摘要:
An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41,42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
摘要:
An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.
摘要:
An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12 for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.
摘要:
A substrate inspection apparatus 1-1 (Fig. 1) of the present invention performs the following steps of: carrying a substrate "S" to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
摘要:
An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system. Specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mechanism for transporting the substrate 2006 into and out of the testing chamber, an image processing analyzer 2015 for detecting defects on the substrate 2006, a vibration isolating mechanism for the testing chamber, a vacuum system for holding the testing chamber at a vacuum, and a control system 2017 for displaying or storing positions of defects on the substrate 2006.
摘要:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
摘要:
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25·1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25·11.
摘要:
The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate. The substrate inspection apparatus comprises: an electron beam apparatus including a charged particle beam source for emitting a charged particle beam, a primary optical system for irradiating the charged particle beam onto the substrate, a secondary optical system into which a secondary charged particle beam is introduced, the secondary charged particle beam being emitted from the substrate by an irradiation of the charged particle beam, a detection system for detecting the secondary charged particle beam introduced into said secondary optical system and outputting as an electric signal, and a process control system for processing and evaluating the electric signal; a stage unit for holding the substrate and moving the substrate relatively to said electron beam apparatus; a working chamber capable of shielding at least an upper region of the stage unit form outside to control under desired atmosphere; and a substrate load-unload mechanism for transferring the substrate into or out of the stage.