公开(公告)号：EP4293727A1

公开(公告)日：2023-12-20

申请号：EP23178663.3

申请日：2020-10-23

申请人： First Solar, Inc

发明人： DIRUBIO, Christopher ,  GLOECKLER, Markus ,  LI, Weixin ,  MALIK, Richard Jr. ,  MAXWELL, Riley ,  SHARRER, Jason ,  TRIVEDI, Jigish

IPC分类号： H01L31/02 ,  H01L31/048

摘要： Photovoltaic devices, and methods of making the same, are described. A photovoltaic device comprises a plurality of electrically connected photovoltaic cells, wherein the photovoltaic cells comprise a conducting layer having a first surface and a second surface, the first surface facing an absorber layer; an insulating material disposed on the second surface over at least one of the photovoltaic cells; a conductive member on the insulating material, wherein the insulating material is configured to electrically insulate the conductive member from the second surface; a bus member electrically coupled to the one of the plurality of photovoltaic cells and to the conductive member; and an edge seal comprising a sealant material extending over at least a portion of the one of the plurality of photovoltaic cells; wherein the bus member is disposed between the edge seal and the plurality of photovoltaic cells.

公开(公告)号：EP3031084A1

公开(公告)日：2016-06-15

申请号：EP14833768.6

申请日：2014-08-06

申请人： First Solar, Inc

发明人： GARABEDIAN, Raffi ,  MALIK, Roger ,  THEIL, Jeremy ,  TRIVEDI, Jigish ,  YU, Ming

IPC分类号： H01L31/0304 ,  C23C16/455 ,  C23C16/54

CPC分类号： H01L31/0304 ,  C23C14/243 ,  C23C14/568 ,  C23C16/22 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/64 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/03046 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/184 ,  H01L2221/67 ,  Y02E10/544 ,  Y02P70/521

摘要： An inline vacuum deposition system contains thermal source pairs configured in adjacent deposition zones. Dopant sources allow the electrical characteristics of the sequentially formed layers to be controlled for a preferred deposition growth profile.

公开(公告)号：EP2973730A1

公开(公告)日：2016-01-20

申请号：EP14715786.1

申请日：2014-03-13

申请人： First Solar, Inc

发明人： ALLENIC, Arnold ,  BAN, Zhigang ,  BULLER, Benyamin ,  GLOECKLER, Markus ,  MILLIRON, Benjamin ,  PENG, Xilin ,  POWELL, Rick ,  TRIVEDI, Jigish ,  VARGHESE, Ooman K. ,  WANG, Jianjun ,  ZHAO, Zhibo

IPC分类号： H01L31/0296 ,  H01L31/0392 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

摘要： A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdS
x Te
1-x ) layer as are methods of forming such a photovoltaic device.

公开(公告)号：EP2852969A1

公开(公告)日：2015-04-01

申请号：EP13727722.4

申请日：2013-05-20

申请人： First Solar, Inc

发明人： GUPTA, Akhlesh ,  GLOECKLER, Markus ,  POWELL, Rick, C. ,  PENG, Xilin ,  WANG, Jianjun ,  ZHAO, Zhibo ,  TRIVEDI, Jigish

IPC分类号： H01L21/36 ,  H01L21/02

CPC分类号： H01L31/1864 ,  H01L21/02474 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02672 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0296 ,  H01L31/073

摘要： A method for producing, apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

摘要翻译： 一种用于生产，制造装置和光电转换装置，包括：半导体层用卤化物热处理表面的方法确实增加晶粒生长的半导体层中的至少一个内，并提高半导体层之间的界面。 卤化物热处理包括将中和表面上邻近或部分的半导体层的加热卤化物化合物的多个涂层。

公开(公告)号：EP2973749A1

公开(公告)日：2016-01-20

申请号：EP14719212.4

申请日：2014-03-14

申请人： First Solar, Inc.

发明人： LIAO, Feng ,  GLOECKLER, Markus ,  POWELL, Rick ,  BULLER, Benyamin ,  ZHAO, Zhibo ,  SANKIN, Igor ,  TRIVEDI, Jigish ,  CHENG, Long ,  BREWER, Jeremy

IPC分类号： H01L31/18

CPC分类号： H01L31/035272 ,  H01L31/0203 ,  H01L31/0296 ,  H01L31/1828 ,  Y02E10/543

摘要： Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdS
x Te
1-x (where 0≤x≤1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 µm and about 14 µm and methods for forming the same.

摘要翻译： 实施例包括包括至少一个吸收层的光伏器件，例如。 CdTe和/或CdSxTe1-x（其中0＆nlE; x＆nlE; 1），其平均晶粒尺寸与厚度之比大于2至约50，平均晶粒尺寸在约4μm至约14μm之间， 相同。

公开(公告)号：EP2973731A1

公开(公告)日：2016-01-20

申请号：EP14719957.4

申请日：2014-03-13

申请人： First Solar, Inc

发明人： BULLER, Benyamin ,  SANKIN, Igor ,  CHENG, Long ,  TRIVEDI, Jigish ,  WANG, Jianjun ,  TRACY, Kieran ,  CHRISTENSEN, Scott ,  XIONG, Gang ,  GLOECKLER, Markus ,  YU, San

IPC分类号： H01L31/0296 ,  H01L31/073 ,  H01L31/18 ,  H01L27/142 ,  H01L31/0224

CPC分类号： H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/046 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

摘要： A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.

公开(公告)号：EP4046204A1

公开(公告)日：2022-08-24

申请号：EP20808561.3

申请日：2020-10-23

申请人： First Solar, Inc.

发明人： DIRUBIO, Christopher ,  GLOECKLER, Markus ,  LI, Weixin ,  MALIK, Richard, Jr. ,  MAXWELL, Riley ,  SHARRER, Jason ,  TRIVEDI, Jigish

IPC分类号： H01L31/02 ,  H01L31/048

公开(公告)号：EP3216060A1

公开(公告)日：2017-09-13

申请号：EP15706121.9

申请日：2015-02-11

申请人： First Solar, Inc

发明人： DAMJANOVIC, Dan ,  GLOECKLER, Markus ,  LIAO, Feng ,  LOS, Andrei ,  MAO, Dan ,  MILLIRON, Benjamin ,  MOR, Gopal ,  POWELL, Rick ,  RING, Kenneth ,  ROGGELIN, Aaron ,  TRIVEDI, Jigish ,  ZHAO, Zhibo

IPC分类号： H01L31/0296

CPC分类号： H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

摘要翻译： 光伏器件包括衬底结构和至少一个诸如CdSeTe层的含Se层。 用于制造光伏器件的工艺包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和气相传输沉积工艺中的至少一种在衬底上形成CdSeTe层。 该工艺还可以包括控制含Se层的厚度范围。

公开(公告)号：EP2954562A2

公开(公告)日：2015-12-16

申请号：EP14705003.3

申请日：2014-02-03

申请人： First Solar, Inc

发明人： TRIVEDI, Jigish ,  POWELL, Rick ,  DAMJANOVIC, Dan ,  GUO, Jing ,  ZHAO, Zhibo ,  LIAO, Feng ,  KARPENKO, Oleh ,  JAYARAMAN, Sreenivas ,  LIM, Chong

IPC分类号： H01L31/073 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/065 ,  H01L31/02167 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/543 ,  Y02P70/521

摘要： A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

公开(公告)号：EP2807680A2

公开(公告)日：2014-12-03

申请号：EP13702563.1

申请日：2013-01-23

申请人： First Solar, Inc

发明人： GLOECKLER, Markus ,  KHAN, Imran ,  TRIVEDI, Jigish ,  TRUMAN, Thomas

IPC分类号： H01L31/18 ,  G01R31/26

CPC分类号： H01L31/1864 ,  H01L31/048 ,  H02S50/10 ,  Y02E10/50 ,  Y02P70/521

摘要： A apparatus and method for manufacturing a photovoltaic module includes components for heating the module and applying an electrical bias to the module to improve photovoltaic module performance and manufacture multiple photovoltaic modules with similar performance.

摘要翻译： 用于制造光伏模块的装置和方法包括用于加热模块并向模块施加电偏压以提高光伏模块性能并且制造具有相似性能的多个光伏模块的组件。