摘要:
A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation:
wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要:
A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation:
wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要:
A positive photosensitive composition includes: a resin (A) whose dissolution rate in an alkaline developing solution increases by the action of an acid, the resin (A) containing an acid decomposable repeating unit represented by a general formula (I) and an acid nondecomposable repeating unit represented by a general formula (II); and a compound (B) capable of generating an acid upon irradiation with one of active rays and radiations:
wherein Xa 1 represents one of a hydrogen atom, an alkyl group, a cyano group, and a halogen atom, A 1 represents one of a single bond and a divalent connecting group, ALG represents an acid leaving hydrocarbon group, Xa 2 represents one of a hydrogen atom, an alkyl group, a cyano group, and a halogen atom, A 2 represents one of a single bond and a divalent connecting group, and ACG represents an acid nonleaving hydrocarbon group.
摘要:
A positive resist composition for immersion exposure comprises: (A) a resin capable of increasing its solubility in an alkali developer by an action of an acid, and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, wherein the acid satisfies conditions of V ≧ 230 and V/S ≦ 0.93 taking van der Waals volume of the acid as V (Å 3 ), and van der Waals surface area of the acid as S (Å 2 ).
摘要:
A positive photosensitive composition comprising: a resin which comprises a repeating unit having a diamantane structure and decomposes under an action of an acid to increase a solubility in an alkali developer; a compound capable of generating an acid upon irradiation with actinic rays or radiation; a compound represented by the following formula (1); and a solvent:
wherein R 1 represents a hydrogen atom or an alkyl group, m represents an integer of from 1 to 30, n represents an integer of from 0 to 3, and p represents an integer of from 0 to 5.
摘要:
Provided is a method for producing a curable composition for imprints which excellent in patternability. Applied is a method for producing a curable composition for imprints, which comprises passing a curable composition comprising a polymerizable monomer (A) and a polymerizable initiator (B) through a filter having an effective filter area of 200cm 2 or more at least one time.
摘要:
A photosensitive composition comprises (A) a sulfonium or iodonium salt having an anion represented by one of formulae (I) and (II):
wherein Y represents an alkylene group substituted with at least one fluorine atom, and R represents an alkyl group or a cycloalkyl group. the photosensitive composition further comprising: (D) a resin soluble in an alkali developer; and (E) an acid crosslinking agent that crosslinks with the resin (D).