公开(公告)号：EP1871928B1

公开(公告)日：2013-10-30

申请号：EP06753501.3

申请日：2006-05-05

申请人： Freiberger Compound Materials GmbH ,  OSRAM Opto Semiconductors GmbH

发明人： SCHOLZ, Ferdinand ,  BRÜCKNER, Peter ,  HABEL, Frank ,  PETER, Matthias ,  KÖHLER, Klaus

IPC分类号： C30B29/40 ,  H01L21/205 ,  H01L21/02 ,  C30B25/02

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S117/915 ,  Y10T428/24355

公开(公告)号：EP2024991B1

公开(公告)日：2012-10-17

申请号：EP06776716.0

申请日：2006-08-09

申请人： Freiberger Compound Materials GmbH

发明人： SCHOLZ, Ferdinand ,  BRÜCKNER, Peter ,  HABEL, Frank ,  LEIBIGER, Gunnar

IPC分类号： H01L21/205 ,  C30B25/14 ,  C30B29/40 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/14 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02664 ,  H01L31/1844

公开(公告)号：EP2024991A1

公开(公告)日：2009-02-18

申请号：EP06776716.0

申请日：2006-08-09

申请人： Freiberger Compound Materials GmbH

发明人： SCHOLZ, Ferdinand ,  BRÜCKNER, Peter ,  HABEL, Frank ,  LEIBIGER, Gunnar

IPC分类号： H01L21/205 ,  C30B25/14 ,  C30B29/40

CPC分类号： C30B29/403 ,  C30B25/14 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02664 ,  H01L31/1844

摘要： The invention describes methods for producing a doped III-N solid crystal, where III denotes at least one element of main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N solid crystal is deposited on a substrate or template in a reactor, and wherein at least one dopant is fed into the reactor in a mixture with at least one group III material. In this way, it is possible to obtain III-N solid crystals and III-N single-crystal substrates singulated therefrom, each having a highly homogeneous distribution of the dopant in the growth direction and also in the growth plane perpendicular thereto. It is correspondingly possible to provide a highly homogeneous distribution of charge carriers and/or of electrical resistivity in the growth direction and also in the growth plane perpendicular thereto. Furthermore, it is possible to obtain a very good crystal quality.

公开(公告)号：EP2815421B1

公开(公告)日：2018-01-31

申请号：EP13712741.1

申请日：2013-03-21

申请人： Freiberger Compound Materials GmbH

发明人： LIPSKI, Frank ,  SCHOLZ, Ferdinand ,  KLEIN, Martin ,  HABEL, Frank

IPC分类号： C30B29/40 ,  H01L21/02 ,  C30B25/10 ,  C30B25/16 ,  C30B25/18

CPC分类号： C30B25/16 ,  C30B25/04 ,  C30B25/10 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  Y10T428/24851

公开(公告)号：EP2414567B1

公开(公告)日：2013-11-20

申请号：EP11709883.0

申请日：2011-03-18

申请人： Freiberger Compound Materials GmbH

发明人： WUNDERER, Thomas ,  SCHWAIGER, Stephan ,  SCHWAIGER, Ilona ,  RÖSCH, Rudolph ,  LIPSKI, Frank ,  SCHOLZ, Ferdinand

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B25/02 ,  C30B25/04 ,  C30B25/18

CPC分类号： C30B23/025 ,  C30B23/04 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403

摘要： A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.

公开(公告)号：EP2815421A1

公开(公告)日：2014-12-24

申请号：EP13712741.1

申请日：2013-03-21

申请人： Freiberger Compound Materials GmbH

发明人： LIPSKI, Frank ,  SCHOLZ, Ferdinand ,  KLEIN, Martin ,  HABEL, Frank

IPC分类号： H01L21/02

CPC分类号： C30B25/16 ,  C30B25/04 ,  C30B25/10 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  Y10T428/24851

摘要： The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crytal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

公开(公告)号：EP2414567A1

公开(公告)日：2012-02-08

申请号：EP11709883.0

申请日：2011-03-18

申请人： Freiberger Compound Materials GmbH

发明人： WUNDERER, Thomas ,  SCHWAIGER, Stephan ,  ARGUT, Ilona ,  RÖSCH, Rudolph ,  LIPSKI, Frank ,  SCHOLZ, Ferdinand

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B25/02 ,  C30B25/04 ,  C30B25/18

CPC分类号： C30B23/025 ,  C30B23/04 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403

摘要： A method for producing a semipolar semiconductor crystal comprising a group III nitride (III-N) comprises the following steps: preparing a starting substrate (2) comprising sapphire (Al
2 O
3 ) and having a first surface (3), which is formed by a crystal plane of the family {11-23}; and epitaxially growing (17, 19) a semipolar crystal layer (18) comprising a group III nitride (III-N) on the starting substrate above the first surface (3) to form a second surface (22), which is formed by a crystal plane of the family {10‑11} in the group III nitride. GaN, in particular, is appropriate as the group III nitride. The following combinations of initial substrate (sapphire) and grown crystal (e.g. GaN) are proposed, in particular: {20-21}-GaN on {22-43}-sapphire, {10-12}-GaN on {11-26}-sapphire. The crystal orientation of GaN produced in the present case can be generalized to families of the form {20‑2/}, where / is equal to a natural number 1, 2, 3, 4, etc. However, {11-21}-GaN on {10-11}-sapphire, too, is also encompassed here by the proposal.

公开(公告)号：EP1871928A1

公开(公告)日：2008-01-02

申请号：EP06753501.3

申请日：2006-05-05

申请人： Forschungsverbund Berlin e.V. ,  Osram Opto Semiconductors GmbH ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： SCHOLZ, Ferdinand ,  BRÜCKNER, Peter ,  HABEL, Frank ,  PETER, Matthias ,  KÖHLER, Klaus

IPC分类号： C30B29/40 ,  H01L21/205 ,  C30B25/02

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S117/915 ,  Y10T428/24355

摘要： An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.