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1.发明公开INTRODUCTION OF METAL IMPURITY TO CHANGE WORKFUNCTION OF CONDUCTIVE ELECTRODES 审中-公开引言金属杂质修订工作职能引出电极
公开(公告)号：EP1974372A4
公开(公告)日：2009-12-09
申请号：EP07716303
申请日：2007-01-03
Applicant: IBM
Inventor： CHUDZIK MICHAEL P , DORIS BRUCE B , GUHA SUPRATIK , JAMMY RAJARAO , NARAYANAN VIJAY , PARUCHURI VAMSI K , WANG YUN Y , KWONG HON WONG KEITH
IPC: H01L21/336 , H01L21/28 , H01L29/49 , H01L29/51
CPC classification number: H01L29/517 , H01L21/28088 , H01L21/823828 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/78 , H01L2924/0002 , H01L2924/00
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2.发明公开SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH K DIELECTRICS 有权层层壁垒的选择性实施旨在实现阈值电压控制在CMOS元件具有高K电介质的生产
公开(公告)号：EP1766691A4
公开(公告)日：2011-06-29
申请号：EP05732384
申请日：2005-03-30
Applicant: IBM
Inventor： BOJARCZUK NESTOR A JR , CABRAL CYRIL JR , CARTIER EDUARD A , COPEL MATTHEW W , FRANK MARTIN M , GOUSEV EVGENI P , GUHA SUPRATIK , JAMMY RAJARAO , NARAYANAN VIJAY , PARUCHURI VAMSI K
IPC: H01L31/113 , H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/51 , H01L31/119
CPC classification number: H01L29/513 , H01L21/28079 , H01L21/28088 , H01L21/823857 , H01L29/495 , H01L29/4966 , H01L29/517
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公开(公告)号：EP1839468A4
公开(公告)日：2011-06-08
申请号：EP05810237
申请日：2005-10-19
Applicant: IBM
Inventor： GELORME JEFFREY D , GUHA SUPRATIK , LABIANCA NANCY C , MARTIN YVES , VAN KESSEL THEODORE G
IPC: H05K7/20
CPC classification number: H01L23/3733 , H01L23/4093 , H01L23/42 , H01L2924/0002 , H01L2924/00
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4.发明公开NITROGEN-CONTAINING FIELD EFFECT TRANSISTOR GATE STACK CONTAINING A THRESHOLD VOLTAGE CONTROL LAYER FORMED VIA DEPOSITION OF A METAL OXIDE 审中-公开WITH A形成的金属氧化物阈值电压控制层的矿床氮场效应晶体管栅极堆栈
公开(公告)号：EP1825521A4
公开(公告)日：2008-10-01
申请号：EP05820881
申请日：2005-11-01
Applicant: IBM
Inventor： BOJARCZUK NESTOR A JR , CABRAL CYRIL JR , CARTIER EDUARD A , FRANK MARTIN M , GOUSEV EVGENI P , GUHA SUPRATIK , JAMISON PAUL C , JAMMY RAJARAO , NARAYANAN VIJAY , PARUCHURI VAMSI K
IPC: H01L29/792 , H01L21/336 , H01L29/76 , H01L29/94 , H01L31/00
CPC classification number: H01L29/513 , H01L21/28194 , H01L21/2822 , H01L21/823828 , H01L21/823857 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/517 , H01L29/518
Abstract: A semiconductor structure is provided that includes a V t stabilization layer between a gate dielectric and a gate electrode. The V t stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the provision that when the V t stabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure.
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