摘要:
A chip carrier (10) for wire bond-type chips is disclosed. This chip carrier employs organic dielectric materials, rather than ceramic materials, as is conventional. This chip carrier also employs at least one organic, photoimageable dielectric layer (110), having plated photo-vias (120), to electrically interconnect two (or more) layers (80, 130) of fan-out circuitry. This chip carrier further employs a single-tiered cavity (140) to contain a chip (150), rather than a multi-tiered cavity,as is conventional. Moreover, this chip carrier includes thermal via holes (170) and/or a metallic layer (230), directly beneath the chip (150), to enhance heat dissipation.
摘要:
A chip carrier (10) for wire bond-type chips is disclosed. This chip carrier employs organic dielectric materials, rather than ceramic materials, as is conventional. This chip carrier also employs at least one organic, photoimageable dielectric layer (110), having plated photo-vias (120), to electrically interconnect two (or more) layers (80, 130) of fan-out circuitry. This chip carrier further employs a single-tiered cavity (140) to contain a chip (150), rather than a multi-tiered cavity,as is conventional. Moreover, this chip carrier includes thermal via holes (170) and/or a metallic layer (230), directly beneath the chip (150), to enhance heat dissipation.