公开(公告)号：EP2087503A1

公开(公告)日：2009-08-12

申请号：EP07819513.8

申请日：2007-10-31

申请人： Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung e.V.

发明人： HEINSS, Jens-Peter ,  KIRCHHOFF, Volker ,  KLOSE, Lars ,  METZNER, Christoph ,  MORGNER, Henry ,  SCHEFFEL, Bert

IPC分类号： H01J37/32

CPC分类号： C23F4/00 ,  H01J37/32055 ,  H01J37/32596 ,  H01J37/32706

摘要： The invention relates to a device for the pre-treatment of at least one substrate (21), comprising a low voltage arc discharge source (24; 25) disposed in a vacuum chamber (22) for generating a plasma (26), from which charge carriers can be extracted, which can be applied to the surface of the substrate (21), wherein the substrate (21) is connected to the electric vacuum chamber mass (28), and a BIAS voltage is switched to accelerate the charge carriers on the substrate surface between the substrate (21) and the vacuum chamber mass (28), on one hand, and an electrode (25) close to a plasma potential in terms of voltage is switched, on the other hand.

公开(公告)号：EP2795657A1

公开(公告)日：2014-10-29

申请号：EP12775662.5

申请日：2012-10-17

申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： MORGNER, Henry ,  MATTAUSCH, Gösta ,  METZNER, Christoph ,  JUNGHÄHNEL, Michael ,  LABITZKE, Rainer ,  KLOSE, Lars ,  WERNER, Lars ,  KUBUSCH, Jörg

IPC分类号： H01J37/32

CPC分类号： H01J37/32568 ,  H01J37/32055 ,  H01J37/32064 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32807 ,  H01J2237/0822 ,  H01J2237/152 ,  H01J2237/327 ,  H05H1/48

摘要： The invention relates to a device for generating a hollow cathode arc discharge plasma, consisting of two plasma sources (11; 12), each comprising a hollow cathode (13; 14) and an electrode (15; 16) that is associated with the hollow cathode (13; 14) and has an opening extending through the electrode (15; 16), wherein the hollow cathodes (13; 14) of the two plasma sources (11; 12) are connected to a pulse generator (17) that generates a bipolar, medium frequency pulsed voltage between the two hollow cathodes (13; 14). In both plasma sources (11; 12), the hollow cathode (13; 14) is connected in an electrically conductive manner to the associated electrode (15; 16), either directly or with the intercalation of at least one component (38; 39) that delimits the current direction.

公开(公告)号：EP2087503B1

公开(公告)日：2013-12-11

申请号：EP07819513.8

申请日：2007-10-31

申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： HEINSS, Jens-Peter ,  KIRCHHOFF, Volker ,  KLOSE, Lars ,  METZNER, Christoph ,  MORGNER, Henry ,  SCHEFFEL, Bert

IPC分类号： H01J37/32 ,  C23F4/00

CPC分类号： C23F4/00 ,  H01J37/32055 ,  H01J37/32596 ,  H01J37/32706

公开(公告)号：EP0870070B1

公开(公告)日：2000-05-31

申请号：EP96946089.8

申请日：1996-12-13

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： NEUMANN, Manfred ,  SCHILLER, Siegfried ,  MORGNER, Henry ,  SCHILLER, Nicolas ,  STRAACH, Steffen

IPC分类号： C23C14/06 ,  C23C14/00 ,  B65G11/00

CPC分类号： C23C14/08 ,  C23C14/0021 ,  C23C14/32 ,  Y10T428/31663

摘要： According to the invention, in plasma-activated high-rate evaporation of an oxide former, monomers are applied in addition to oxygen in such a way that the evaporated oxide formers and the oxygen and the monomers have a preferential direction on the substrate and pass through a high-density plasma zone. More than 50 wt % of the coating on the substrate consists of inorganic molecules and under 50 wt % of partially cross-linked organic molecules. The process is used for packaging, window glazing, mirrors, decorative surfaces or façade linings.

公开(公告)号：EP0870070A2

公开(公告)日：1998-10-14

申请号：EP96946089.0

申请日：1996-12-13

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： NEUMANN, Manfred ,  SCHILLER, Siegfried ,  MORGNER, Henry ,  SCHILLER, Nicolas ,  STRAACH, Steffen

IPC分类号： C23C14

CPC分类号： C23C14/08 ,  C23C14/0021 ,  C23C14/32 ,  Y10T428/31663

摘要： According to the invention, in plasma-activated high-rate evaporation of an oxide former, monomers are applied in addition to oxygen in such a way that the evaporated oxide formers and the oxygen and the monomers have a preferential direction on the substrate and pass through a high-density plasma zone. More than 50 wt % of the coating on the substrate consists of inorganic molecules and under 50 wt % of partially cross-linked organic molecules. The process is used for packaging, window glazing, mirrors, decorative surfaces or façade linings.

公开(公告)号：EP0755461A1

公开(公告)日：1997-01-29

申请号：EP95915754.0

申请日：1995-04-07

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： NEUMANN, Manfred ,  GOEDICKE, Klaus ,  SCHILLER, Siegfried ,  RESCHKE, Jonathan ,  MORGNER, Henry ,  MILDE, Falk ,  FIETZKE, Fred

IPC分类号： H05H1 ,  C23C14 ,  H01J37

CPC分类号： H01J37/32422 ,  C23C14/32 ,  C23C14/562 ,  H01J37/32706

摘要： The process and appropriate device is designed to facilitate the coating at a high rate of large-area electrically conductive and electrically insulating substrates with electrically insulating and electrically conductive coatings comparatively economically. The substrates are primarily strip-like and are especially plastic foils more than a metre wide. According to the invention, negative and positive voltage pulses are alternately applied in a prior art vacuum coating device to the electrically conductive substrate or, in the case of electrically insulating substrates, to an electrode arranged behind it, e.g. the cooling roller, relative to the plasma or to an electrode at approximately plasma potential. The shape, voltage and duration of the pulses is suitable for the coating purpose and the material. The process is particularly suitable for applying wear and corrosion protection and barrier coatings for use, for example, in the packaging industry.

公开(公告)号：EP0581774B1

公开(公告)日：1994-11-02

申请号：EP92904217.4

申请日：1992-02-04

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： SCHILLER, Siegfried ,  NEUMANN, Manfred ,  ZEISSIG, Gerhard ,  MORGNER, Henry

IPC分类号： C23C14/30 ,  C23C14/10 ,  C23C14/54

CPC分类号： C23C14/30 ,  C23C14/10

摘要： The invention relates to a process and device for depositing SiOx coatings on a substrate by the evaporation of SiO2 using an electron beam linear evaporator with a magnetic trap by guiding the electron beam along a deflection line parallel to the longitudinal axis of the magnetic trap to the material to be evaporated and deflecting it discretely along the deflection line in such a way that a series of evaporation points (5) with a high power density is formed, whereby the magnetic field between the material to be evaporated and the substrate to be coated reaches 50 to 100 G and the product of the distance and the average magnetic flux density between the material to be evaporated and the substrate is at least 15 G x m.

公开(公告)号：EP2401232A1

公开(公告)日：2012-01-04

申请号：EP10746778.9

申请日：2010-02-24

申请人： University Of Virginia Patent Foundation ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： WADLEY, Haydn N. G. ,  MATTAUSCH, Goesta ,  MORGNER, Henry ,  ROEGNER, Frank-Holm

IPC分类号： C01B33/12 ,  C23C16/513 ,  H05H1/24

CPC分类号： H01J37/32596 ,  C23C14/228 ,  C23C14/246 ,  C23C14/30 ,  C23C14/32 ,  H01J37/3053 ,  H01J37/32055 ,  H01J37/3233 ,  H01J37/32339 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/34 ,  H01J2237/332

摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

公开(公告)号：EP0755461B1

公开(公告)日：1997-11-05

申请号：EP95915754.6

申请日：1995-04-07

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： NEUMANN, Manfred ,  GOEDICKE, Klaus ,  SCHILLER, Siegfried ,  RESCHKE, Jonathan ,  MORGNER, Henry ,  MILDE, Falk ,  FIETZKE, Fred

IPC分类号： C23C14/32 ,  H01J37/32

CPC分类号： H01J37/32422 ,  C23C14/32 ,  C23C14/562 ,  H01J37/32706

摘要： The process and appropriate device is designed to facilitate the coating at a high rate of large-area electrically conductive and electrically insulating substrates with electrically insulating and electrically conductive coatings comparatively economically. The substrates are primarily strip-like and are especially plastic foils more than a metre wide. According to the invention, negative and positive voltage pulses are alternately applied in a prior art vacuum coating device to the electrically conductive substrate or, in the case of electrically insulating substrates, to an electrode arranged behind it, e.g. the cooling roller, relative to the plasma or to an electrode at approximately plasma potential. The shape, voltage and duration of the pulses is suitable for the coating purpose and the material. The process is particularly suitable for applying wear and corrosion protection and barrier coatings for use, for example, in the packaging industry.

公开(公告)号：EP0581774A1

公开(公告)日：1994-02-09

申请号：EP92904217.0

申请日：1992-02-04

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： SCHILLER, Siegfried ,  NEUMANN, Manfred ,  ZEISSIG, Gerhard ,  MORGNER, Henry

IPC分类号： C23C14

CPC分类号： C23C14/30 ,  C23C14/10

摘要： L'invention concerne un procédé et une installation pour le dépôt de couches de SiOx sur un substrat par évaporation de SiO2 avec utilisation d'un évaporateur linéaire à faisceau d'électrons à piège magnétique, consistant en ce que le faisceau d'électrons est guidé vers le produit à évaporer le long d'une ligne de déflexion parallèle à l'axe longitudinal du piège magnétique et défléchi de manière discontinue le long de la ligne de déflexion, de telle manière qu'il se forme une série de points d'évaporation (5) à densité de puissance élevée, le champ magnétique entre le produit à évaporer et le substrat à revêtir atteignant une valeur maximum de densité de flux magnétique de 50 à 100 G et le produit de l'écart et de la densité de flux magnétique moyenne entre le produit à évaporer et le substrat représentant au moins 15 G x m.