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公开(公告)号：EP3238233B1
公开(公告)日：2019-07-17
申请号：EP15820159.0
申请日：2015-12-22
发明人： POSSEME, Nicolas , LANDIS, Stéphan , NOURI, Lamia
IPC分类号： H01L21/3065 , B81C99/00 , G02B5/18 , H01L21/308 , H01L21/311 , H01L21/768 , B29D11/00 , G02B3/00
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公开(公告)号：EP3238233A1
公开(公告)日：2017-11-01
申请号：EP15820159.0
申请日：2015-12-22
发明人： POSSEME, Nicolas , LANDIS, Stéphan , NOURI, Lamia
IPC分类号： H01L21/3065 , B81C99/00 , G02B5/18 , H01L21/308 , H01L21/311 , H01L21/768 , B29D11/00 , G02B3/00
CPC分类号： B29D11/00365 , B81B2203/0376 , B81C1/00103 , B81C1/0046 , B81C99/009 , B81C2201/0133 , B81C2201/0136 , C23C14/042 , C23C14/48 , C23C14/5853 , C23C14/5873 , G02B3/0025 , G02B3/0031 , G02B3/02 , G03F7/0002 , H01L21/3065 , H01L21/308 , H01L21/31111 , H01L21/31116 , H01L21/76804 , H01L21/76817
摘要： The invention concerns, in particular, a method for producing patterns in a layer to be etched (410), from a stack comprising at least the layer to be etched (410) and one masking layer (420) overlying the layer to be etched (410), the masking layer (420) having at least one pattern (421), the method comprising at least: a) a step of modifying at least one area (411) of the layer to be etched (410) by ion implantation (430) in line with the at least one pattern (421); b) at least one sequence of steps comprising: b1) a step (440) of enlarging the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one area (411', 411'') of the layer to be etched (410) by ion implantation (430) in line with the at least one enlarged pattern (421), the implantation being carried out at a depth less than the implantation depth of the preceding modification step; c) a step (461, 462) of removing the modified areas (411, 411', 411''), the removal comprising a step of etching the modified areas (411, 411', 411'') selectively to the non-modified areas (412) of the layer (410) to be etched.
摘要翻译： 本发明尤其涉及一种用于由至少包括待蚀刻层（410）和覆盖待蚀刻层（410）的一个掩蔽层（420）的叠层产生待蚀刻层（410）中的图案的方法， 410），所述掩模层（420）具有至少一个图案（421），所述方法至少包括：a）通过离子注入（410）修改要蚀刻的层（410）的至少一个区域（411） 430）与所述至少一个图案（421）一致; b）至少一个步骤序列，包括：b1）在待蚀刻的层（410）主要延伸的平面中放大至少一个图案（421）的步骤（440）; b） b2）通过与至少一个放大图案（421）一致的离子注入（430）来修改待蚀刻层（410）的至少一个区域（411'，411“）的步骤， 以小于前一修改步骤的植入深度的深度排出; c）去除所述修改区域（411,411'，411“）的步骤（461,462），所述去除包括选择性地将所述修改区域（411,411'，411”）蚀刻到所述修改区域 将被蚀刻的层（410）的改性区域（412）。
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公开(公告)号：EP3238231A1
公开(公告)日：2017-11-01
申请号：EP15817367.4
申请日：2015-12-22
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L31/0236 , H01L33/00 , G03F7/00 , B81C1/00
CPC分类号： H01L21/266 , B81C1/00103 , B81C1/0046 , B81C1/00587 , B81C2201/0136 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , C23C14/042 , C23C14/48 , G03F7/0002 , H01L21/30604 , H01L21/30608 , H01L21/3065 , H01L21/3086 , H01L21/31111 , H01L21/31144 , H01L31/02363 , H01L31/0392 , H01L31/1852 , H01L33/007 , H01L33/20 , H01L33/22 , Y02E10/50
摘要： The invention relates, in particular, to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least a step of producing previous patterns in a printable layer (110) overlying the underlying layer (120), the production of the previous patterns comprising the nanoimprinting of the printable layer (110) and leaving in place a continuous layer formed by the printable layer (110) and covering the underlying layer (120), characterised in that it comprises the following step: at least one step of modifying the underlying layer (120) by ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the printable layer (110) comprising the subsequent patterns, the implantation (421) parameters being chosen so as to form, in the underlying layer (120), implanted areas (122) and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that is dependent on the previous patterns.
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公开(公告)号：EP3631843A1
公开(公告)日：2020-04-08
申请号：EP18724929.7
申请日：2018-05-24
IPC分类号： H01L21/3063 , B81C1/00
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5.发明公开
公开(公告)号：EP3238232A1
公开(公告)日：2017-11-01
申请号：EP15820157.4
申请日：2015-12-22
发明人： LANDIS, Stéphan , POSSEME, Nicolas , NOURI, Lamia
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L31/0236 , H01L33/00 , G03F7/00 , B81C1/00
CPC分类号： H01L21/266 , B81C1/00103 , B81C1/0046 , B81C1/00587 , B81C2201/0136 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , C23C14/042 , C23C14/48 , G03F7/0002 , H01L21/30604 , H01L21/30608 , H01L21/3065 , H01L21/3086 , H01L21/31111 , H01L21/31144 , H01L31/02363 , H01L31/0392 , H01L31/1852 , H01L33/007 , H01L33/20 , H01L33/22 , Y02E10/50
摘要： The invention relates, in particular, to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least a step of producing previous patterns in a printable layer (110) overlying the underlying layer (120), the production of the previous patterns comprising the nanoimprinting of the printable layer (110) and leaving in place a continuous layer formed by the printable layer (110) and covering the underlying layer (120), characterised in that it comprises the following step: at least one step of modifying the underlying layer (120) by ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the printable layer (110) comprising the subsequent patterns, the implantation (421) parameters being chosen so as to form, in the underlying layer (120), implanted areas (122) and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that is dependent on the previous patterns.
摘要翻译： 本发明尤其涉及一种用于在底层（120）中产生随后的图案的方法，所述方法至少包括在覆盖下层（120）的可印刷层（110）中产生先前图案的步骤，所述产品 所述先前图案包括可印刷层（110）的纳米压印并留下由可印刷层（110）形成并覆盖下层（120）的连续层，其特征在于其包括以下步骤：至少一个 通过在所述下层（120）中的离子注入（421）来修改所述下层（120）的步骤，所述注入（421）通过包括所述后续图案的可印刷层（110）来执行，所述注入 以便在下层（120）中形成注入区域（122）和非注入区域，非注入区域限定后续图案并且具有依赖于前面的图案的几何形状 tterns。
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