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    Merged-mask micro-machining process
    1.
    发明公开
    Merged-mask micro-machining process 有权
    Mikromechanisches Herstellungsverfahren mitüberblendetenMasken

    公开(公告)号：EP2264468A3

    公开(公告)日：2012-02-08

    申请号：EP10012678.8

    申请日：2000-07-13

    Applicant: ION Geophysical Corporation

    Inventor： Yu, Lianzhong ,  Goldberg, Howard D. ,  Ried, Robert P. ,  Yu, Duli

    IPC: G01P9/04 ,  G01P15/135 ,  G02B26/00 ,  C23F1/00 ,  G03F7/26 ,  G03F7/00

    CPC classification number: G02B26/0816 ,  B81B2201/042 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0109 ,  C23F1/02

    Abstract: The present invention provides merged-mask processes for fabricating micromachined devices in general and mirrored assemblies for use in optical scanning devices in particular. A method of fabricating a three dimensional structure, comprising, providing a substrate, applying a layer of a first masking material onto the substrate, applying a layer of a second masking material onto the layer of the first masking material, patterning the layer of the second masking material, applying a layer of a third masking material onto the portions not covered by the patterned layer of the second masking material, the layer of the third masking material is at least as thick as the combined thickness of the layers of the first and second masking materials, patterning the layers of the first and third masking materials, etching the exposed portions of the substrate, etching the exposed portions of the layers of the first and third masking materials and etching the exposed portions of the substrate.

    Abstract translation: 本发明提供了用于一般地制造微机械装置和特别是用于光学扫描装置的镜面组件的合并掩模工艺。 一种制造三维结构的方法，包括：提供衬底，将第一掩蔽材料层施加到所述衬底上，将第二掩蔽材料层施加到所述第一掩模材料的所述层上，将所述第二掩模材料的所述层 掩模材料，将第三掩模材料层施加到未被第二掩模材料的图案化层覆盖的部分上，第三掩模材料的层至少与第一和第二掩模材料的层的组合厚度一样厚 掩模材料，图案化第一和第三掩模材料的层，蚀刻衬底的暴露部分，蚀刻第一和第三掩模材料的层的暴露部分并蚀刻衬底的暴露部分。

    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER
    3.
    发明授权
    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER 有权
    方法用于蚀刻氧化硅的受害者层

    公开(公告)号：EP2046677B1

    公开(公告)日：2011-10-19

    申请号：EP07789096.0

    申请日：2007-08-02

    Applicant: Memsstar Limited

    Inventor： O'HARA, Anthony

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81C2201/0133

    Abstract: A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by- product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

    Merged-mask micro-machining process
    4.
    发明公开
    Merged-mask micro-machining process 有权
    所述的微机械的制造方法与交叉衰落掩模

    公开(公告)号：EP2264468A2

    公开(公告)日：2010-12-22

    申请号：EP10012678.8

    申请日：2000-07-13

    Applicant: ION Geophysical Corporation

    Inventor： Yu, Lianzhong ,  Goldberg, Howard D. ,  Ried, Robert P. ,  Yu, Duli

    IPC: G01P9/04 ,  G01P15/135 ,  G02B26/00 ,  C23F1/00 ,  G03F7/26 ,  G03F7/00

    CPC classification number: G02B26/0816 ,  B81B2201/042 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0109 ,  C23F1/02

    Abstract: The present invention provides merged-mask processes for fabricating micromachined devices in general and mirrored assemblies for use in optical scanning devices in particular. A method of fabricating a three dimensional structure, comprising, providing a substrate, applying a layer of a first masking material onto the substrate, applying a layer of a second masking material onto the layer of the first masking material, patterning the layer of the second masking material, applying a layer of a third masking material onto the portions not covered by the patterned layer of the second masking material, the layer of the third masking material is at least as thick as the combined thickness of the layers of the first and second masking materials, patterning the layers of the first and third masking materials, etching the exposed portions of the substrate, etching the exposed portions of the layers of the first and third masking materials and etching the exposed portions of the substrate.

    ACCELEROMETER STRAIN RELIEF STRUCTURE
    5.
    发明授权
    ACCELEROMETER STRAIN RELIEF STRUCTURE 有权
    ELEMENT紧张缓解加速度传感器

    公开(公告)号：EP1395835B1

    公开(公告)日：2006-08-16

    申请号：EP02731255.2

    申请日：2002-04-05

    Applicant: Honeywell International Inc.

    Inventor： MALAMETZ, David

    IPC: G01P15/08 ,  G01P1/00 ,  B81B3/00

    CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/058 ,  B81C2201/0133 ,  G01P1/006 ,  G01P15/097

    Abstract: An apparatus and method for suspending and strain isolating a structure is provided, the apparatus having a first elongated flexure having first and second ends structured for connection to a support structure, and a second elongated flexure having first and second ends structured for connection to a structure to be isolated from the support structure. A portion of the second flexure intermediate the first and second ends thereof is interconnected to a portion of the first flexure intermediate the first and second ends thereof. The strain relief structure may be used in an accelerometer. The structure may have a H or X form, where the legs represent the elongated flexures.

    MERGED-MASK MICRO-MACHINING PROCESS
    7.
    发明公开
    MERGED-MASK MICRO-MACHINING PROCESS 有权
    麻醉师HERSTELLUNGSVERFAHREN MITüBERBLENDETENMASKEN

    公开(公告)号：EP1196788A4

    公开(公告)日：2003-01-15

    申请号：EP00945370

    申请日：2000-07-13

    Applicant: INPUT OUTPUT INC

    Inventor： YU LIANZHONG ,  RIED ROBERT P ,  GOLDBERG HOWARD D ,  YU DULI

    IPC: G02B26/10 ,  B81B3/00 ,  B81C1/00 ,  C23F1/02 ,  G01P9/04 ,  G02B26/08 ,  G03F7/20 ,  C23F1/00 ,  G01P15/135 ,  G02B26/00 ,  G03F7/00 ,  G03F7/26

    CPC classification number: G02B26/0816 ,  B81B2201/042 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0109 ,  C23F1/02

    Abstract: The present invention provides merged-mask processes for fabricating micro-machined devices in general and mirrored assemblies for use in optical scanning devices in particular. The process includes (a) providing a substrate having a predetermined thickness; (b) applying a first masking layer on a first portion of the substrate and a second masking layer on a second portion of the substrate, said second masking layer being at least as thick as the first masking layer; (c) etching a portion of the second masking layer to provide a first exposed portion of the substrate; (d) etching the first exposed portion of the substrate to a first depth; (e) etching the second masking layer to provide a second exposed portion of the substrate; and (f) etching simultaneously the first exposed portion of the substrate to a second depth and the second exposed portion of the substrate to a first depth. The process further comprises patterning the first masking layer before applying the second masking layer to provide the second portion of the substrate for etching and etching the first masking layer to expose the second portion of the substrate. The first and second masking layers are applied prior to etching the substrate.

    Abstract translation: 本发明提供了用于一般地制造微机械装置和特别是用于光学扫描装置的镜面组件的合并掩模工艺。 一种制造三维结构的方法，包括：提供衬底，将第一掩蔽材料层施加到所述衬底上，将第二掩蔽材料层施加到所述第一掩模材料的所述层上，将所述第二掩模材料的所述层 掩模材料，将第三掩模材料层施加到未被第二掩模材料的图案化层覆盖的部分上，第三掩模材料的层至少与第一和第二掩模材料的层的组合厚度一样厚 掩模材料，图案化第一和第三掩模材料的层，蚀刻衬底的暴露部分，蚀刻第一和第三掩模材料的层的暴露部分并蚀刻衬底的暴露部分。

    MERGED-MASK MICRO-MACHINING PROCESS
    8.
    发明公开
    MERGED-MASK MICRO-MACHINING PROCESS 有权
    跨褪色口罩微机械方法

    公开(公告)号：EP1196788A1

    公开(公告)日：2002-04-17

    申请号：EP00945370.5

    申请日：2000-07-13

    Applicant: Input Output, Inc.

    Inventor： YU, Lianzhong,13906 NE 9th PL ,  RIED, Robert, P. ,  GOLDBERG, Howard, D. ,  YU, Duli

    IPC: G01P9/04 ,  G01P15/135 ,  G02B26/00 ,  C23F1/00 ,  G03F7/26

    CPC classification number: G02B26/0816 ,  B81B2201/042 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0109 ,  C23F1/02

    Abstract: The present invention provides merged-mask processes for fabricating micro-machined devices in general and mirrored assemblies for use in optical scanning devices in particular. The process includes (a) providing a substrate having a predetermined thickness; (b) applying a first masking layer on a first portion of the substrate and a second masking layer on a second portion of the substrate, said second masking layer being at least as thick as the first masking layer; (c) etching a portion of the second masking layer to provide a first exposed portion of the substrate; (d) etching the first exposed portion of the substrate to a first depth; (e) etching the second masking layer to provide a second exposed portion of the substrate; and (f) etching simultaneously the first exposed portion of the substrate to a second depth and the second exposed portion of the substrate to a first depth. The process further comprises patterning the first masking layer before applying the second masking layer to provide the second portion of the substrate for etching and etching the first masking layer to expose the second portion of the substrate. The first and second masking layers are applied prior to etching the substrate.

    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP
    9.
    发明公开
    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP 有权
    玻璃或石英芯片的等离子体辅助显微结构对准和预结合方法

    公开(公告)号：EP3306650A1

    公开(公告)日：2018-04-11

    申请号：EP15903951.0

    申请日：2015-11-17

    Applicant: Beijing University of Technology

    Inventor： GUO, Guangsheng ,  WANG, Siyu ,  PU, Qiaosheng ,  WANG, Xiayan

    IPC: H01L21/60 ,  H01L21/68

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

    Abstract translation: 等离子体辅助玻璃和石英微结构微结构的精确对准和预键合方法属于微芯片的微细加工和键合技术。 其步骤如下：将玻璃或石英微芯片上的光刻胶和铬层完全除去，然后用非离子表面活性剂和一定量的超纯水充分清洗表面。 然后利用等离子体清洁装置进行表面处理以获得具有高亲水性的装备表面。 在干燥条件下，借助显微镜观察清洗后，通过移动基板和盖板完成精确对准。 此外，为了实现玻璃和石英微芯片的微结构的精确对准和预粘合，将微量超纯水灌注到边缘缝隙中以进行粘附，并且在充分挤压后通过真空干燥完全擦去全部水。 基于上述步骤，可通过进一步采用热粘合方法实现永久粘合。 总之，用这种方法完成精确对准和预粘接的整个操作需要30分钟。 此外，该方法具有快速，高效，易操作，操作安全，应用广泛等特点。

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