公开(公告)号：EP3857611A1

公开(公告)日：2021-08-04

申请号：EP19804918.1

申请日：2019-10-23

申请人： First Solar, Inc.

发明人： CHEN, Le ,  GROVER, Sachit ,  KEPHART, Jason ,  KNIAJANSKI, Sergei ,  LEE, Chungho ,  LI, Xiaoping ,  LIAO, Feng ,  LU, Dingyuan ,  MALLICK, Rajni ,  WANG, Wenming ,  XIONG, Gang ,  ZHANG, Wei

IPC分类号： H01L31/0296 ,  H01L31/0392 ,  H01L31/073 ,  H01L31/18

公开(公告)号：EP3465773A1

公开(公告)日：2019-04-10

申请号：EP17729672.0

申请日：2017-05-31

申请人： First Solar, Inc

发明人： RING, Kenneth ,  HUBER, William, H. ,  PENG, Hongying ,  GLOECKLER, Markus ,  MOR, Gopal ,  LIAO, Feng ,  ZHAO, Zhibo ,  LOS, Andrei

IPC分类号： H01L31/0296 ,  H01L31/073 ,  H01L31/18

摘要： A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr (=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

公开(公告)号：EP3216060A1

公开(公告)日：2017-09-13

申请号：EP15706121.9

申请日：2015-02-11

申请人： First Solar, Inc

发明人： DAMJANOVIC, Dan ,  GLOECKLER, Markus ,  LIAO, Feng ,  LOS, Andrei ,  MAO, Dan ,  MILLIRON, Benjamin ,  MOR, Gopal ,  POWELL, Rick ,  RING, Kenneth ,  ROGGELIN, Aaron ,  TRIVEDI, Jigish ,  ZHAO, Zhibo

IPC分类号： H01L31/0296

CPC分类号： H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

摘要翻译： 光伏器件包括衬底结构和至少一个诸如CdSeTe层的含Se层。 用于制造光伏器件的工艺包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和气相传输沉积工艺中的至少一种在衬底上形成CdSeTe层。 该工艺还可以包括控制含Se层的厚度范围。

公开(公告)号：EP2954562A2

公开(公告)日：2015-12-16

申请号：EP14705003.3

申请日：2014-02-03

申请人： First Solar, Inc

发明人： TRIVEDI, Jigish ,  POWELL, Rick ,  DAMJANOVIC, Dan ,  GUO, Jing ,  ZHAO, Zhibo ,  LIAO, Feng ,  KARPENKO, Oleh ,  JAYARAMAN, Sreenivas ,  LIM, Chong

IPC分类号： H01L31/073 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/065 ,  H01L31/02167 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/543 ,  Y02P70/521

摘要： A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

公开(公告)号：EP2803078A1

公开(公告)日：2014-11-19

申请号：EP13700831.4

申请日：2013-01-11

申请人： First Solar, Inc

发明人： XIONG, Gang ,  POWELL, Rick, C. ,  PENG, Xilin ,  BARDEN, John ,  ALLENIC, Arnold ,  LIAO, Feng ,  RING, Kenneth, M.

IPC分类号： H01L21/02 ,  H01L21/365

CPC分类号： H01L31/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/407 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/483 ,  C23C16/52 ,  H01J37/3476 ,  H01J2237/332 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

摘要： A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

公开(公告)号：EP3675182A3

公开(公告)日：2020-07-29

申请号：EP20154558.9

申请日：2017-05-31

申请人： First Solar, Inc

发明人： RING, Kenneth ,  HUBER, William H. ,  PENG, Hongying ,  GLOECKLER, Markus ,  MOR, Gopal ,  LIAO, Feng ,  ZHAO, Zhibo ,  LOS, Andrei

IPC分类号： H01L31/0296 ,  H01L31/073 ,  H01L31/18

摘要： A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5 x 10 15 /cm 3 to 2.5 x 10 17 /cm 3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and P MAX at higher P T (= I SC ∗ V OC product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved P T may result from increased I SC , increased V OC , or both.

公开(公告)号：EP3465773B1

公开(公告)日：2020-03-11

申请号：EP17729672.0

申请日：2017-05-31

申请人： First Solar, Inc

发明人： RING, Kenneth ,  HUBER, William, H. ,  PENG, Hongying ,  GLOECKLER, Markus ,  MOR, Gopal ,  LIAO, Feng ,  ZHAO, Zhibo ,  LOS, Andrei

IPC分类号： H01L31/0296 ,  H01L31/073 ,  H01L31/18

公开(公告)号：EP2973749A1

公开(公告)日：2016-01-20

申请号：EP14719212.4

申请日：2014-03-14

申请人： First Solar, Inc.

发明人： LIAO, Feng ,  GLOECKLER, Markus ,  POWELL, Rick ,  BULLER, Benyamin ,  ZHAO, Zhibo ,  SANKIN, Igor ,  TRIVEDI, Jigish ,  CHENG, Long ,  BREWER, Jeremy

IPC分类号： H01L31/18

CPC分类号： H01L31/035272 ,  H01L31/0203 ,  H01L31/0296 ,  H01L31/1828 ,  Y02E10/543

摘要： Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdS
x Te
1-x (where 0≤x≤1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 µm and about 14 µm and methods for forming the same.

摘要翻译： 实施例包括包括至少一个吸收层的光伏器件，例如。 CdTe和/或CdSxTe1-x（其中0＆nlE; x＆nlE; 1），其平均晶粒尺寸与厚度之比大于2至约50，平均晶粒尺寸在约4μm至约14μm之间， 相同。

公开(公告)号：EP2809822A1

公开(公告)日：2014-12-10

申请号：EP13702873.4

申请日：2013-01-29

申请人： First Solar, Inc

发明人： XIONG, Gang ,  BARDEN, John ,  POWELL, Rick, C. ,  JIN, Changming ,  LIAO, Feng

IPC分类号： C23C14/02 ,  C23C14/06 ,  C23C14/22 ,  C23C14/58 ,  H01L21/365 ,  H01L31/032

CPC分类号： H01L31/18 ,  C23C14/024 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/58 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

摘要： A vapor transport deposition system and method that includes a vaporizer and distributor unit ant at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre-or post-deposition processes.