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    Metal/ceramic bonding substrate and method for producing same
    1.
    发明公开
    Metal/ceramic bonding substrate and method for producing same 审中-公开
    Metall / Keramik-Verbundsubstrat和Verfahren zu seiner Herstellung

    公开(公告)号：EP1523037A2

    公开(公告)日：2005-04-13

    申请号：EP04024192.9

    申请日：2004-10-11

    申请人： Dowa Mining Co., Ltd.

    发明人： Osanai, Hideyo ,  Takahashi, Takayuki ,  Namioka, Makoto

    IPC分类号： H01L23/373 ,  H01L23/14

    摘要： In a metal/ceramic bonding substrate 10 wherein a circuit forming metal plate 14 is bonded to one side of a ceramic substrate 12 and a radiating metal base plate 16 is bonded to the other side thereof, a difference in level is provided along the entire circumference of the bonding surface of the ceramic substrate 12 to the metal base plate 16. The difference in level is provided by forming at least one of a rising portion 16a and a groove portion 116b on and in the metal base plate 16.

    摘要翻译： 在其中将电路形成金属板14接​​合到陶瓷基板12的一侧的金属/陶瓷接合基板10和散热金属基板16的另一侧接合，沿着整个圆周设置有水平差 陶瓷基板12的接合表面与金属基板16的接合表面。通过在金属基板16上形成上升部分16a和凹槽部分116b中的至少一个来提供液位差。

    Ceramic circuit board and power module
    2.
    发明公开
    Ceramic circuit board and power module 有权
    Keramische Leiterplatte und Leistungsmodul

    公开(公告)号：EP1345480A3

    公开(公告)日：2005-06-01

    申请号：EP03005365.6

    申请日：2003-03-12

    申请人： Dowa Mining Co., Ltd.

    发明人： Kitamura, Yukihiro ,  Takahashi, Takayuki ,  Ohta, Mitsuru ,  Ogawa, Yuji

    IPC分类号： H05K1/02 ,  H01L23/15

    CPC分类号： H05K1/0271 ,  C04B37/021 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/64 ,  C04B2237/704 ,  C04B2237/706 ,  H01L23/15 ,  H01L23/3735 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/3511 ,  H05K1/0306 ,  H05K2201/0355 ,  H05K2201/068 ,  H05K2201/09018 ,  H01L2924/00

    摘要： In a ceramic circuit board (10) having a ceramic substrate (12) and a metal circuit plate (14) bonded to one surface of the ceramic substrate (12), assuming that the warpage of the ceramic circuit board (10) is a difference in height between the center and edge of the metal circuit plate (14) and is positive (+) when the circuit board warps so as to be concave on the side of the metal circuit plate (14), the warpage of the ceramic circuit board (10) is in the range of from -0.1 mm to +0.3 mm when the ceramic circuit board (10) is heated to 350 °C, and in the range of from +0.05 mm to +0.6 mm when the temperature of the ceramic circuit board (10) is returned to a room temperature after the ceramic circuit board (10) is heated to 350 °C. The initial warpage of the ceramic circuit board (10) is in the range of from +0.05 mm to +0.6 mm.

    摘要翻译： 在具有陶瓷基板（12）的陶瓷电路基板（10）和与陶瓷基板（12）的一个面接合的金属电路板（14）的情况下，假定陶瓷电路基板（10）的翘曲差 在金属电路板（14）的中心和边缘之间的高度为正（+），并且当电路板翘曲以在金属电路板（14）侧凹陷时，陶瓷电路板的翘曲 当陶瓷电路板（10）被加热至350℃时，在陶瓷电路板（10）的范围为-0.0mm至+0.6mm的范围内，当陶瓷电路板（10）的温度为+ 0.05mm至+ 在将陶瓷电路板（10）加热至350℃之后，电路板（10）返回到室温。陶瓷电路板（10）的初始翘曲范围为+ 0.05mm至+0.6mm 。

    Metal/ceramic bonding substrate and method for producing same
    3.
    发明公开
    Metal/ceramic bonding substrate and method for producing same 审中-公开
    Metallkeramiksubstrat和seine Herstellungsmethode

    公开(公告)号：EP1526569A2

    公开(公告)日：2005-04-27

    申请号：EP04024974.0

    申请日：2004-10-20

    申请人： Dowa Mining Co., Ltd.

    发明人： Osanai, Hideyo ,  Takahashi, Takayuki ,  Namioka, Makoto

    IPC分类号： H01L23/15 ,  H01L23/14 ,  H01L23/373

    摘要： There is provided a metal/ceramic bonding substrate having improved reliability to heat cycles, and a method for producing the same. In a metal/ceramic bonding substrate 10 wherein a circuit forming metal plate 14 is bonded to one side of a ceramic substrate 12 and a radiating metal base plate 16 is bonded to the other side thereof, at least part of the ceramic substrate 12 is embedded in the metal base plate 16. The ceramic substrate 12 is arranged substantially in parallel to the metal base member 16.

    摘要翻译： 提供了具有提高的热循环可靠性的金属/陶瓷接合基板及其制造方法。 在其中将电路形成金属板14接​​合到陶瓷基板12的一侧的金属/陶瓷接合基板10和散热金属基板16的另一侧接合，至少部分陶瓷基板12被嵌入 在金属基板16上。陶瓷基板12大致平行于金属基件16。

    Ceramic circuit board and power module
    8.
    发明公开
    Ceramic circuit board and power module 有权
    Keramische Leiterplatte

    公开(公告)号：EP1345480A2

    公开(公告)日：2003-09-17

    申请号：EP03005365.6

    申请日：2003-03-12

    申请人： Dowa Mining Co., Ltd.

    发明人： Kitamura, Yukihiro ,  Takahashi, Takayuki ,  Ohta, Mitsuru ,  Ogawa, Yuji

    IPC分类号： H05K1/02 ,  H01L23/15

    CPC分类号： H05K1/0271 ,  C04B37/021 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/64 ,  C04B2237/704 ,  C04B2237/706 ,  H01L23/15 ,  H01L23/3735 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/3511 ,  H05K1/0306 ,  H05K2201/0355 ,  H05K2201/068 ,  H05K2201/09018 ,  H01L2924/00

    摘要： In a ceramic circuit board having a ceramic substrate and a metal circuit plate bonded to one surface of the ceramic substrate, assuming that the warpage of the ceramic circuit board is a difference in height between the center and edge of the metal circuit plate and is positive (+) when the circuit board warps so as to be concave on the side of the metal circuit plate, the warpage of the ceramic circuit board is in the range of from -0.1 mm to +0.3 mm when the ceramic circuit board is heated to 350 °C, and in the range of from +0.05 mm to +0.6 mm when the temperature of the ceramic circuit board is returned to a room temperature after the ceramic circuit board is heated to 350 °C. The initial warpage of the ceramic circuit board is in the range of from +0.05 mm to +0.6 mm.

    摘要翻译： 在具有陶瓷基板（12）的陶瓷电路基板（10）和与陶瓷基板（12）的一个面接合的金属电路板（14）的情况下，假定陶瓷电路基板（10）的翘曲差 在金属电路板（14）的中心和边缘之间的高度为正（+），并且当电路板翘曲以在金属电路板（14）侧凹陷时，陶瓷电路板的翘曲 当陶瓷电路板（10）被加热至350℃时，在陶瓷电路板（10）的范围为-0.0mm至+0.6mm的范围内，当陶瓷电路板（10）的温度为+ 0.05mm至+ 在将陶瓷电路板（10）加热至350℃之后，电路板（10）返回到室温。陶瓷电路板（10）的初始翘曲范围为+ 0.05mm至+0.6mm 。