or shorter. According to the invention, the quartz substrate (9) is joined to a supporting body (11) on at least one side. Afterwards, material is removed from the quartz substrate (9) until obtaining a set value with a thickness on the scale of microns µ. The optical element can be a diffractive optical element or a diffusing disc.
摘要:
Optical system (1) : with a first optical subsystem (3) comprising at least a first birefringent optical element (7), with a second optical subsystem (5) comprising at least a second birefringent optical element (9), wherein between the first optical subsystem and the second optical subsystem an optical retarding system (13) with at least a first optical retarding element (15) is arranged, which introduces a ratardation of one-half of a wavelength between two mutually orthogonal states of polarization.