公开(公告)号：EP2380197A1

公开(公告)日：2011-10-26

申请号：EP09807470.1

申请日：2009-12-10

申请人： Freescale Semiconductor, Inc.

发明人： BOULAY, Jean Marie ,  GHANNAM, Ayad

IPC分类号： H01L23/498 ,  H01L23/538 ,  H01L23/64

CPC分类号： H01L23/5389 ,  H01L23/49844 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/49052 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19051 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099

摘要： A high power semiconductor device for operation at powers greater than 5 watts for wireless applications comprises a semiconductor substrate including an active area of the high power semiconductor device, contact regions formed on the semiconductor substrate providing contacts to the active area of the high power semiconductor device, a dielectric layer formed over a part of the semiconductor substrate, a lead for providing an external connection to the high power semiconductor device and an impedance matching network formed on the semiconductor substrate between the active area of the high power semiconductor device and the lead. The impedance matching network includes conductor lines formed on the dielectric layer. The conductor lines are coupled to the contact regions for providing high power connections to the contact regions of the active area, and have a predetermined inductance for impedance matching.

摘要翻译： 在无线应用功率大于5瓦的用于外科手术的高功率半导体器件包括：半导体衬底包括在高功率半导体器件的有源区，形成在提供接触到高功率半导体器件的有源区中的半导体衬底的接触区域 中，形成在半导体衬底，引线的一部分，用于向高功率半导体器件的外部连接的提供和阻抗匹配网络形成在高功率半导体器件和引线的有源区之间的半导体衬底的介电层。 阻抗匹配网络包括形成在电介质层上的导体线。 导体线耦合到接触区域用于向所述有源区的接触区域提供高电源连接，并且具有用于阻抗匹配的预定电感。