摘要:
An information processing apparatus detecting presence or absence of abnormality of a vacuum pump derived from a product produced within a target vacuum pump, including: a determination unit configured to determine a normal variation range or a normal time variation behavior of a target state quantity which is a state quantity varying depending on a load of gas flowing into the vacuum pump, based on at least one of past target state quantities of the target vacuum pump or another vacuum pump; and a comparison unit configured to compare a current target state quantity of the target vacuum pump with the normal variation range or the normal time variation behavior and output the comparison result.
摘要:
A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wherein the sensor is disposed at an inside of the different environment, a processing device to process detection signals from the sensor is disposed at an outside of the different environment, and a transmission means transmits detection signals from the sensor to the processing device.
摘要:
An electron beam apparatus comprises a TDI sensor (64) and a feed-through device (50). The feed-through device has a socket contact (54) for interconnecting a pin (52) attached to a flanged (51) for separating different environments. The other pin (53) making a pair with the pin (52) and the socket contact (54) together construct a connecting block, and the socket contact (54) has an elastic member (61). The pin (53) is connected with the TDI sensor (64), in which a pixel array has been adaptively configured based on the optical characteristic of an image projecting optical system. That sensor has a number of integration stages that can reduce the field of view of the image projecting optical system. Further, the number of integration stage may be determined such that the data rate of the TDI sensor would not be reduced but the number of pins would not be increased as much as possible. Preferably, the number of line count may be almost equal to the number of integration stages.
摘要:
An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12 for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.
摘要:
An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample (W) placed on an X-Y-θ stage (9-1) through an electrostatic lens (4-1), an objective lens (11-1) and the like, secondary electrons or reflected electrons are emitted from the sample (W). The primary electron beam is incident at an incident angle set at approximately 35° or more by controlling a deflector (8-1). Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP (14-1), a fluorescent plate (15-1), a relay lens (16-1), and a TDI (or CCD) (17-1). An electric signal from the TDI (17-1) is supplied to a personal computer (18-1) for image processing to generate a two-dimensional image of the sample.
摘要:
A substrate inspection apparatus 1-1 (Fig. 1) of the present invention performs the following steps of: carrying a substrate "S" to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25·1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25·11.
摘要:
An electron beam apparatus comprises a TDI sensor (64) and a feed-through device (50). The feed-through device has a socket contact (54) for interconnecting a pin (52) attached to a flanged (51) for separating different environments. The other pin (53) making a pair with the pin (52) and the socket contact (54) together construct a connecting block, and the socket contact (54) has an elastic member (61). The pin (53) is connected with the TDI sensor (64), in which a pixel array has been adaptively configured based on the optical characteristic of an image projecting optical system. That sensor has a number of integration stages that can reduce the field of view of the image projecting optical system. Further, the number of integration stage may be determined such that the data rate of the TDI sensor would not be reduced but the number of pins would not be increased as much as possible. Preferably, the number of line count may be almost equal to the number of integration stages.
摘要:
The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate. The substrate inspection apparatus comprises: an electron beam apparatus including a charged particle beam source for emitting a charged particle beam, a primary optical system for irradiating the charged particle beam onto the substrate, a secondary optical system into which a secondary charged particle beam is introduced, the secondary charged particle beam being emitted from the substrate by an irradiation of the charged particle beam, a detection system for detecting the secondary charged particle beam introduced into said secondary optical system and outputting as an electric signal, and a process control system for processing and evaluating the electric signal; a stage unit for holding the substrate and moving the substrate relatively to said electron beam apparatus; a working chamber capable of shielding at least an upper region of the stage unit form outside to control under desired atmosphere; and a substrate load-unload mechanism for transferring the substrate into or out of the stage.
摘要:
An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.