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    ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR
    1.
    发明公开
    ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR 有权
    ENTFERNUNG VONSILICIUMRÜCKSTÄNDENAUS MEMS-HOHLRAUMBÖDEN

    公开(公告)号：EP2739562A2

    公开(公告)日：2014-06-11

    申请号：EP12746449.3

    申请日：2012-08-03

    申请人： Cavendish Kinetics Inc.

    发明人： TROY, Brian I. ,  RENAULT, Mickael ,  MAGUIRE, Thomas L. ,  LACEY, Joseph Damian Gordon ,  BOBEY, James F.

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00484 ,  B81B3/0008 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0108 ,  H01H1/0036 ,  H01H2001/0089

    摘要： The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.

    摘要翻译： 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在除去后离开硅基残留物。 本发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

    CMP PROCESS FLOW FOR MEMS
    3.
    发明公开
    CMP PROCESS FLOW FOR MEMS 有权
    CMP处理流程MEMS

    公开(公告)号：EP2542499A2

    公开(公告)日：2013-01-09

    申请号：EP11707299.1

    申请日：2011-02-25

    申请人： Cavendish Kinetics Inc.

    发明人： LACEY, Joseph Damian Gordon ,  MAGUIRE, Thomas L. ,  JOSHI, Vikram ,  YOST, Dennis J.

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00095 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0104

    摘要： The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned or simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode.

    METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE
    5.
    发明公开
    METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE 有权
    VERFAHREN ZUR HERSTELLUNG EINES PLANAREN OPEERMATERIALS IN EINER MEMS-VORRICHTUNG

    公开(公告)号：EP3041783A2

    公开(公告)日：2016-07-13

    申请号：EP14771660.9

    申请日：2014-09-02

    申请人： Cavendish Kinetics, Inc.

    发明人： TROY, Brian I. ,  BOBEY, James F. ,  RENAULT, Mickael ,  LACEY, Joseph Damian Gordon ,  MAGUIRE, Thomas L.

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00611 ,  H01G5/16

    摘要： The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.

    摘要翻译： 本发明一般涉及制造MEMS器件的方法。 在MEMS装置中，可移动板设置在空腔内，使得可动板可在空腔内移动。 为了形成空腔，可以沉积牺牲材料，然后将可移动板的材料沉积在其上。 去除牺牲材料以使可移动板在空腔内移动。 由于牺牲材料的最低点和最高点之间的高度差可能相当高，牺牲材料一旦被沉积就可能不够平坦。 为了确保可动板足够平坦，牺牲材料的平面度应该被最大化。 为了使牺牲材料的表面平坦度最大化，可以沉积牺牲材料，然后进行导电加热，以使牺牲材料回流并因此被平坦化。

    METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE
    7.
    发明授权
    METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE 有权
    在MEMS器件中形成平面牺牲材料的方法

    公开(公告)号：EP3041783B1

    公开(公告)日：2018-04-11

    申请号：EP14771660.9

    申请日：2014-09-02

    申请人： Cavendish Kinetics, Inc.

    发明人： TROY, Brian I. ,  BOBEY, James F. ,  RENAULT, Mickael ,  LACEY, Joseph Damian Gordon ,  MAGUIRE, Thomas L.

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00611 ,  H01G5/16

    摘要： The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.